Semiconductor Lasers:
Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ~m. The development during the 1970s of GaAs semiconductor lasers, emittin...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1993
|
| Ausgabe: | Second Edition |
| Schlagworte: | |
| Online-Zugang: | BTU01 Volltext |
| Zusammenfassung: | Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ~m. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8-0. 9 ~m, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage oflow losses in silica fibers occurring around 1. 3 and 1. 55 ~m, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths |
| Beschreibung: | 1 Online-Ressource (616 p) |
| ISBN: | 9781461304814 |
| DOI: | 10.1007/978-1-4613-0481-4 |
Internformat
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| 520 | |a Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ~m. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8-0. 9 ~m, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage oflow losses in silica fibers occurring around 1. 3 and 1. 55 ~m, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths | ||
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Datensatz im Suchindex
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| dewey-full | 621.3 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
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| dewey-sort | 3621.3 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-1-4613-0481-4 |
| edition | Second Edition |
| format | Electronic eBook |
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| institution | BVB |
| isbn | 9781461304814 |
| language | English |
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| spelling | Agrawal, Govind P. Verfasser aut Semiconductor Lasers by Govind P. Agrawal, Niloy K. Dutta Second Edition Boston, MA Springer US 1993 1 Online-Ressource (616 p) txt rdacontent c rdamedia cr rdacarrier Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ~m. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8-0. 9 ~m, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage oflow losses in silica fibers occurring around 1. 3 and 1. 55 ~m, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths Engineering Electrical Engineering Electrical engineering Halbleiterlaser (DE-588)4139556-6 gnd rswk-swf Halbleiterlaser (DE-588)4139556-6 s 1\p DE-604 Dutta, Niloy K. aut Erscheint auch als Druck-Ausgabe 9781461275794 https://doi.org/10.1007/978-1-4613-0481-4 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Agrawal, Govind P. Dutta, Niloy K. Semiconductor Lasers Engineering Electrical Engineering Electrical engineering Halbleiterlaser (DE-588)4139556-6 gnd |
| subject_GND | (DE-588)4139556-6 |
| title | Semiconductor Lasers |
| title_auth | Semiconductor Lasers |
| title_exact_search | Semiconductor Lasers |
| title_full | Semiconductor Lasers by Govind P. Agrawal, Niloy K. Dutta |
| title_fullStr | Semiconductor Lasers by Govind P. Agrawal, Niloy K. Dutta |
| title_full_unstemmed | Semiconductor Lasers by Govind P. Agrawal, Niloy K. Dutta |
| title_short | Semiconductor Lasers |
| title_sort | semiconductor lasers |
| topic | Engineering Electrical Engineering Electrical engineering Halbleiterlaser (DE-588)4139556-6 gnd |
| topic_facet | Engineering Electrical Engineering Electrical engineering Halbleiterlaser |
| url | https://doi.org/10.1007/978-1-4613-0481-4 |
| work_keys_str_mv | AT agrawalgovindp semiconductorlasers AT duttaniloyk semiconductorlasers |