Towards the First Silicon Laser:
Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds fo...
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| Other Authors: | , , |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Dordrecht
Springer Netherlands
2003
|
| Series: | NATO Science Series, Series II: Mathematics, Physics and Chemistry
93 |
| Subjects: | |
| Online Access: | UBT01 Volltext |
| Summary: | Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book |
| Physical Description: | 1 Online-Ressource (XIV, 482 p) |
| ISBN: | 9789401001496 |
| DOI: | 10.1007/978-94-010-0149-6 |
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| 520 | |a Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book | ||
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| id | DE-604.BV045152224 |
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| indexdate | 2024-07-10T08:10:07Z |
| institution | BVB |
| isbn | 9789401001496 |
| language | English |
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| series2 | NATO Science Series, Series II: Mathematics, Physics and Chemistry |
| spelling | Towards the First Silicon Laser edited by Lorenzo Pavesi, Sergey Gaponenko, Luca Dal Negro Proceedings of the NATO Advanced Research Workshop, held in Trento, Italy, 21-26 September 2002 Dordrecht Springer Netherlands 2003 1 Online-Ressource (XIV, 482 p) txt rdacontent c rdamedia cr rdacarrier NATO Science Series, Series II: Mathematics, Physics and Chemistry 93 Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book Physics Optics and Electrodynamics Optics, Optoelectronics, Plasmonics and Optical Devices Electrical Engineering Characterization and Evaluation of Materials Optical and Electronic Materials Optics Electrodynamics Optoelectronics Plasmons (Physics) Electrical engineering Optical materials Electronic materials Materials science Pavesi, Lorenzo edt Gaponenko, Sergey edt Negro, Luca Dal edt Erscheint auch als Druck-Ausgabe 9781402011948 https://doi.org/10.1007/978-94-010-0149-6 Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Towards the First Silicon Laser Physics Optics and Electrodynamics Optics, Optoelectronics, Plasmonics and Optical Devices Electrical Engineering Characterization and Evaluation of Materials Optical and Electronic Materials Optics Electrodynamics Optoelectronics Plasmons (Physics) Electrical engineering Optical materials Electronic materials Materials science |
| title | Towards the First Silicon Laser |
| title_alt | Proceedings of the NATO Advanced Research Workshop, held in Trento, Italy, 21-26 September 2002 |
| title_auth | Towards the First Silicon Laser |
| title_exact_search | Towards the First Silicon Laser |
| title_full | Towards the First Silicon Laser edited by Lorenzo Pavesi, Sergey Gaponenko, Luca Dal Negro |
| title_fullStr | Towards the First Silicon Laser edited by Lorenzo Pavesi, Sergey Gaponenko, Luca Dal Negro |
| title_full_unstemmed | Towards the First Silicon Laser edited by Lorenzo Pavesi, Sergey Gaponenko, Luca Dal Negro |
| title_short | Towards the First Silicon Laser |
| title_sort | towards the first silicon laser |
| topic | Physics Optics and Electrodynamics Optics, Optoelectronics, Plasmonics and Optical Devices Electrical Engineering Characterization and Evaluation of Materials Optical and Electronic Materials Optics Electrodynamics Optoelectronics Plasmons (Physics) Electrical engineering Optical materials Electronic materials Materials science |
| topic_facet | Physics Optics and Electrodynamics Optics, Optoelectronics, Plasmonics and Optical Devices Electrical Engineering Characterization and Evaluation of Materials Optical and Electronic Materials Optics Electrodynamics Optoelectronics Plasmons (Physics) Electrical engineering Optical materials Electronic materials Materials science |
| url | https://doi.org/10.1007/978-94-010-0149-6 |
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