Electromigration in ULSI interconnections:
Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on elect...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore
World Scientific Pub. Co.
c2010
|
| Schriftenreihe: | International series on advances in solid state electronics and technology
|
| Schlagworte: | |
| Online-Zugang: | FHN01 Volltext |
| Zusammenfassung: | Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed |
| Beschreibung: | xix, 291 p. ill. (some col.) |
| ISBN: | 9789814273336 |
Internformat
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| 520 | |a Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed | ||
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Datensatz im Suchindex
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| author | Tan, Cher Ming 1959- |
| author_facet | Tan, Cher Ming 1959- |
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| dewey-full | 621.3815284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
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| dewey-search | 621.3815284 |
| dewey-sort | 3621.3815284 |
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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| id | DE-604.BV044637716 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T07:57:51Z |
| institution | BVB |
| isbn | 9789814273336 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030035689 |
| oclc_num | 839016465 |
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| physical | xix, 291 p. ill. (some col.) |
| psigel | ZDB-124-WOP ZDB-124-WOP FHN_PDA_WOP |
| publishDate | 2010 |
| publishDateSearch | 2010 |
| publishDateSort | 2010 |
| publisher | World Scientific Pub. Co. |
| record_format | marc |
| series2 | International series on advances in solid state electronics and technology |
| spelling | Tan, Cher Ming 1959- Verfasser aut Electromigration in ULSI interconnections Cher Ming Tan Singapore World Scientific Pub. Co. c2010 xix, 291 p. ill. (some col.) txt rdacontent c rdamedia cr rdacarrier International series on advances in solid state electronics and technology Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed Integrated circuits / Ultra large scale integration Electrodiffusion Erscheint auch als Druck-Ausgabe 9789814273329 Erscheint auch als Druck-Ausgabe 9814273325 http://www.worldscientific.com/worldscibooks/10.1142/7294#t=toc Verlag URL des Erstveroeffentlichers Volltext |
| spellingShingle | Tan, Cher Ming 1959- Electromigration in ULSI interconnections Integrated circuits / Ultra large scale integration Electrodiffusion |
| title | Electromigration in ULSI interconnections |
| title_auth | Electromigration in ULSI interconnections |
| title_exact_search | Electromigration in ULSI interconnections |
| title_full | Electromigration in ULSI interconnections Cher Ming Tan |
| title_fullStr | Electromigration in ULSI interconnections Cher Ming Tan |
| title_full_unstemmed | Electromigration in ULSI interconnections Cher Ming Tan |
| title_short | Electromigration in ULSI interconnections |
| title_sort | electromigration in ulsi interconnections |
| topic | Integrated circuits / Ultra large scale integration Electrodiffusion |
| topic_facet | Integrated circuits / Ultra large scale integration Electrodiffusion |
| url | http://www.worldscientific.com/worldscibooks/10.1142/7294#t=toc |
| work_keys_str_mv | AT tancherming electromigrationinulsiinterconnections |