Modeling nanowire and double-gate junctionless field-effect transistors:
The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models f...
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Cambridge
Cambridge University Press
2018
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| Schlagworte: | |
| Online-Zugang: | BSB01 FHN01 UBG01 URL des Erstveröffentlichers |
| Zusammenfassung: | The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field |
| Beschreibung: | Title from publisher's bibliographic system (viewed on 26 Feb 2018) |
| Beschreibung: | 1 Online-Ressource (xix, 233 Seiten) |
| DOI: | 10.1017/9781316676899 |
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Datensatz im Suchindex
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| dewey-search | 621.3815/284 |
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1017/9781316676899 |
| format | Electronic eBook |
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| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:06:18Z |
| institution | BVB |
| language | English |
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| spelling | Jazaeri, Farzan Verfasser aut Modeling nanowire and double-gate junctionless field-effect transistors Farzan Jazaeri, Ecole Polytechnique Fédérale de Lausanne, Jean-Michel Sallese, Ecole Polytechnique Fédérale de Lausanne Cambridge Cambridge University Press 2018 1 Online-Ressource (xix, 233 Seiten) txt rdacontent c rdamedia cr rdacarrier Title from publisher's bibliographic system (viewed on 26 Feb 2018) The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field Metal semiconductor field-effect transistors Nanowires Sallese, Jean-Michel Sonstige oth Erscheint auch als Druck-Ausgabe, hardback 9781107162044 https://doi.org/10.1017/9781316676899 Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Jazaeri, Farzan Modeling nanowire and double-gate junctionless field-effect transistors Metal semiconductor field-effect transistors Nanowires |
| title | Modeling nanowire and double-gate junctionless field-effect transistors |
| title_auth | Modeling nanowire and double-gate junctionless field-effect transistors |
| title_exact_search | Modeling nanowire and double-gate junctionless field-effect transistors |
| title_full | Modeling nanowire and double-gate junctionless field-effect transistors Farzan Jazaeri, Ecole Polytechnique Fédérale de Lausanne, Jean-Michel Sallese, Ecole Polytechnique Fédérale de Lausanne |
| title_fullStr | Modeling nanowire and double-gate junctionless field-effect transistors Farzan Jazaeri, Ecole Polytechnique Fédérale de Lausanne, Jean-Michel Sallese, Ecole Polytechnique Fédérale de Lausanne |
| title_full_unstemmed | Modeling nanowire and double-gate junctionless field-effect transistors Farzan Jazaeri, Ecole Polytechnique Fédérale de Lausanne, Jean-Michel Sallese, Ecole Polytechnique Fédérale de Lausanne |
| title_short | Modeling nanowire and double-gate junctionless field-effect transistors |
| title_sort | modeling nanowire and double gate junctionless field effect transistors |
| topic | Metal semiconductor field-effect transistors Nanowires |
| topic_facet | Metal semiconductor field-effect transistors Nanowires |
| url | https://doi.org/10.1017/9781316676899 |
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