Ferroelectric Memories:
Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Berlin, Heidelberg
Springer Berlin Heidelberg
2000
|
| Schriftenreihe: | Springer Series in Advanced Microelectronics
3 |
| Schlagworte: | |
| Online-Zugang: | BTU01 FHI01 URL des Erstveröffentlichers |
| Zusammenfassung: | Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied physicists, electrical engineers, materials scientists and ceramists, it includes ferroelectric fundamentals, especially for thin films, circuit diagrams and processsing chapters, but emphazises device physics. Breakdown mechanisms, switching kinetics and leakage current mechanisms have lengthly chapters devoted to them. The book will be welcomed by research scientists in industry and government laboratories and in universities. It also contains 76 problems for students, making it particularly useful as a textbook for fourth-year undergraduate or first-year graduate students |
| Beschreibung: | 1 Online-Ressource (XVI, 248 p. 95 illus) |
| ISBN: | 9783662043073 |
| DOI: | 10.1007/978-3-662-04307-3 |
Internformat
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| 520 | |a Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied physicists, electrical engineers, materials scientists and ceramists, it includes ferroelectric fundamentals, especially for thin films, circuit diagrams and processsing chapters, but emphazises device physics. Breakdown mechanisms, switching kinetics and leakage current mechanisms have lengthly chapters devoted to them. The book will be welcomed by research scientists in industry and government laboratories and in universities. It also contains 76 problems for students, making it particularly useful as a textbook for fourth-year undergraduate or first-year graduate students | ||
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Datensatz im Suchindex
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-3-662-04307-3 |
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| id | DE-604.BV045149363 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:10:03Z |
| institution | BVB |
| isbn | 9783662043073 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030539062 |
| oclc_num | 1184494554 |
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| owner_facet | DE-573 DE-634 |
| physical | 1 Online-Ressource (XVI, 248 p. 95 illus) |
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| publisher | Springer Berlin Heidelberg |
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| series2 | Springer Series in Advanced Microelectronics |
| spelling | Scott, James F. 1942-2020 Verfasser (DE-588)121472183 aut Ferroelectric Memories by James F. Scott Berlin, Heidelberg Springer Berlin Heidelberg 2000 1 Online-Ressource (XVI, 248 p. 95 illus) txt rdacontent c rdamedia cr rdacarrier Springer Series in Advanced Microelectronics 3 Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied physicists, electrical engineers, materials scientists and ceramists, it includes ferroelectric fundamentals, especially for thin films, circuit diagrams and processsing chapters, but emphazises device physics. Breakdown mechanisms, switching kinetics and leakage current mechanisms have lengthly chapters devoted to them. The book will be welcomed by research scientists in industry and government laboratories and in universities. It also contains 76 problems for students, making it particularly useful as a textbook for fourth-year undergraduate or first-year graduate students Engineering Electronics and Microelectronics, Instrumentation Computer Engineering Applied and Technical Physics Metallic Materials Memory Structures Computer memory systems Computer engineering Physics Electronics Microelectronics Metals Speicher Informatik (DE-588)4077653-0 gnd rswk-swf Ferroelektrikum (DE-588)4154121-2 gnd rswk-swf Ferroelektrikum (DE-588)4154121-2 s Speicher Informatik (DE-588)4077653-0 s 1\p DE-604 Erscheint auch als Druck-Ausgabe 9783642085659 https://doi.org/10.1007/978-3-662-04307-3 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Scott, James F. 1942-2020 Ferroelectric Memories Engineering Electronics and Microelectronics, Instrumentation Computer Engineering Applied and Technical Physics Metallic Materials Memory Structures Computer memory systems Computer engineering Physics Electronics Microelectronics Metals Speicher Informatik (DE-588)4077653-0 gnd Ferroelektrikum (DE-588)4154121-2 gnd |
| subject_GND | (DE-588)4077653-0 (DE-588)4154121-2 |
| title | Ferroelectric Memories |
| title_auth | Ferroelectric Memories |
| title_exact_search | Ferroelectric Memories |
| title_full | Ferroelectric Memories by James F. Scott |
| title_fullStr | Ferroelectric Memories by James F. Scott |
| title_full_unstemmed | Ferroelectric Memories by James F. Scott |
| title_short | Ferroelectric Memories |
| title_sort | ferroelectric memories |
| topic | Engineering Electronics and Microelectronics, Instrumentation Computer Engineering Applied and Technical Physics Metallic Materials Memory Structures Computer memory systems Computer engineering Physics Electronics Microelectronics Metals Speicher Informatik (DE-588)4077653-0 gnd Ferroelektrikum (DE-588)4154121-2 gnd |
| topic_facet | Engineering Electronics and Microelectronics, Instrumentation Computer Engineering Applied and Technical Physics Metallic Materials Memory Structures Computer memory systems Computer engineering Physics Electronics Microelectronics Metals Speicher Informatik Ferroelektrikum |
| url | https://doi.org/10.1007/978-3-662-04307-3 |
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