Transport, correlation, and structural defects:
Disordered materials offer new and unexpected insights into the structure of solids and the ways charge carriers move and interact with their environment. The first part of this review volume presents new results and ideas in the subject dealing with the local bonding structure in amorphous and vitr...
Gespeichert in:
Format: | Elektronisch E-Book |
---|---|
Sprache: | English |
Veröffentlicht: |
Singapore
World Scientific Pub. Co.
c1990
|
Schriftenreihe: | Advances in disordered semiconductors
vol. 3 |
Schlagworte: | |
Online-Zugang: | FHN01 URL des Erstveroeffentlichers |
Zusammenfassung: | Disordered materials offer new and unexpected insights into the structure of solids and the ways charge carriers move and interact with their environment. The first part of this review volume presents new results and ideas in the subject dealing with the local bonding structure in amorphous and vitreous semiconductors. These include the local bonding structure in chalcogenide glasses containing metal atoms, the interaction of local vibrational modes with their local bonding environment, and new models for the H-bonding configurations.The second part is devoted to questions of low temperature hopping transport and recombination of photocarriers in disordered semiconductors as a function of frequency and at high electric fields. The reviews by leading experts offer different insights and attempt to address problems from the various angles |
Beschreibung: | x, 305 p. ill |
ISBN: | 9789814368377 |
Internformat
MARC
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490 | 0 | |a Advances in disordered semiconductors |v vol. 3 | |
520 | |a Disordered materials offer new and unexpected insights into the structure of solids and the ways charge carriers move and interact with their environment. The first part of this review volume presents new results and ideas in the subject dealing with the local bonding structure in amorphous and vitreous semiconductors. These include the local bonding structure in chalcogenide glasses containing metal atoms, the interaction of local vibrational modes with their local bonding environment, and new models for the H-bonding configurations.The second part is devoted to questions of low temperature hopping transport and recombination of photocarriers in disordered semiconductors as a function of frequency and at high electric fields. The reviews by leading experts offer different insights and attempt to address problems from the various angles | ||
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format | Electronic eBook |
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id | DE-604.BV044638750 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T07:57:54Z |
institution | BVB |
isbn | 9789814368377 |
language | English |
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physical | x, 305 p. ill |
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publishDate | 1990 |
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publisher | World Scientific Pub. Co. |
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series2 | Advances in disordered semiconductors |
spelling | Transport, correlation, and structural defects edited by Hellmut Fritzsche Singapore World Scientific Pub. Co. c1990 x, 305 p. ill txt rdacontent c rdamedia cr rdacarrier Advances in disordered semiconductors vol. 3 Disordered materials offer new and unexpected insights into the structure of solids and the ways charge carriers move and interact with their environment. The first part of this review volume presents new results and ideas in the subject dealing with the local bonding structure in amorphous and vitreous semiconductors. These include the local bonding structure in chalcogenide glasses containing metal atoms, the interaction of local vibrational modes with their local bonding environment, and new models for the H-bonding configurations.The second part is devoted to questions of low temperature hopping transport and recombination of photocarriers in disordered semiconductors as a function of frequency and at high electric fields. The reviews by leading experts offer different insights and attempt to address problems from the various angles Semiconductors / Defects Order-disorder models Amorpher Halbleiter (DE-588)4001756-4 gnd rswk-swf Transportprozess (DE-588)4185932-7 gnd rswk-swf Amorpher Halbleiter (DE-588)4001756-4 s Transportprozess (DE-588)4185932-7 s 1\p DE-604 Fritzsche, Hellmut Sonstige oth Erscheint auch als Druck-Ausgabe 9789971509736 Erscheint auch als Druck-Ausgabe 9971509733 http://www.worldscientific.com/worldscibooks/10.1142/0912#t=toc Verlag URL des Erstveroeffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Transport, correlation, and structural defects Semiconductors / Defects Order-disorder models Amorpher Halbleiter (DE-588)4001756-4 gnd Transportprozess (DE-588)4185932-7 gnd |
subject_GND | (DE-588)4001756-4 (DE-588)4185932-7 |
title | Transport, correlation, and structural defects |
title_auth | Transport, correlation, and structural defects |
title_exact_search | Transport, correlation, and structural defects |
title_full | Transport, correlation, and structural defects edited by Hellmut Fritzsche |
title_fullStr | Transport, correlation, and structural defects edited by Hellmut Fritzsche |
title_full_unstemmed | Transport, correlation, and structural defects edited by Hellmut Fritzsche |
title_short | Transport, correlation, and structural defects |
title_sort | transport correlation and structural defects |
topic | Semiconductors / Defects Order-disorder models Amorpher Halbleiter (DE-588)4001756-4 gnd Transportprozess (DE-588)4185932-7 gnd |
topic_facet | Semiconductors / Defects Order-disorder models Amorpher Halbleiter Transportprozess |
url | http://www.worldscientific.com/worldscibooks/10.1142/0912#t=toc |
work_keys_str_mv | AT fritzschehellmut transportcorrelationandstructuraldefects |