High-k gate dielectrics for CMOS technology:
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Weinheim
Wiley-VCH
2012
|
| Schlagworte: | |
| Beschreibung: | xxxi, 558 p. |
| ISBN: | 9783527330324 9783527646371 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV044849908 | ||
| 003 | DE-604 | ||
| 005 | 20180305 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 180305s2012 |||| o||u| ||||||eng d | ||
| 020 | |a 9783527330324 |9 978-3-527-33032-4 | ||
| 020 | |a 9783527646371 |c Online |9 978-3-527-64637-1 | ||
| 035 | |a (ZDB-38-ESG)ebr10653595 | ||
| 035 | |a (OCoLC)798536325 | ||
| 035 | |a (DE-599)BVBBV044849908 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 082 | 0 | |a 538.24 |2 23 | |
| 245 | 1 | 0 | |a High-k gate dielectrics for CMOS technology |c edited by Gang He and Zhaoqi Sun |
| 264 | 1 | |a Weinheim |b Wiley-VCH |c 2012 | |
| 300 | |a xxxi, 558 p. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 505 | 8 | |a Includes bibliographical references and index | |
| 505 | 8 | |a pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions | |
| 650 | 4 | |a Dielectrics | |
| 650 | 4 | |a Metal oxide semiconductors, Complementary | |
| 650 | 0 | 7 | |a CMOS |0 (DE-588)4010319-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Gate-Oxid |0 (DE-588)4269383-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a High-k-Dielektrikum |0 (DE-588)7602833-1 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a High-k-Dielektrikum |0 (DE-588)7602833-1 |D s |
| 689 | 0 | 1 | |a CMOS |0 (DE-588)4010319-5 |D s |
| 689 | 0 | 2 | |a Gate-Oxid |0 (DE-588)4269383-4 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a He, Gang |e Sonstige |4 oth | |
| 700 | 1 | |a Sun, Zhaoqi |e Sonstige |4 oth | |
| 912 | |a ZDB-38-ESG | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-030244768 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804178365405462528 |
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| any_adam_object | |
| building | Verbundindex |
| bvnumber | BV044849908 |
| collection | ZDB-38-ESG |
| contents | Includes bibliographical references and index pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions |
| ctrlnum | (ZDB-38-ESG)ebr10653595 (OCoLC)798536325 (DE-599)BVBBV044849908 |
| dewey-full | 538.24 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 538 - Magnetism |
| dewey-raw | 538.24 |
| dewey-search | 538.24 |
| dewey-sort | 3538.24 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| format | Electronic eBook |
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| id | DE-604.BV044849908 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:02:49Z |
| institution | BVB |
| isbn | 9783527330324 9783527646371 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030244768 |
| oclc_num | 798536325 |
| open_access_boolean | |
| physical | xxxi, 558 p. |
| psigel | ZDB-38-ESG |
| publishDate | 2012 |
| publishDateSearch | 2012 |
| publishDateSort | 2012 |
| publisher | Wiley-VCH |
| record_format | marc |
| spelling | High-k gate dielectrics for CMOS technology edited by Gang He and Zhaoqi Sun Weinheim Wiley-VCH 2012 xxxi, 558 p. txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references and index pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions Dielectrics Metal oxide semiconductors, Complementary CMOS (DE-588)4010319-5 gnd rswk-swf Gate-Oxid (DE-588)4269383-4 gnd rswk-swf High-k-Dielektrikum (DE-588)7602833-1 gnd rswk-swf High-k-Dielektrikum (DE-588)7602833-1 s CMOS (DE-588)4010319-5 s Gate-Oxid (DE-588)4269383-4 s 1\p DE-604 He, Gang Sonstige oth Sun, Zhaoqi Sonstige oth 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | High-k gate dielectrics for CMOS technology Includes bibliographical references and index pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions Dielectrics Metal oxide semiconductors, Complementary CMOS (DE-588)4010319-5 gnd Gate-Oxid (DE-588)4269383-4 gnd High-k-Dielektrikum (DE-588)7602833-1 gnd |
| subject_GND | (DE-588)4010319-5 (DE-588)4269383-4 (DE-588)7602833-1 |
| title | High-k gate dielectrics for CMOS technology |
| title_auth | High-k gate dielectrics for CMOS technology |
| title_exact_search | High-k gate dielectrics for CMOS technology |
| title_full | High-k gate dielectrics for CMOS technology edited by Gang He and Zhaoqi Sun |
| title_fullStr | High-k gate dielectrics for CMOS technology edited by Gang He and Zhaoqi Sun |
| title_full_unstemmed | High-k gate dielectrics for CMOS technology edited by Gang He and Zhaoqi Sun |
| title_short | High-k gate dielectrics for CMOS technology |
| title_sort | high k gate dielectrics for cmos technology |
| topic | Dielectrics Metal oxide semiconductors, Complementary CMOS (DE-588)4010319-5 gnd Gate-Oxid (DE-588)4269383-4 gnd High-k-Dielektrikum (DE-588)7602833-1 gnd |
| topic_facet | Dielectrics Metal oxide semiconductors, Complementary CMOS Gate-Oxid High-k-Dielektrikum |
| work_keys_str_mv | AT hegang highkgatedielectricsforcmostechnology AT sunzhaoqi highkgatedielectricsforcmostechnology |