Analysis and Simulation of Heterostructure Devices:
Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency d...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Vienna
Springer Vienna
2004
|
| Schriftenreihe: | Computational Microelectronics
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| Schlagworte: | |
| Online-Zugang: | FHI01 BTU01 Volltext |
| Zusammenfassung: | Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli cations. To cope with explosive development costs and the competition of today's semicon ductor industry, Technology Computer-Aided Design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented |
| Beschreibung: | 1 Online-Ressource (XX, 289 p) |
| ISBN: | 9783709105603 |
| DOI: | 10.1007/978-3-7091-0560-3 |
Internformat
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| 520 | |a Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli cations. To cope with explosive development costs and the competition of today's semicon ductor industry, Technology Computer-Aided Design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented | ||
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Datensatz im Suchindex
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| author | Palankovski, Vassil Quay, Rüdiger |
| author_facet | Palankovski, Vassil Quay, Rüdiger |
| author_role | aut aut |
| author_sort | Palankovski, Vassil |
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| building | Verbundindex |
| bvnumber | BV045149472 |
| collection | ZDB-2-ENG |
| ctrlnum | (ZDB-2-ENG)978-3-7091-0560-3 (OCoLC)1184261847 (DE-599)BVBBV045149472 |
| dewey-full | 621.381 |
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-3-7091-0560-3 |
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| id | DE-604.BV045149472 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:10:03Z |
| institution | BVB |
| isbn | 9783709105603 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030539170 |
| oclc_num | 1184261847 |
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| physical | 1 Online-Ressource (XX, 289 p) |
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| publishDate | 2004 |
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| publisher | Springer Vienna |
| record_format | marc |
| series2 | Computational Microelectronics |
| spelling | Palankovski, Vassil Verfasser aut Analysis and Simulation of Heterostructure Devices by Vassil Palankovski, Rüdiger Quay Vienna Springer Vienna 2004 1 Online-Ressource (XX, 289 p) txt rdacontent c rdamedia cr rdacarrier Computational Microelectronics Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli cations. To cope with explosive development costs and the competition of today's semicon ductor industry, Technology Computer-Aided Design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented Engineering Electronics and Microelectronics, Instrumentation Optical and Electronic Materials Surfaces and Interfaces, Thin Films Microwaves, RF and Optical Engineering Simulation and Modeling Computer simulation Microwaves Optical engineering Electronics Microelectronics Optical materials Electronic materials Materials / Surfaces Thin films Heterostruktur-Bauelement (DE-588)4236378-0 gnd rswk-swf Heterostruktur-Bauelement (DE-588)4236378-0 s 1\p DE-604 Quay, Rüdiger aut Erscheint auch als Druck-Ausgabe 9783709171936 https://doi.org/10.1007/978-3-7091-0560-3 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Palankovski, Vassil Quay, Rüdiger Analysis and Simulation of Heterostructure Devices Engineering Electronics and Microelectronics, Instrumentation Optical and Electronic Materials Surfaces and Interfaces, Thin Films Microwaves, RF and Optical Engineering Simulation and Modeling Computer simulation Microwaves Optical engineering Electronics Microelectronics Optical materials Electronic materials Materials / Surfaces Thin films Heterostruktur-Bauelement (DE-588)4236378-0 gnd |
| subject_GND | (DE-588)4236378-0 |
| title | Analysis and Simulation of Heterostructure Devices |
| title_auth | Analysis and Simulation of Heterostructure Devices |
| title_exact_search | Analysis and Simulation of Heterostructure Devices |
| title_full | Analysis and Simulation of Heterostructure Devices by Vassil Palankovski, Rüdiger Quay |
| title_fullStr | Analysis and Simulation of Heterostructure Devices by Vassil Palankovski, Rüdiger Quay |
| title_full_unstemmed | Analysis and Simulation of Heterostructure Devices by Vassil Palankovski, Rüdiger Quay |
| title_short | Analysis and Simulation of Heterostructure Devices |
| title_sort | analysis and simulation of heterostructure devices |
| topic | Engineering Electronics and Microelectronics, Instrumentation Optical and Electronic Materials Surfaces and Interfaces, Thin Films Microwaves, RF and Optical Engineering Simulation and Modeling Computer simulation Microwaves Optical engineering Electronics Microelectronics Optical materials Electronic materials Materials / Surfaces Thin films Heterostruktur-Bauelement (DE-588)4236378-0 gnd |
| topic_facet | Engineering Electronics and Microelectronics, Instrumentation Optical and Electronic Materials Surfaces and Interfaces, Thin Films Microwaves, RF and Optical Engineering Simulation and Modeling Computer simulation Microwaves Optical engineering Electronics Microelectronics Optical materials Electronic materials Materials / Surfaces Thin films Heterostruktur-Bauelement |
| url | https://doi.org/10.1007/978-3-7091-0560-3 |
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