GaN-based materials and devices: growth, fabrication, characterization and performance
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Singapore
World Scientific
c2004
|
| Schriftenreihe: | Selected topics in electronics and systems
v. 33 |
| Schlagworte: | |
| Beschreibung: | x, 284 p. |
| ISBN: | 9812388443 |
Internformat
MARC
| LEADER | 00000nmm a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV044833286 | ||
| 003 | DE-604 | ||
| 005 | 20180305 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 180305s2004 |||| o||u| ||||||eng d | ||
| 020 | |a 9812388443 |9 981-238-844-3 | ||
| 035 | |a (ZDB-38-ESG)ebr10078535 | ||
| 035 | |a (OCoLC)567959277 | ||
| 035 | |a (DE-599)BVBBV044833286 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 245 | 1 | 0 | |a GaN-based materials and devices |b growth, fabrication, characterization and performance |c editors, M.S. Shur, R.F. Davis |
| 264 | 1 | |a Singapore |b World Scientific |c c2004 | |
| 300 | |a x, 284 p. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a Selected topics in electronics and systems |v v. 33 | |
| 505 | 8 | |a Includes bibliographical references | |
| 650 | 4 | |a Gallium nitride | |
| 650 | 4 | |a Semiconductors | |
| 700 | 1 | |a Shur, Michael |e Sonstige |4 oth | |
| 700 | 1 | |a Davis, Robert F. |d 1942- |e Sonstige |4 oth | |
| 912 | |a ZDB-38-ESG | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-030228149 | ||
Datensatz im Suchindex
| _version_ | 1804178335944671232 |
|---|---|
| any_adam_object | |
| building | Verbundindex |
| bvnumber | BV044833286 |
| collection | ZDB-38-ESG |
| contents | Includes bibliographical references |
| ctrlnum | (ZDB-38-ESG)ebr10078535 (OCoLC)567959277 (DE-599)BVBBV044833286 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01050nmm a2200325zcb4500</leader><controlfield tag="001">BV044833286</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20180305 </controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">180305s2004 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812388443</subfield><subfield code="9">981-238-844-3</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-38-ESG)ebr10078535</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)567959277</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV044833286</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">GaN-based materials and devices</subfield><subfield code="b">growth, fabrication, characterization and performance</subfield><subfield code="c">editors, M.S. Shur, R.F. Davis</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Singapore</subfield><subfield code="b">World Scientific</subfield><subfield code="c">c2004</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">x, 284 p.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Selected topics in electronics and systems</subfield><subfield code="v">v. 33</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">Includes bibliographical references</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gallium nitride</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shur, Michael</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Davis, Robert F.</subfield><subfield code="d">1942-</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-38-ESG</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-030228149</subfield></datafield></record></collection> |
| id | DE-604.BV044833286 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:02:20Z |
| institution | BVB |
| isbn | 9812388443 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030228149 |
| oclc_num | 567959277 |
| open_access_boolean | |
| physical | x, 284 p. |
| psigel | ZDB-38-ESG |
| publishDate | 2004 |
| publishDateSearch | 2004 |
| publishDateSort | 2004 |
| publisher | World Scientific |
| record_format | marc |
| series2 | Selected topics in electronics and systems |
| spelling | GaN-based materials and devices growth, fabrication, characterization and performance editors, M.S. Shur, R.F. Davis Singapore World Scientific c2004 x, 284 p. txt rdacontent c rdamedia cr rdacarrier Selected topics in electronics and systems v. 33 Includes bibliographical references Gallium nitride Semiconductors Shur, Michael Sonstige oth Davis, Robert F. 1942- Sonstige oth |
| spellingShingle | GaN-based materials and devices growth, fabrication, characterization and performance Includes bibliographical references Gallium nitride Semiconductors |
| title | GaN-based materials and devices growth, fabrication, characterization and performance |
| title_auth | GaN-based materials and devices growth, fabrication, characterization and performance |
| title_exact_search | GaN-based materials and devices growth, fabrication, characterization and performance |
| title_full | GaN-based materials and devices growth, fabrication, characterization and performance editors, M.S. Shur, R.F. Davis |
| title_fullStr | GaN-based materials and devices growth, fabrication, characterization and performance editors, M.S. Shur, R.F. Davis |
| title_full_unstemmed | GaN-based materials and devices growth, fabrication, characterization and performance editors, M.S. Shur, R.F. Davis |
| title_short | GaN-based materials and devices |
| title_sort | gan based materials and devices growth fabrication characterization and performance |
| title_sub | growth, fabrication, characterization and performance |
| topic | Gallium nitride Semiconductors |
| topic_facet | Gallium nitride Semiconductors |
| work_keys_str_mv | AT shurmichael ganbasedmaterialsanddevicesgrowthfabricationcharacterizationandperformance AT davisrobertf ganbasedmaterialsanddevicesgrowthfabricationcharacterizationandperformance |