Tetrahedrally bonded amorphous carbon films I: basics, structure and preparation
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[2018]
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263 |
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| Beschreibung: | XXXII, 752 Seiten Illustrationen, Diagramme |
| ISBN: | 9783662559253 |
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MARC
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| 016 | 7 | |a 1139184245 |2 DE-101 | |
| 020 | |a 9783662559253 |c Print |9 978-3-662-55925-3 | ||
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| 041 | 0 | |a eng | |
| 044 | |a gw |c XA-DE-BE | ||
| 049 | |a DE-29T |a DE-83 | ||
| 084 | |a 620 |2 sdnb | ||
| 100 | 1 | |a Schultrich, Bernd |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Tetrahedrally bonded amorphous carbon films I |b basics, structure and preparation |c Bernd Schultrich |
| 264 | 1 | |a Berlin |b Springer |c [2018] | |
| 300 | |a XXXII, 752 Seiten |b Illustrationen, Diagramme | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Springer series in materials science |v 263 | |
| 650 | 0 | 7 | |a Dünne Schicht |0 (DE-588)4136925-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Amorpher Festkörper |0 (DE-588)4120883-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Kohlenstoff |0 (DE-588)4164538-8 |2 gnd |9 rswk-swf |
| 653 | |a Amorphous carbon | ||
| 653 | |a Application of amorphous carbon films | ||
| 653 | |a Structure and properties of carbon films | ||
| 653 | |a Thin carbon films | ||
| 653 | |a Tribology of carbon films | ||
| 689 | 0 | 0 | |a Kohlenstoff |0 (DE-588)4164538-8 |D s |
| 689 | 0 | 1 | |a Amorpher Festkörper |0 (DE-588)4120883-3 |D s |
| 689 | 0 | 2 | |a Dünne Schicht |0 (DE-588)4136925-7 |D s |
| 689 | 0 | |5 DE-604 | |
| 710 | 2 | |a Springer-Verlag GmbH |0 (DE-588)1065168780 |4 pbl | |
| 776 | 0 | 8 | |i Elektronische Reproduktion |z 9783662559277 |
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| 830 | 0 | |a Springer series in materials science |v 263 |w (DE-604)BV000683335 |9 263 | |
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| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=030221369&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
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Datensatz im Suchindex
| _version_ | 1817967989864005632 |
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| adam_text |
CONTENTS
P ART I C ARBON M ATERIALS AND COATINGS
1 C A R B O N
.
3
1.1 CARBON
BONDS.
4
1.2 D IAM O N D
.
8
1.3
GRAPHITE.
11
1.4 THE DIAMOND-GRAPHITE T
RANSITION. 13
1.5 ENGINEERING CARBON M
ATERIALS. 15
1.6 MELTING OF CARBON M ATERIALS
.
23
1.7 VAPORIZATION OF CARBON M
ATERIALS. 29
1.8 RULES AND T H E SE
S.
35
REFERENCES.
37
2 DIAMOND F ILM S
.
41
2.1
GROWTH.
41
2.1.1
HYDROGEN.
42
2.1.2 SUBSTRATE T EM
PERATURE. 43
2.1.3 CARBON/HYDROGEN R A T I O
. 43
2.2 DEPOSITION M ETH O D
S.
44
2.2.1 HOT FILAMENT
DEPOSITION. 47
2.2.2 PLASMA ENHANCED C VD
.
48
2.2.3 FURTHER M
ETHODS.
49
2.3 N
UCLEATION.
49
2.3.1 SCRATCHING NUCLEATION
.
50
2.3.2 NUCLEATION LAYERS
.
51
2.3.3 BIAS ENHANCED NUCLEATION (B E N )
.
52
2.4 FILM STRUCTURE AND SURFACE MORPHOLOGY
.
54
2.4.1 TEXTURED G RO W TH
.
54
2.4.2 HIGHLY ORIENTED DIAMOND
.
57
2.4.3 SINGLE CRYSTALLINE F ILM S
. 58
2.4.4 NANOCRYSTALLINE F ILM S
.
60
2.5 PROPERTIES AND APPLICATIONS
.
60
2.5.1 MECHANICAL PROPERTIES
.
60
2.5.2 T
OOLS.
63
2.5.3 DYNAMIC SYSTEMS
.
64
2.5.4
ELECTROCHEMISTRY.
64
2.5.5 THERMAL CONDUCTIVITY
.
65
2.5.6 OPTICAL W INDOW S
.
67
2.5.7
ELECTRONICS.
68
2.6 RULES AND T H E SE
S.
69
R
EFERENCES.
72
3 NANODIAMOND F IL M S
.
85
3.1 PREPARATION
.
85
3.1.1 ULTRADENSE NUCLEATION
.
85
3.1.2 RENUCLEATION BY REDUCED HYDROGEN E T C H
.
87
3.1.3 BIAS-ENHANCED G ROW
TH. 88
3.1.4 ARGON P RO CE
SS. 91
3.2 PROPERTIES AND APPLICATIONS
.
93
3.2.1 MECHANICAL PROPERTIES
.
93
3.2.2 THERMAL CONDUCTIVITY
.
93
3.2.3 ELECTRICAL CONDUCTIVITY. 95
3.2.4
TRANSPARENCY.
95
3.2.5
APPLICATIONS.
96
3.3 LOW TEMPERATURE
DEPOSITION. 96
3.3.1 ADDITIONAL REACTIVE E LEM ENTS
.
97
3.3.2 INCREASED HYDROCARBON S U P P LY
. 98
3.3.3 INTENSIFIED PRECURSOR
EXCITATION. 98
3.3.4 ARGON P LA S M A
. 98
3.4 RULES AND T H E SE
S.
99
R
EFERENCES.
100
4 AM ORPHOUS C ARBON FILM
S.
105
4.1
CLASSIFICATION.
105
4.2 HYDROGEN
CONTENT.
107
4.3 RULES AND T H E SE
S.
109
REFERENCES.
110
5 HYDROGENATED AM ORPHOUS C ARBON FILMS (A-C :H
). I L L
5.1 O VERVIEW
.
I L L
5.1.1 TA-C:H F ILM S
. I
L L
5.1.2 PLASMA ENHANCED CVD (PECVD)
.
112
5.1.3 STRUCTURAL CLASSIFICATION
.
112
5.2
PREPARATION.
113
5.2.1 DEPOSITION CONDITIONS
.
113
5.2.2 PRECURSOR E FFE C TS
.
115
5.2.3 FREQUENCY EFFECTS
.
115
5.2.4 RF PEC V D
.
117
5.2.5 ECR PEC V D
.
121
5.2.6 MF P E C V D
.
122
5.2.7 DC PECVD
.
122
5.2.8 ARC JET
.
123
5.2.9 ATMOSPHERIC PLASMA C V D
. 123
5.2.10 ELECTROCHEMICAL
DEPOSITION. 124
5.3
GROWTH.
126
5.3.1 SURFACE EFFECTS OF RADICALS AND I O N S
.
127
5.3.2 BALANCE OF PARTICLE FLUXES
.
127
5.3.3 SURFACE R OUGHNESS
.
128
5.4 HYDROGEN
CONTENT.
129
5.4.1 UNBOUND H Y D RO G EN
. 129
5.4.2 HYDROGEN
INCORPORATION. 129
5.4.3 HYDROGEN
REDUCTION. 130
5.5 S TRU CTU
RE.
131
5.5.1 BONDING S T A T E
.
132
5.5.2 STRUCTURE T Y P E S
. 133
5.5.3 D E N SITY
.
134
5.6
PROPERTIES.
137
5.6.1 MECHANICAL PROPERTIES
.
139
5.6.2 THERMAL
PROPERTIES.
144
5.6.3 OPTICAL PROPERTIES
.
146
5.6.4 ELECTRICAL P
ROPERTIES. 151
5.6.5 STRUCTURAL S
TABILITY. 152
5.7 APPLICATIONS
.
154
5.7.1
COMPONENTS.
155
5.7.2 T
OOLS.
156
5.7.3 TRANSPARENT PROTECTIVE
COATINGS. 156
5.7.4 PERMEATION B A RRIE
RS. 157
5.7.5 POTENTIAL APPLICATIONS
.
158
5.8 NONMETAL CONTAINING A-C:H:X F ILM S
.
158
5.8.1
A-C:H:N.
159
5.8.2 A-C:H:SI, A -C :H :S I:0
.
160
5.8.3 A-C :H
:F.
161
5.8.4 MECHANICAL PROPERTIES
.
161
5.8.5 F RICTIO N
.
161
5.8.6 W ETTABILITY
.
163
5.8.7 LOW
K
DIELECTRICS.
164
5.9 METAL CONTAINING A-C:H:ME F ILM S
.
166
5.9.1
PREPARATION.
166
5.9.2 S TRUCTURE
.
168
5.9.3 STRESS
REDUCTION.
172
5.9.4 HARDNESS AND S
TIFFNESS. 173
5.9.5 FRICTION AND W EAR
.
176
5.9.6 R
ESISTIVITY.
177
5.10 RULES AND T H E SE
S.
178
REFERENCES.
183
P A RT II STRUCTURAL DEVELOPMENT OF TA-C FILMS
6 STRUCTURE OF AMORPHOUS C A R B O N
. 195
6.1 STRUCTURAL CHARACTERIZATION OF AMORPHOUS
CARBON. 195
6.1.1 SP3 FRACTION S
.
197
6.1.2 D E N SITY
.
198
6.1.3 RADIAL DENSITY FUNCTION G (R)
.
200
6.1.4 ADDITIONAL CHARACTERISTICS FROM SIMULATED
STRUCTURES
.
204
6.1.5 RAMAN S PECTRUM
.
206
6.1.6 SURFACE ACOUSTIC W AV
ES. 212
6.2 MODELLING OF TA-C
STRUCTURES.
214
6.2.1 SIMULATION P ROCEDURE
.
214
6.2.2 SIMULATION M
ETHODS. 217
6.2.3 INTERATOMIC POTENTIALS
.
219
6.2.4 REVERSE MONTE CARLO TECHNIQUE (R M C )
.
225
6.3 STRUCTURE OF AMORPHOUS SILICON
.
226
6.3.1 HYDROGEN-FREE A - S I
. 226
6.3.2 LIQUID S ILIC O N
. 229
6.4 STRUCTURE OF LIQUID C ARB O N
.
231
6.5 STRUCTURE OF TA-C WITH HIGHEST SP3 CONTENT
.
233
6.5.1 SP3 CONTENT AND D ENSITY
.
235
6.5.2 RADIAL DENSITY F UNCTION
.
236
6.5.3 ADDITIONAL CHARACTERISTICS
.
240
6.5.4 COMPARISON WITH A -S I
.
242
6.6 STRUCTURE OF TA-C WITH REDUCED SP3 C ONTENT
.
243
6.6.1 DENSITY OF AMORPHOUS C A RB O N
. 244
6.6.2 RADIAL DENSITY F
UNCTION. 247
6.6.3 ADDITIONAL CHARACTERISTICS
.
251
6.6.4 POSSIBLE NANODIAMOND INCLUSIONS
.
253
6.7 TOP L A Y E R
.
254
6.8 ULTRATHIN F ILM S
.
257
6.9 RULES AND T H E SE
S.
259
6.9.1 STRUCTURAL CHARACTERIZATION OF AMORPHOUS CARBON . . . 259
6.9.2 MODELLING OF TA-C
STRUCTURES. 261
6.9.3 STRUCTURE OF AMORPHOUS S ILIC O N
.
261
6.9.4 STRUCTURE OF LIQUID C
ARBON. 262
6.9.5 STRUCTURE OF TA-C WITH HIGHEST SP3 C O N TE N T.
262
6.9.6 STRUCTURE OF TA-C WITH REDUCED SP3 C ONTENT. 263
6.9.7 TOP L A Y E
R.
263
6.9.8 ULTRATHIN F ILM
S. 263
REFERENCES.
264
7 INFLUENCE OF DEPOSITION C O N D ITIO N
S. 273
7.1 ION BEAM D
EPOSITION.
274
7.2 ENERGY OF THE INCIDENT CARBON IO N S
.
276
7.2.1 20 E V
.
277
7.2.2 20-600 E V
.
277
7.2.3 600-10 K E V
.
278
7.2.4 10 K E V
.
278
7.3 ANGLE OF INCIDENCE
.
280
7.4 SUBSTRATE TEMPERATURE AND DEPOSITION R A TE
.
282
7.5 LAYERED CARBON FILM
S.
290
7.5.1 DESIGNED M
ULTILAYER. 290
7.5.2 UNINTENTIONAL L AYERING
.
292
7.6 RULES AND T H E SE
S.
293
REFERENCES.
296
8 GROWTH OF TA-C F ILM S
.
299
8.1
SUBPLANTATION.
300
8.1.1 SUBPLANTATION GROWTH M O D E
. 300
8.1.2 PARAMETER RANGE FOR SUBPLANTATION G RO W TH . 304
8.1.3 PENETRATION THRESHOLD
.
308
8.1.4 PROCESS STAGES AND TIME S C A LE S
. 309
8.2 COLLISION C
ASCADE.
314
8.2.1 BINARY COLLISION APPROXIMATION (B C A ).
314
8.2.2 ION TRACK AND PENETRATION D
EPTH. 317
8.2.3 COLLISION CASCADE
.
320
8.2.4 ENERGY
DISSIPATION.
324
8.3 IMPACT-INDUCED FILM GROWTH
.
327
8.3.1 THERMODYNAMICAL ESTIMATIONS
.
327
8.3.2 ATOMIC SIM
ULATION. 329
8.3.3 GROWTH M O D E LS
. 336
8.3.4 TRANSIENT HP/HT M O D
EL. 344
8.3.5 PHENOMENOLOGICAL DESCRIPTION
.
346
8.4 THERMALLY MODIFIED FILM G RO W TH
. 348
8.4.1 THERMALLY ACTIVATED
RELAXATION. 349
8.5 RULES AND T H E SE
S.
354
EXPLANATIONS.
357
E L STOPPING POWER S WITH POWER LAW (FOR (8.5),
(8.32)).
357
E2 BINARY COLLISION APPROXIMATION AND TRIM
PROGRAM (FOR SECT. 8 .2
). 358
E3 FILM GROWTH BY SUBPLANTATION (FOR (8.28))
.
360
E4 KINCHIN-PEASE MODEL (FOR SECT. 8 . 2 )
.
362
E5 THERMAL SPIKE MODEL (FOR SECT. 8 .3 )
.
363
E6 SURFACE FORCE ON POINT DEFECTS (FOR SECT. 8 .4 ) . 365
R
EFERENCES.
366
P A RT III VACUUM ARC DEPOSITION OF C ARBON FILMS
9 VACUUM ARC DISCHARGES WITH C ARBON CATH O D
ES. 373
9.1 CURRENT-VOLTAGE
CHARACTERISTIC.
375
9.2 CATHODE S P O TS
.
380
9.2.1 SPOT S IZ E
.
380
9.2.2 ENERGY F LU X E S
. 381
9.2.3 SPOT S TRU CTU
RE. 384
9.2.4 SPOT D Y N A M IC
.
390
9.3 ARC
PLASMA.
396
9.3.1 PLASMA
FORMATION.
397
9.3.2 PLASMA
STATE.
398
9.3.3 ION BEAM
ACCELERATION. 399
9.3.4 FREE E X P AN SIO N
. 401
9.3.5 MASS F LOW
.
402
9.3.6 ION
ENERGY.
406
9.4 M
ACROPARTICLES.
412
9.4.1 EJECTION OF MACROPARTICLES
.
413
9.4.2 FLIGHT OF THE MACROPARTICLES .
.
. 418
9.4.3 ATTACHMENT OF THE PARTICLES AT THE SUBSTRATE
S U RFA C E
.
421
9.4.4 INCORPORATION OF THE MACROPARTICLES
WITH RESULTING FILM D EFECTS.
426
9.4.5 ELIMINATION OF MACROPARTICLES FROM
THE GROWING F ILM
. 428
9.5 PECULIARITIES OF GRAPHITE ABLATION BY VACUUM
ARC
DISCHARGES.
430
9.6 CARBON FILM DEPOSITION WITH VACUUM ARC DISCHARGES
.
434
9.6.1 UNBIASED
SUBSTRATES. 434
9.6.2 BIASED SUBSTRATES
.
435
9.6.3 SUBSTRATE T EM PERATURE
.
439
9.7 RULES AND T H E SE
S.
441
R
EFERENCES.
445
10 M ETHODS OF VACUUM ARC DEPOSITION OF TA-C F ILM S
.
453
10.1 MAGNETICALLY DRIVEN DC VACUUM A R C S
.
453
10.2 PULSED HIGH CURRENT VACUUM A R C S
.
464
10.2.1 EXPANDING SPOT SYSTEM
.
.
464
10.2.2 PECULIARITIES OF KILOAMPERE ARC C U RRE N TS
.
467
10.2.3 INFLUENCE OF FAST CHANGING ARC C ONDITIONS. 470
10.3 ARC IGNITION WITH HIGH REPETITION RATES
. 472
10.3.1 CONTACT SEPARATION
.
473
10.3.2 IGNITION BY INSULATOR BREAKDOW N
.
473
10.3.3 IGNITION BY LASER P U LSE
S. 477
10.3.4 IGNITION BY HIGH POWER S PUTTERING.
481
10.3.5 SUPERPULSED DC A
RC. 483
10.4 RULES AND T H E SE
S.
486
R
EFERENCES.
488
11 VACUUM ARC WITH PARTICLE F ILTE R IN G
.
493
11.1 CONCEPT OF MAGNETIC
FILTERING. 493
11.2 MACROPARTICLE FILTER
EFFICIENCY. 498
11.3 PLASMA FILTER
TRANSPARENCY.
505
11.4 FILTER SYSTEMS FOR MINIMUM MACROPARTICLE TRANSPARENCY
.
510
11.5 FILTER SYSTEMS FOR LARGE AREA
DEPOSITION. 514
11.6 COMPACT ARC F ILTE RS
.
519
11.7 RULES AND T H E SE
S.
522
R
EFERENCES.
523
12 SPECIAL ARC MODES WITH REDUCED M ACROPARTICLE EM ISSIO N
.
527
12.1 DISTRIBUTED A
RC.
527
12.2 STATIONARY A R C
.
533
12.3 SHUNTING A R C
.
535
12.4 RULES AND T H E SE
S.
540
R
EFERENCES.
541
13 VACUUM ARC EQUIPM ENT FOR MASS PRODUCTION
OF TA-C C O A TIN G
S.
545
13.1 DEMANDS ON INDUSTRIAL EQUIPMENT FOR COATING OF TOOLS AND
COM
PONENTS.
545
13.2 TECHNOLOGICAL C Y CLE
.
547
13.2.1 PRE-DELIVERY C HECK
.
547
13.2.2 WET C
LEANING.
548
13.2.3
LOADING.
548
13.2.4 EVACUATION
.
549
13.2.5 PLASMA
CLEANING.
549
13.2.6 INTERFACE
PREPARATION. 552
13.2.7 D
EPOSITION.
552
13.2.8 COOLING AND V E N TIN G
.
555
13.2.9 FINAL
INSPECTION.
555
13.2.10 A FTERTREATM
ENT.
556
13.3 INDUSTRIAL VACUUM ARC DEVICES FOR TA-C D EPOSITION
.
557
13.3.1 GENERAL A
SPECTS.
558
13.3.2 MEDIUM SIZED C
ATHODES. 560
13.3.3 LARGE C ATH O D
ES. 567
13.3.4 DEPOSITION RATE FOR ROTATING C ARRIE RS
.
572
13.4 RULES AND T H E SE
S.
574
EXPLANATIONS.
577
E L DEPOSITION RATE ON THE CENTRAL AXIS
(FOR 13.10, 13.13)
.
577
E2 DEPOSITION RATE WITH ROTATING CARRIERS
(FOR 13.16, 13.17)
.
579
R
EFERENCES.
581
P A RT IV DEPOSITION OF TA-C FILMS BY PULSED LASER AND BY SPUTTERING
14 C ARBON ABLATION WITH NS L A S E RS
.
585
14.1 PLD ARRANGEMENT
.
585
14.2 TARGET H
EATING.
589
14.2.1 ENERGY I N P U T
.
589
14.2.2 SURFACE
TEMPERATURE. 594
14.3 TARGET ABLATION
.
596
14.4 PLASMA
FORMATION.
598
14.5 PLASMA B E A M
.
605
14.5.1 PLASMA P
ROPAGATION. 605
14.5.2 ANGULAR
DISTRIBUTION.
608
14.5.3 PLASMA
COMPOSITION. 610
14.6 PLASMA E
NERGIES.
614
14.6.1 KRF L A S E R
.
616
14.6.2 ARF L A S E R
.
622
14.6.3 ND-YAG LASER
.
622
14.6.4 V IS -L
ASER.
623
14.7 RULES AND T H E SE
S.
624
REFERENCES.
628
15 C ARBON FILM DEPOSITION WITH NS L A S E R S
. 633
15.1 INFLUENCE OF LASER
INTENSITY.
634
15.1.1 ARF L A S E R
.
635
15.1.2 KRF L A S E R
.
637
15.1.3 ND-YAG L
ASERS.
639
15.2 INFLUENCE OF LASER W AVELENGTH
.
642
15.3 M
ACROPARTICLES.
644
15.4 INFLUENCE OF THE TARGET MATERIAL
.
651
15.5 RULES AND T H E SE
S.
654
REFERENCES.
656
16 RELATED DEPOSITION M E TH O D S
.
661
16.1 COMPARISON OF PLD AND VACUUM ARC DEPOSITION
OF TA-C F ILM S
.
661
16.1.1 CONTROL OF TARGET E ROSION
.
663
16.1.2 CARBON PLASM
A. 663
16.1.3 DEPOSITION EFFICIENCY
.
664
16.2 NS-PLD WITH ADDITIONAL A CTIVATION
.
666
16.3 PECULIARITIES OF CARBON DEPOSITION WITH PS AND FS L A S E R S
.
669
16.4 RULES AND T H E SE
S.
674
16.4.1 COMPARISON OF NS-PLD AND VACUUM ARC DEPOSITION
OF TA-C F ILM S
.
674
16.4.2 NS-PLD WITH ADDITIONAL A CTIVATION.
674
16.4.3 PS AND FS L
ASERS.
675
REFERENCES.
676
17 ACTIVATED SPUTTER DEPOSITION OF TA-C F ILM
S. 679
17.1 SPUTTERING OF CARBON
.
679
17.1.1 YIELD OF CARBON
SPUTTERING. 680
17.1.2 ENERGY OF THE SPUTTERED CARBON PARTICLES
.
684
17.2 DUAL ION BEAM
SPUTTERING.
685
17.3 MAGNETRON
SPUTTERING.
689
17.3.1 PLASMA SPUTTERING
.
689
17.3.2 BALANCED
MAGNETRON. 690
17.3.3 COLLISIONS ENERGY L O S S
. 691
17.3.4 PARTICLE F LU X E
S. 693
17.3.5 ION BEAM ASSISTED MAGNETRON SPUTTERING
.
695
17.3.6 PLASMA ENHANCED MAGNETRON SPUTTERING
.
696
17.3.7 FILTERED CARBON S
PUTTERING. 705
17.3.8 TA-C DEPOSITION IN INDUSTRIAL MAGNETRON COALERS . 706
17.4 HIGH POWER IMPULSE MAGNETRON S PUTTERING
.
710
17.5 RULES AND T H E SE
S.
715
REFERENCES.
717
APPENDIX A: SPECIFIC METHODS FOR TA-C C H ARACTERIZATIO N
. 721
A.1 ULTRASONIC SURFACE W
AVES. 721
A.2 R AM AN
SPECTROSCOPY.
727
APPENDIX B: VALUES AND R E LA TIO N
S. 741
B .L PHYSICAL C
ONSTANTS.
741
B.2 U N
ITS.
741
B.3 C A RB O N
.
741
B.4 C ARBON M
ATERIALS.
742
B.5 HYDROGEN-FREE AMORPHOUS CARBON F ILM S
.
743
B.6 HYDROGENATED AMORPHOUS C ARBON F ILM S
.
746
I N D E X
.
749 |
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| author | Schultrich, Bernd |
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| bvnumber | BV044826469 |
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| discipline | Maschinenbau / Maschinenwesen |
| format | Book |
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| illustrated | Illustrated |
| indexdate | 2024-12-09T13:02:59Z |
| institution | BVB |
| institution_GND | (DE-588)1065168780 |
| isbn | 9783662559253 |
| language | English |
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| physical | XXXII, 752 Seiten Illustrationen, Diagramme |
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| spelling | Schultrich, Bernd Verfasser aut Tetrahedrally bonded amorphous carbon films I basics, structure and preparation Bernd Schultrich Berlin Springer [2018] XXXII, 752 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 263 Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Amorpher Festkörper (DE-588)4120883-3 gnd rswk-swf Kohlenstoff (DE-588)4164538-8 gnd rswk-swf Amorphous carbon Application of amorphous carbon films Structure and properties of carbon films Thin carbon films Tribology of carbon films Kohlenstoff (DE-588)4164538-8 s Amorpher Festkörper (DE-588)4120883-3 s Dünne Schicht (DE-588)4136925-7 s DE-604 Springer-Verlag GmbH (DE-588)1065168780 pbl Elektronische Reproduktion 9783662559277 Erscheint auch als Online-Ausgabe, eBook 978-3-662-55927-7 Springer series in materials science 263 (DE-604)BV000683335 263 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=756e11da8bc74e7cbbf981a1d4327cbe&prov=M&dok_var=1&dok_ext=htm Inhaltstext X:MVB http://www.springer.com/ DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=030221369&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Schultrich, Bernd Tetrahedrally bonded amorphous carbon films I basics, structure and preparation Springer series in materials science Dünne Schicht (DE-588)4136925-7 gnd Amorpher Festkörper (DE-588)4120883-3 gnd Kohlenstoff (DE-588)4164538-8 gnd |
| subject_GND | (DE-588)4136925-7 (DE-588)4120883-3 (DE-588)4164538-8 |
| title | Tetrahedrally bonded amorphous carbon films I basics, structure and preparation |
| title_auth | Tetrahedrally bonded amorphous carbon films I basics, structure and preparation |
| title_exact_search | Tetrahedrally bonded amorphous carbon films I basics, structure and preparation |
| title_full | Tetrahedrally bonded amorphous carbon films I basics, structure and preparation Bernd Schultrich |
| title_fullStr | Tetrahedrally bonded amorphous carbon films I basics, structure and preparation Bernd Schultrich |
| title_full_unstemmed | Tetrahedrally bonded amorphous carbon films I basics, structure and preparation Bernd Schultrich |
| title_short | Tetrahedrally bonded amorphous carbon films I |
| title_sort | tetrahedrally bonded amorphous carbon films i basics structure and preparation |
| title_sub | basics, structure and preparation |
| topic | Dünne Schicht (DE-588)4136925-7 gnd Amorpher Festkörper (DE-588)4120883-3 gnd Kohlenstoff (DE-588)4164538-8 gnd |
| topic_facet | Dünne Schicht Amorpher Festkörper Kohlenstoff |
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| volume_link | (DE-604)BV000683335 |
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