Investigation of GaAs-based THz devices utilizing intersubband transitions:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Bochum
Wintersemester 2016
|
| Schlagworte: | |
| Beschreibung: | 155 Seiten Illustrationen, Diagramme |
Internformat
MARC
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| 100 | 1 | |a Hekmat, Negar |d 1983- |e Verfasser |0 (DE-588)1037002571 |4 aut | |
| 245 | 1 | 0 | |a Investigation of GaAs-based THz devices utilizing intersubband transitions |c vorgelegt von Negar Hekmat |
| 264 | 1 | |a Bochum |c Wintersemester 2016 | |
| 300 | |a 155 Seiten |b Illustrationen, Diagramme | ||
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| 338 | |b nc |2 rdacarrier | ||
| 502 | |b Dissertation |c Ruhr-Universität Bochum |d 2016 | ||
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| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Kristallwachstum |0 (DE-588)4123579-4 |2 gnd |9 rswk-swf |
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| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
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Datensatz im Suchindex
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| author | Hekmat, Negar 1983- |
| author_GND | (DE-588)1037002571 |
| author_facet | Hekmat, Negar 1983- |
| author_role | aut |
| author_sort | Hekmat, Negar 1983- |
| author_variant | n h nh |
| building | Verbundindex |
| bvnumber | BV044732765 |
| ctrlnum | (DE-599)HBZHT019212073 |
| format | Thesis Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV044732765 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:00:40Z |
| institution | BVB |
| institution_GND | (DE-588)7409-3 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030128806 |
| open_access_boolean | |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | 155 Seiten Illustrationen, Diagramme |
| publishDate | 2016 |
| publishDateSearch | 2016 |
| publishDateSort | 2016 |
| record_format | marc |
| spelling | Hekmat, Negar 1983- Verfasser (DE-588)1037002571 aut Investigation of GaAs-based THz devices utilizing intersubband transitions vorgelegt von Negar Hekmat Bochum Wintersemester 2016 155 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Dissertation Ruhr-Universität Bochum 2016 Laser (DE-588)4034610-9 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Kristallwachstum (DE-588)4123579-4 gnd rswk-swf Festkörperphysik (DE-588)4016921-2 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Halbleiter (DE-588)4022993-2 s DE-604 Laser (DE-588)4034610-9 s Festkörperphysik (DE-588)4016921-2 s Molekularstrahlepitaxie (DE-588)4170399-6 s Kristallwachstum (DE-588)4123579-4 s Ruhr-Universität Bochum (DE-588)7409-3 dgg |
| spellingShingle | Hekmat, Negar 1983- Investigation of GaAs-based THz devices utilizing intersubband transitions Laser (DE-588)4034610-9 gnd Halbleiter (DE-588)4022993-2 gnd Kristallwachstum (DE-588)4123579-4 gnd Festkörperphysik (DE-588)4016921-2 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| subject_GND | (DE-588)4034610-9 (DE-588)4022993-2 (DE-588)4123579-4 (DE-588)4016921-2 (DE-588)4170399-6 (DE-588)4113937-9 |
| title | Investigation of GaAs-based THz devices utilizing intersubband transitions |
| title_auth | Investigation of GaAs-based THz devices utilizing intersubband transitions |
| title_exact_search | Investigation of GaAs-based THz devices utilizing intersubband transitions |
| title_full | Investigation of GaAs-based THz devices utilizing intersubband transitions vorgelegt von Negar Hekmat |
| title_fullStr | Investigation of GaAs-based THz devices utilizing intersubband transitions vorgelegt von Negar Hekmat |
| title_full_unstemmed | Investigation of GaAs-based THz devices utilizing intersubband transitions vorgelegt von Negar Hekmat |
| title_short | Investigation of GaAs-based THz devices utilizing intersubband transitions |
| title_sort | investigation of gaas based thz devices utilizing intersubband transitions |
| topic | Laser (DE-588)4034610-9 gnd Halbleiter (DE-588)4022993-2 gnd Kristallwachstum (DE-588)4123579-4 gnd Festkörperphysik (DE-588)4016921-2 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| topic_facet | Laser Halbleiter Kristallwachstum Festkörperphysik Molekularstrahlepitaxie Hochschulschrift |
| work_keys_str_mv | AT hekmatnegar investigationofgaasbasedthzdevicesutilizingintersubbandtransitions AT ruhruniversitatbochum investigationofgaasbasedthzdevicesutilizingintersubbandtransitions |