Growth and characterization of antimony-based quantum dots in GaP matrix for nanomemories:
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1. Verfasser: | |
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Format: | Abschlussarbeit Buch |
Sprache: | English |
Veröffentlicht: |
Berlin
2018
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Schlagworte: | |
Online-Zugang: | Volltext |
Beschreibung: | 127 Seiten Illustrationen, Diagramme |
DOI: | 10.14279/depositonce-7076 |
Internformat
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author | Sala, Elisa Maddalena |
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physical | 127 Seiten Illustrationen, Diagramme |
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spelling | Sala, Elisa Maddalena Verfasser (DE-588)116272725X aut Growth and characterization of antimony-based quantum dots in GaP matrix for nanomemories vorgelegt von M.Sc. Physik Elisa Maddalena Sala, geb. in Bergamo Berlin 2018 127 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Dissertation Technische Universität Berlin 2018 Nanodot-Speicher (DE-588)7522157-3 gnd rswk-swf MOCVD-Verfahren (DE-588)4314628-4 gnd rswk-swf Galliumphosphid (DE-588)4155879-0 gnd rswk-swf Quantenpunkt (DE-588)4263396-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Quantenpunkt (DE-588)4263396-5 s Galliumphosphid (DE-588)4155879-0 s MOCVD-Verfahren (DE-588)4314628-4 s Nanodot-Speicher (DE-588)7522157-3 s DE-604 Erscheint auch als Online-Ausgabe 10.14279/depositonce-7076 (DE-604)BV045087361 https://doi.org/10.14279/depositonce-7076 Resolving-System kostenfrei Volltext |
spellingShingle | Sala, Elisa Maddalena Growth and characterization of antimony-based quantum dots in GaP matrix for nanomemories Nanodot-Speicher (DE-588)7522157-3 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Galliumphosphid (DE-588)4155879-0 gnd Quantenpunkt (DE-588)4263396-5 gnd |
subject_GND | (DE-588)7522157-3 (DE-588)4314628-4 (DE-588)4155879-0 (DE-588)4263396-5 (DE-588)4113937-9 |
title | Growth and characterization of antimony-based quantum dots in GaP matrix for nanomemories |
title_auth | Growth and characterization of antimony-based quantum dots in GaP matrix for nanomemories |
title_exact_search | Growth and characterization of antimony-based quantum dots in GaP matrix for nanomemories |
title_full | Growth and characterization of antimony-based quantum dots in GaP matrix for nanomemories vorgelegt von M.Sc. Physik Elisa Maddalena Sala, geb. in Bergamo |
title_fullStr | Growth and characterization of antimony-based quantum dots in GaP matrix for nanomemories vorgelegt von M.Sc. Physik Elisa Maddalena Sala, geb. in Bergamo |
title_full_unstemmed | Growth and characterization of antimony-based quantum dots in GaP matrix for nanomemories vorgelegt von M.Sc. Physik Elisa Maddalena Sala, geb. in Bergamo |
title_short | Growth and characterization of antimony-based quantum dots in GaP matrix for nanomemories |
title_sort | growth and characterization of antimony based quantum dots in gap matrix for nanomemories |
topic | Nanodot-Speicher (DE-588)7522157-3 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Galliumphosphid (DE-588)4155879-0 gnd Quantenpunkt (DE-588)4263396-5 gnd |
topic_facet | Nanodot-Speicher MOCVD-Verfahren Galliumphosphid Quantenpunkt Hochschulschrift |
url | https://doi.org/10.14279/depositonce-7076 |
work_keys_str_mv | AT salaelisamaddalena growthandcharacterizationofantimonybasedquantumdotsingapmatrixfornanomemories |