Fundamental Aspects of Silicon Oxidation:
This book presents fundamental experimental and theoretical developments relating to silicon oxidation for ultra-thin gate oxide formation. Starting with elementary processes taking place during wet chemical cleans prior to oxidation, the focus is then placed on the incorporation of oxygen into the...
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Berlin, Heidelberg
Springer Berlin Heidelberg
2001
|
| Schriftenreihe: | Springer Series in Materials Science
46 |
| Schlagworte: | |
| Online-Zugang: | UBT01 Volltext |
| Zusammenfassung: | This book presents fundamental experimental and theoretical developments relating to silicon oxidation for ultra-thin gate oxide formation. Starting with elementary processes taking place during wet chemical cleans prior to oxidation, the focus is then placed on the incorporation of oxygen into the silicon crystal for H-passivated, clean and oxidized silicon surfaces, including oxygen diffusion and defect formation. Experimental methods include scanning tunneling microscopy, x-ray photoelectron and infrared absorption spectroscopies, ion scattering and transmission electron microscopy. Most of the theoretical contributions are based on first-principles calculations, ranging from cluster calculations to supercell and slab calculations. Phenomenological modeling of oxidation is also discussed. The material presented here will enable the reader to gain a deeper understanding of silicon oxidation and ultra-thin oxide formation (and the processes that affect the morphology of silicon oxides) |
| Beschreibung: | 1 Online-Ressource (XIII, 262 p) |
| ISBN: | 9783642567117 |
| DOI: | 10.1007/978-3-642-56711-7 |
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| 520 | |a This book presents fundamental experimental and theoretical developments relating to silicon oxidation for ultra-thin gate oxide formation. Starting with elementary processes taking place during wet chemical cleans prior to oxidation, the focus is then placed on the incorporation of oxygen into the silicon crystal for H-passivated, clean and oxidized silicon surfaces, including oxygen diffusion and defect formation. Experimental methods include scanning tunneling microscopy, x-ray photoelectron and infrared absorption spectroscopies, ion scattering and transmission electron microscopy. Most of the theoretical contributions are based on first-principles calculations, ranging from cluster calculations to supercell and slab calculations. Phenomenological modeling of oxidation is also discussed. The material presented here will enable the reader to gain a deeper understanding of silicon oxidation and ultra-thin oxide formation (and the processes that affect the morphology of silicon oxides) | ||
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| id | DE-604.BV045152064 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:10:07Z |
| institution | BVB |
| isbn | 9783642567117 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030541732 |
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| physical | 1 Online-Ressource (XIII, 262 p) |
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| publisher | Springer Berlin Heidelberg |
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| spelling | Fundamental Aspects of Silicon Oxidation edited by Yves J. Chabal Berlin, Heidelberg Springer Berlin Heidelberg 2001 1 Online-Ressource (XIII, 262 p) txt rdacontent c rdamedia cr rdacarrier Springer Series in Materials Science 46 This book presents fundamental experimental and theoretical developments relating to silicon oxidation for ultra-thin gate oxide formation. Starting with elementary processes taking place during wet chemical cleans prior to oxidation, the focus is then placed on the incorporation of oxygen into the silicon crystal for H-passivated, clean and oxidized silicon surfaces, including oxygen diffusion and defect formation. Experimental methods include scanning tunneling microscopy, x-ray photoelectron and infrared absorption spectroscopies, ion scattering and transmission electron microscopy. Most of the theoretical contributions are based on first-principles calculations, ranging from cluster calculations to supercell and slab calculations. Phenomenological modeling of oxidation is also discussed. The material presented here will enable the reader to gain a deeper understanding of silicon oxidation and ultra-thin oxide formation (and the processes that affect the morphology of silicon oxides) Materials Science Optical and Electronic Materials Surfaces and Interfaces, Thin Films Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Materials science Electronics Microelectronics Optical materials Electronic materials Materials / Surfaces Thin films Oxidation (DE-588)4137187-2 gnd rswk-swf Schichtwachstum (DE-588)4273432-0 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Siliciumdioxid (DE-588)4077447-8 gnd rswk-swf Kristallfläche (DE-588)4151344-7 gnd rswk-swf Silicium (DE-588)4077445-4 s Kristallfläche (DE-588)4151344-7 s Siliciumdioxid (DE-588)4077447-8 s Dünne Schicht (DE-588)4136925-7 s Schichtwachstum (DE-588)4273432-0 s 1\p DE-604 Oxidation (DE-588)4137187-2 s 2\p DE-604 Chabal, Yves J. edt Erscheint auch als Druck-Ausgabe 9783642625831 https://doi.org/10.1007/978-3-642-56711-7 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Fundamental Aspects of Silicon Oxidation Materials Science Optical and Electronic Materials Surfaces and Interfaces, Thin Films Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Materials science Electronics Microelectronics Optical materials Electronic materials Materials / Surfaces Thin films Oxidation (DE-588)4137187-2 gnd Schichtwachstum (DE-588)4273432-0 gnd Dünne Schicht (DE-588)4136925-7 gnd Silicium (DE-588)4077445-4 gnd Siliciumdioxid (DE-588)4077447-8 gnd Kristallfläche (DE-588)4151344-7 gnd |
| subject_GND | (DE-588)4137187-2 (DE-588)4273432-0 (DE-588)4136925-7 (DE-588)4077445-4 (DE-588)4077447-8 (DE-588)4151344-7 |
| title | Fundamental Aspects of Silicon Oxidation |
| title_auth | Fundamental Aspects of Silicon Oxidation |
| title_exact_search | Fundamental Aspects of Silicon Oxidation |
| title_full | Fundamental Aspects of Silicon Oxidation edited by Yves J. Chabal |
| title_fullStr | Fundamental Aspects of Silicon Oxidation edited by Yves J. Chabal |
| title_full_unstemmed | Fundamental Aspects of Silicon Oxidation edited by Yves J. Chabal |
| title_short | Fundamental Aspects of Silicon Oxidation |
| title_sort | fundamental aspects of silicon oxidation |
| topic | Materials Science Optical and Electronic Materials Surfaces and Interfaces, Thin Films Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Materials science Electronics Microelectronics Optical materials Electronic materials Materials / Surfaces Thin films Oxidation (DE-588)4137187-2 gnd Schichtwachstum (DE-588)4273432-0 gnd Dünne Schicht (DE-588)4136925-7 gnd Silicium (DE-588)4077445-4 gnd Siliciumdioxid (DE-588)4077447-8 gnd Kristallfläche (DE-588)4151344-7 gnd |
| topic_facet | Materials Science Optical and Electronic Materials Surfaces and Interfaces, Thin Films Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Materials science Electronics Microelectronics Optical materials Electronic materials Materials / Surfaces Thin films Oxidation Schichtwachstum Dünne Schicht Silicium Siliciumdioxid Kristallfläche |
| url | https://doi.org/10.1007/978-3-642-56711-7 |
| work_keys_str_mv | AT chabalyvesj fundamentalaspectsofsiliconoxidation |