Oxide reliability: a summary of silicon oxide wearout, breakdown, and reliability
Gespeichert in:
Format: | Elektronisch E-Book |
---|---|
Sprache: | English |
Veröffentlicht: |
[River Edge, NJ]
World Scientific
c2002
|
Schriftenreihe: | Selected topics in electronics and systems
v. 23 |
Schlagworte: | |
Beschreibung: | ix, 270 p. |
ISBN: | 9810248423 |
Internformat
MARC
LEADER | 00000nmm a2200000zcb4500 | ||
---|---|---|---|
001 | BV044837815 | ||
003 | DE-604 | ||
005 | 20180305 | ||
007 | cr|uuu---uuuuu | ||
008 | 180305s2002 |||| o||u| ||||||eng d | ||
020 | |a 9810248423 |9 981-02-4842-3 | ||
035 | |a (ZDB-38-ESG)ebr10201190 | ||
035 | |a (OCoLC)614462997 | ||
035 | |a (DE-599)BVBBV044837815 | ||
040 | |a DE-604 |b ger |e aacr | ||
041 | 0 | |a eng | |
082 | 0 | |a 621.39/732 |2 21 | |
245 | 1 | 0 | |a Oxide reliability |b a summary of silicon oxide wearout, breakdown, and reliability |c editor, D.J. Dumin |
264 | 1 | |a [River Edge, NJ] |b World Scientific |c c2002 | |
300 | |a ix, 270 p. | ||
336 | |b txt |2 rdacontent | ||
337 | |b c |2 rdamedia | ||
338 | |b cr |2 rdacarrier | ||
490 | 0 | |a Selected topics in electronics and systems |v v. 23 | |
505 | 8 | |a Includes bibliographical references | |
650 | 4 | |a Metal oxide semiconductors |x Reliability | |
650 | 4 | |a Silicon oxide |x Deterioration | |
650 | 0 | 7 | |a Oxidschicht |0 (DE-588)4044242-1 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Stabilität |0 (DE-588)4056693-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a MOS-Schaltung |0 (DE-588)4135571-4 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a MOS-Schaltung |0 (DE-588)4135571-4 |D s |
689 | 0 | 1 | |a Oxidschicht |0 (DE-588)4044242-1 |D s |
689 | 0 | 2 | |a Stabilität |0 (DE-588)4056693-6 |D s |
689 | 0 | |8 1\p |5 DE-604 | |
700 | 1 | |a Dumin, D. J. |e Sonstige |4 oth | |
912 | |a ZDB-38-ESG | ||
999 | |a oai:aleph.bib-bvb.de:BVB01-030232677 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
_version_ | 1804178343851982848 |
---|---|
any_adam_object | |
building | Verbundindex |
bvnumber | BV044837815 |
collection | ZDB-38-ESG |
contents | Includes bibliographical references |
ctrlnum | (ZDB-38-ESG)ebr10201190 (OCoLC)614462997 (DE-599)BVBBV044837815 |
dewey-full | 621.39/732 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.39/732 |
dewey-search | 621.39/732 |
dewey-sort | 3621.39 3732 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Electronic eBook |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01508nmm a2200421zcb4500</leader><controlfield tag="001">BV044837815</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20180305 </controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">180305s2002 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9810248423</subfield><subfield code="9">981-02-4842-3</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-38-ESG)ebr10201190</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)614462997</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV044837815</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.39/732</subfield><subfield code="2">21</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Oxide reliability</subfield><subfield code="b">a summary of silicon oxide wearout, breakdown, and reliability</subfield><subfield code="c">editor, D.J. Dumin</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">[River Edge, NJ]</subfield><subfield code="b">World Scientific</subfield><subfield code="c">c2002</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">ix, 270 p.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Selected topics in electronics and systems</subfield><subfield code="v">v. 23</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">Includes bibliographical references</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors</subfield><subfield code="x">Reliability</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon oxide</subfield><subfield code="x">Deterioration</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Oxidschicht</subfield><subfield code="0">(DE-588)4044242-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Stabilität</subfield><subfield code="0">(DE-588)4056693-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-Schaltung</subfield><subfield code="0">(DE-588)4135571-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS-Schaltung</subfield><subfield code="0">(DE-588)4135571-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Oxidschicht</subfield><subfield code="0">(DE-588)4044242-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Stabilität</subfield><subfield code="0">(DE-588)4056693-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dumin, D. J.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-38-ESG</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-030232677</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
id | DE-604.BV044837815 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T08:02:28Z |
institution | BVB |
isbn | 9810248423 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030232677 |
oclc_num | 614462997 |
open_access_boolean | |
physical | ix, 270 p. |
psigel | ZDB-38-ESG |
publishDate | 2002 |
publishDateSearch | 2002 |
publishDateSort | 2002 |
publisher | World Scientific |
record_format | marc |
series2 | Selected topics in electronics and systems |
spelling | Oxide reliability a summary of silicon oxide wearout, breakdown, and reliability editor, D.J. Dumin [River Edge, NJ] World Scientific c2002 ix, 270 p. txt rdacontent c rdamedia cr rdacarrier Selected topics in electronics and systems v. 23 Includes bibliographical references Metal oxide semiconductors Reliability Silicon oxide Deterioration Oxidschicht (DE-588)4044242-1 gnd rswk-swf Stabilität (DE-588)4056693-6 gnd rswk-swf MOS-Schaltung (DE-588)4135571-4 gnd rswk-swf MOS-Schaltung (DE-588)4135571-4 s Oxidschicht (DE-588)4044242-1 s Stabilität (DE-588)4056693-6 s 1\p DE-604 Dumin, D. J. Sonstige oth 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Oxide reliability a summary of silicon oxide wearout, breakdown, and reliability Includes bibliographical references Metal oxide semiconductors Reliability Silicon oxide Deterioration Oxidschicht (DE-588)4044242-1 gnd Stabilität (DE-588)4056693-6 gnd MOS-Schaltung (DE-588)4135571-4 gnd |
subject_GND | (DE-588)4044242-1 (DE-588)4056693-6 (DE-588)4135571-4 |
title | Oxide reliability a summary of silicon oxide wearout, breakdown, and reliability |
title_auth | Oxide reliability a summary of silicon oxide wearout, breakdown, and reliability |
title_exact_search | Oxide reliability a summary of silicon oxide wearout, breakdown, and reliability |
title_full | Oxide reliability a summary of silicon oxide wearout, breakdown, and reliability editor, D.J. Dumin |
title_fullStr | Oxide reliability a summary of silicon oxide wearout, breakdown, and reliability editor, D.J. Dumin |
title_full_unstemmed | Oxide reliability a summary of silicon oxide wearout, breakdown, and reliability editor, D.J. Dumin |
title_short | Oxide reliability |
title_sort | oxide reliability a summary of silicon oxide wearout breakdown and reliability |
title_sub | a summary of silicon oxide wearout, breakdown, and reliability |
topic | Metal oxide semiconductors Reliability Silicon oxide Deterioration Oxidschicht (DE-588)4044242-1 gnd Stabilität (DE-588)4056693-6 gnd MOS-Schaltung (DE-588)4135571-4 gnd |
topic_facet | Metal oxide semiconductors Reliability Silicon oxide Deterioration Oxidschicht Stabilität MOS-Schaltung |
work_keys_str_mv | AT dumindj oxidereliabilityasummaryofsiliconoxidewearoutbreakdownandreliability |