Atomistic Aspects of Epitaxial Growth:
Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The cont...
Gespeichert in:
| Weitere Verfasser: | , , , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Dordrecht
Springer Netherlands
2002
|
| Schriftenreihe: | NATO Science Series, Series II: Mathematics, Physics and Chemistry
65 |
| Schlagworte: | |
| Online-Zugang: | UBT01 URL des Erstveröffentlichers |
| Zusammenfassung: | Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The contributions to Atomistic Aspects of Epitaxial Growth are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field |
| Beschreibung: | 1 Online-Ressource (XII, 604 p) |
| ISBN: | 9789401003919 |
| DOI: | 10.1007/978-94-010-0391-9 |
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| 520 | |a Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The contributions to Atomistic Aspects of Epitaxial Growth are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field | ||
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| spelling | Atomistic Aspects of Epitaxial Growth edited by Miroslav Kotrla, Nicolas I. Papanicolaou, Dimitri D. Vvedensky, Luc T. Wille Proceedings of the NATO Advanced Research Workshop, held in Dasia, Corfu, Greece, June 25-30, 2001 Dordrecht Springer Netherlands 2002 1 Online-Ressource (XII, 604 p) txt rdacontent c rdamedia cr rdacarrier NATO Science Series, Series II: Mathematics, Physics and Chemistry 65 Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The contributions to Atomistic Aspects of Epitaxial Growth are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field Physics Physics, general Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Characterization and Evaluation of Materials Physical Chemistry Condensed Matter Physics Physical chemistry Condensed matter Electronics Microelectronics Materials science Materials / Surfaces Thin films Epitaxieschicht (DE-588)4152546-2 gnd rswk-swf Kristallwachstum (DE-588)4123579-4 gnd rswk-swf 1\p (DE-588)1071861417 Konferenzschrift 2001 Dassia gnd-content Kristallwachstum (DE-588)4123579-4 s Epitaxieschicht (DE-588)4152546-2 s 2\p DE-604 Kotrla, Miroslav edt Papanicolaou, Nicolas I. edt Vvedensky, Dimitri D. edt Wille, Luc T. edt Erscheint auch als Druck-Ausgabe 9781402006753 https://doi.org/10.1007/978-94-010-0391-9 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Atomistic Aspects of Epitaxial Growth Physics Physics, general Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Characterization and Evaluation of Materials Physical Chemistry Condensed Matter Physics Physical chemistry Condensed matter Electronics Microelectronics Materials science Materials / Surfaces Thin films Epitaxieschicht (DE-588)4152546-2 gnd Kristallwachstum (DE-588)4123579-4 gnd |
| subject_GND | (DE-588)4152546-2 (DE-588)4123579-4 (DE-588)1071861417 |
| title | Atomistic Aspects of Epitaxial Growth |
| title_alt | Proceedings of the NATO Advanced Research Workshop, held in Dasia, Corfu, Greece, June 25-30, 2001 |
| title_auth | Atomistic Aspects of Epitaxial Growth |
| title_exact_search | Atomistic Aspects of Epitaxial Growth |
| title_full | Atomistic Aspects of Epitaxial Growth edited by Miroslav Kotrla, Nicolas I. Papanicolaou, Dimitri D. Vvedensky, Luc T. Wille |
| title_fullStr | Atomistic Aspects of Epitaxial Growth edited by Miroslav Kotrla, Nicolas I. Papanicolaou, Dimitri D. Vvedensky, Luc T. Wille |
| title_full_unstemmed | Atomistic Aspects of Epitaxial Growth edited by Miroslav Kotrla, Nicolas I. Papanicolaou, Dimitri D. Vvedensky, Luc T. Wille |
| title_short | Atomistic Aspects of Epitaxial Growth |
| title_sort | atomistic aspects of epitaxial growth |
| topic | Physics Physics, general Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Characterization and Evaluation of Materials Physical Chemistry Condensed Matter Physics Physical chemistry Condensed matter Electronics Microelectronics Materials science Materials / Surfaces Thin films Epitaxieschicht (DE-588)4152546-2 gnd Kristallwachstum (DE-588)4123579-4 gnd |
| topic_facet | Physics Physics, general Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Characterization and Evaluation of Materials Physical Chemistry Condensed Matter Physics Physical chemistry Condensed matter Electronics Microelectronics Materials science Materials / Surfaces Thin films Epitaxieschicht Kristallwachstum Konferenzschrift 2001 Dassia |
| url | https://doi.org/10.1007/978-94-010-0391-9 |
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