Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses: Fundamental Mechanisms and Application to IC Interconnect Technology
As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main c...
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| Hauptverfasser: | , , |
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| Format: | Elektronisch E-Book |
| Sprache: | English |
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Boston, MA
Springer US
2002
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| Schlagworte: | |
| Online-Zugang: | FHI01 BTU01 Volltext Inhaltsverzeichnis |
| Zusammenfassung: | As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-kappa dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials. The focus of this book is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning |
| Beschreibung: | 1 Online-Ressource (XIV, 229 p) |
| ISBN: | 9781461511656 |
| DOI: | 10.1007/978-1-4615-1165-6 |
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| 520 | |a As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-kappa dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials. The focus of this book is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning | ||
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1.1 VERBLINDUNG: EIN BEDEUTENDER ECKPFEILER EINES MODERNEN
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1.2 VERBLINDUNG: EINE SCHUTZMASSNAHME GEGEN BIAS 10
1.3 PRUEFUNG DER WIRKSAMKEIT EINER VERBLINDUNG 12
1.4 FRAGESTELLUNGEN UND HYPOTHESEN UNSERER STUDIE 14
2 BAETHGE C., ASSALL O. P., BALDESSARINI R. J. SYSTEMATIC REVIEW OF
BLINDING *
ASSESSMENT IN RANDOMIZED CONTROLLED TRIALS IN SCHIZOPHRENIA AND AFFECTI
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3.1.1 ANTEIL DER PUBLIKATIONEN, WELCHER INFORMATIONEN UEBER DIE WIRK
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3.1.2 VORGEHEN DER WISSENSCHAFTLER HINSICHTLICH DER EVALUATION EINER
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3.1.3 GRAD DER VERBLINDUNG VON STUDIENTEILNEHMERN UND WISSENSCHAFTLERN
29
3.1.4 VERGLEICH DER PUBLIKATIONEN MIT ERGEBNISSEN EINER PRUEFUNG EINER
VERBLINDUNG MIT PUBLIKATIONEN, BEI DENEN DIESE ANGABE FEHLTE . . 29
3.1.5 SAEKULARE VERAENDERUNG DER HAEUFIGKEIT VON WIRKSAMKEITSPRUEFUNGEN 30
3.1.6 AUSWIRKUNG DER ENTBLINDUNG VON STUDIENTEILNEHMERN UND WIS
SENSCHAFTLERN AUF DIE EFFEKTGROESSEN EINER STUDIE 30
3.1.7 ANTEIL DER VEROEFFENTLICHUNGEN, WELCHER DIE CONSORT-KRITERIEN
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3.2.1 STAERKEN 32
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3.3.1 UNSERE EMPFEHLUNGEN FUER DIE PRUEFUNG UND DOKUMENTATION EINER
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3.3.2 ABSCHLIESSENDE BETRACHTUNG 35
4 ZUSAMMENFASSUNG 37
5 LITERATURVERZEICHNIS 39
6 ANHANG 65
7 LEBENSLAUF 69
7
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| spelling | Borst, Christopher L. Verfasser aut Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses Fundamental Mechanisms and Application to IC Interconnect Technology by Christopher L. Borst, William N. Gill, Ronald J. Gutmann Boston, MA Springer US 2002 1 Online-Ressource (XIV, 229 p) txt rdacontent c rdamedia cr rdacarrier As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-kappa dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials. The focus of this book is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning Engineering Manufacturing, Machines, Tools Electrical Engineering Theoretical and Computational Chemistry Optical and Electronic Materials Chemistry, Physical and theoretical Manufacturing industries Machines Tools Electrical engineering Optical materials Electronic materials Gill, William N. aut Gutmann, Ronald J. aut Erscheint auch als Druck-Ausgabe 9781402071935 https://doi.org/10.1007/978-1-4615-1165-6 Verlag URL des Erstveröffentlichers Volltext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=030538597&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Borst, Christopher L. Gill, William N. Gutmann, Ronald J. Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses Fundamental Mechanisms and Application to IC Interconnect Technology Engineering Manufacturing, Machines, Tools Electrical Engineering Theoretical and Computational Chemistry Optical and Electronic Materials Chemistry, Physical and theoretical Manufacturing industries Machines Tools Electrical engineering Optical materials Electronic materials |
| title | Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses Fundamental Mechanisms and Application to IC Interconnect Technology |
| title_auth | Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses Fundamental Mechanisms and Application to IC Interconnect Technology |
| title_exact_search | Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses Fundamental Mechanisms and Application to IC Interconnect Technology |
| title_full | Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses Fundamental Mechanisms and Application to IC Interconnect Technology by Christopher L. Borst, William N. Gill, Ronald J. Gutmann |
| title_fullStr | Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses Fundamental Mechanisms and Application to IC Interconnect Technology by Christopher L. Borst, William N. Gill, Ronald J. Gutmann |
| title_full_unstemmed | Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses Fundamental Mechanisms and Application to IC Interconnect Technology by Christopher L. Borst, William N. Gill, Ronald J. Gutmann |
| title_short | Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses |
| title_sort | chemical mechanical polishing of low dielectric constant polymers and organosilicate glasses fundamental mechanisms and application to ic interconnect technology |
| title_sub | Fundamental Mechanisms and Application to IC Interconnect Technology |
| topic | Engineering Manufacturing, Machines, Tools Electrical Engineering Theoretical and Computational Chemistry Optical and Electronic Materials Chemistry, Physical and theoretical Manufacturing industries Machines Tools Electrical engineering Optical materials Electronic materials |
| topic_facet | Engineering Manufacturing, Machines, Tools Electrical Engineering Theoretical and Computational Chemistry Optical and Electronic Materials Chemistry, Physical and theoretical Manufacturing industries Machines Tools Electrical engineering Optical materials Electronic materials |
| url | https://doi.org/10.1007/978-1-4615-1165-6 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=030538597&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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