SiC Power Materials: Devices and Applications

In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research an...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Weitere Verfasser: Feng, Zhe Chuan (HerausgeberIn)
Format: Elektronisch E-Book
Sprache:English
Veröffentlicht: Berlin, Heidelberg Springer Berlin Heidelberg 2004
Schriftenreihe:Springer Series in Materials Science 73
Schlagworte:
Online-Zugang:UBT01
Volltext
Zusammenfassung:In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.
Beschreibung:1 Online-Ressource (XX, 452 p)
ISBN:9783662098776
DOI:10.1007/978-3-662-09877-6

Es ist kein Print-Exemplar vorhanden.

Fernleihe Bestellen Achtung: Nicht im THWS-Bestand! Volltext öffnen