Silicon RF power MOSFETS:
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Singapore
World Scientific
c2005
|
Schlagworte: | |
Beschreibung: | xvi, 302 p. |
ISBN: | 9812561218 |
Internformat
MARC
LEADER | 00000nmm a2200000zc 4500 | ||
---|---|---|---|
001 | BV044835092 | ||
003 | DE-604 | ||
005 | 20180305 | ||
007 | cr|uuu---uuuuu | ||
008 | 180305s2005 |||| o||u| ||||||eng d | ||
020 | |a 9812561218 |9 981-256-121-8 | ||
035 | |a (ZDB-38-ESG)ebr10126001 | ||
035 | |a (OCoLC)560092203 | ||
035 | |a (DE-599)BVBBV044835092 | ||
040 | |a DE-604 |b ger |e aacr | ||
041 | 0 | |a eng | |
082 | 0 | |a 621.3815/284 |2 22 | |
100 | 1 | |a Baliga, B. Jayant |d 1948- |e Verfasser |4 aut | |
245 | 1 | 0 | |a Silicon RF power MOSFETS |c B. Jayant Baliga |
264 | 1 | |a Singapore |b World Scientific |c c2005 | |
300 | |a xvi, 302 p. | ||
336 | |b txt |2 rdacontent | ||
337 | |b c |2 rdamedia | ||
338 | |b cr |2 rdacarrier | ||
505 | 8 | |a Includes bibliographical references and index | |
650 | 4 | |a Metal oxide semiconductor field-effect transistors | |
650 | 4 | |a Field-effect transistors | |
912 | |a ZDB-38-ESG | ||
999 | |a oai:aleph.bib-bvb.de:BVB01-030229955 |
Datensatz im Suchindex
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---|---|
any_adam_object | |
author | Baliga, B. Jayant 1948- |
author_facet | Baliga, B. Jayant 1948- |
author_role | aut |
author_sort | Baliga, B. Jayant 1948- |
author_variant | b j b bj bjb |
building | Verbundindex |
bvnumber | BV044835092 |
collection | ZDB-38-ESG |
contents | Includes bibliographical references and index |
ctrlnum | (ZDB-38-ESG)ebr10126001 (OCoLC)560092203 (DE-599)BVBBV044835092 |
dewey-full | 621.3815/284 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/284 |
dewey-search | 621.3815/284 |
dewey-sort | 3621.3815 3284 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Electronic eBook |
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id | DE-604.BV044835092 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T08:02:24Z |
institution | BVB |
isbn | 9812561218 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030229955 |
oclc_num | 560092203 |
open_access_boolean | |
physical | xvi, 302 p. |
psigel | ZDB-38-ESG |
publishDate | 2005 |
publishDateSearch | 2005 |
publishDateSort | 2005 |
publisher | World Scientific |
record_format | marc |
spelling | Baliga, B. Jayant 1948- Verfasser aut Silicon RF power MOSFETS B. Jayant Baliga Singapore World Scientific c2005 xvi, 302 p. txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references and index Metal oxide semiconductor field-effect transistors Field-effect transistors |
spellingShingle | Baliga, B. Jayant 1948- Silicon RF power MOSFETS Includes bibliographical references and index Metal oxide semiconductor field-effect transistors Field-effect transistors |
title | Silicon RF power MOSFETS |
title_auth | Silicon RF power MOSFETS |
title_exact_search | Silicon RF power MOSFETS |
title_full | Silicon RF power MOSFETS B. Jayant Baliga |
title_fullStr | Silicon RF power MOSFETS B. Jayant Baliga |
title_full_unstemmed | Silicon RF power MOSFETS B. Jayant Baliga |
title_short | Silicon RF power MOSFETS |
title_sort | silicon rf power mosfets |
topic | Metal oxide semiconductor field-effect transistors Field-effect transistors |
topic_facet | Metal oxide semiconductor field-effect transistors Field-effect transistors |
work_keys_str_mv | AT baligabjayant siliconrfpowermosfets |