Topics in growth and device processing of III-V semiconductors:
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etch...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore
World Scientific Pub. Co.
c1996
|
| Schriftenreihe: | International series on advances in solid state electronics and technology
|
| Schlagworte: | |
| Online-Zugang: | FHN01 URL des Erstveroeffentlichers |
| Zusammenfassung: | This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems |
| Beschreibung: | xiii, 546 p. ill |
| ISBN: | 9789812831675 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV044636907 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 171120s1996 |||| o||u| ||||||eng d | ||
| 020 | |a 9789812831675 |9 978-981-283-167-5 | ||
| 024 | 7 | |a 10.1142/2471 |2 doi | |
| 035 | |a (ZDB-124-WOP)00004769 | ||
| 035 | |a (OCoLC)1012674813 | ||
| 035 | |a (DE-599)BVBBV044636907 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-92 | ||
| 082 | 0 | |a 621.38152 |2 22 | |
| 084 | |a UP 3100 |0 (DE-625)146372: |2 rvk | ||
| 100 | 1 | |a Pearton, S. J. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Topics in growth and device processing of III-V semiconductors |c S.J. Pearton & C.R. Abernathy, F. Ren |
| 264 | 1 | |a Singapore |b World Scientific Pub. Co. |c c1996 | |
| 300 | |a xiii, 546 p. |b ill | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a International series on advances in solid state electronics and technology | |
| 520 | |a This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems | ||
| 650 | 4 | |a Compound semiconductors | |
| 650 | 4 | |a Microelectronics / Materials | |
| 650 | 4 | |a Crystal growth | |
| 650 | 0 | 7 | |a Kristallwachstum |0 (DE-588)4123579-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOMBE |0 (DE-588)4338599-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |D s |
| 689 | 0 | 1 | |a MOMBE |0 (DE-588)4338599-0 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 689 | 1 | 0 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |D s |
| 689 | 1 | 1 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
| 689 | 1 | |8 2\p |5 DE-604 | |
| 689 | 2 | 0 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |D s |
| 689 | 2 | 1 | |a Kristallwachstum |0 (DE-588)4123579-4 |D s |
| 689 | 2 | |8 3\p |5 DE-604 | |
| 700 | 1 | |a Abernathy, C. R. |e Sonstige |4 oth | |
| 700 | 1 | |a Ren, F. |e Sonstige |4 oth | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |z 9789810218843 |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |z 9810218842 |
| 856 | 4 | 0 | |u http://www.worldscientific.com/worldscibooks/10.1142/2471#t=toc |x Verlag |z URL des Erstveroeffentlichers |3 Volltext |
| 912 | |a ZDB-124-WOP | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-030034880 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 3\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 966 | e | |u http://www.worldscientific.com/worldscibooks/10.1142/2471#t=toc |l FHN01 |p ZDB-124-WOP |q FHN_PDA_WOP |x Verlag |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804178051758555136 |
|---|---|
| any_adam_object | |
| author | Pearton, S. J. |
| author_facet | Pearton, S. J. |
| author_role | aut |
| author_sort | Pearton, S. J. |
| author_variant | s j p sj sjp |
| building | Verbundindex |
| bvnumber | BV044636907 |
| classification_rvk | UP 3100 |
| collection | ZDB-124-WOP |
| ctrlnum | (ZDB-124-WOP)00004769 (OCoLC)1012674813 (DE-599)BVBBV044636907 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03111nmm a2200637zc 4500</leader><controlfield tag="001">BV044636907</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">171120s1996 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789812831675</subfield><subfield code="9">978-981-283-167-5</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1142/2471</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-124-WOP)00004769</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1012674813</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV044636907</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-92</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.38152</subfield><subfield code="2">22</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3100</subfield><subfield code="0">(DE-625)146372:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Pearton, S. J.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Topics in growth and device processing of III-V semiconductors</subfield><subfield code="c">S.J. Pearton & C.R. Abernathy, F. Ren</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Singapore</subfield><subfield code="b">World Scientific Pub. Co.</subfield><subfield code="c">c1996</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">xiii, 546 p.</subfield><subfield code="b">ill</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">International series on advances in solid state electronics and technology</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Compound semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Microelectronics / Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Crystal growth</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Kristallwachstum</subfield><subfield code="0">(DE-588)4123579-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOMBE</subfield><subfield code="0">(DE-588)4338599-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">MOMBE</subfield><subfield code="0">(DE-588)4338599-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2="1"><subfield code="a">Kristallwachstum</subfield><subfield code="0">(DE-588)4123579-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="8">3\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Abernathy, C. R.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ren, F.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">9789810218843</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">9810218842</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.worldscientific.com/worldscibooks/10.1142/2471#t=toc</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveroeffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-124-WOP</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-030034880</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://www.worldscientific.com/worldscibooks/10.1142/2471#t=toc</subfield><subfield code="l">FHN01</subfield><subfield code="p">ZDB-124-WOP</subfield><subfield code="q">FHN_PDA_WOP</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV044636907 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:57:50Z |
| institution | BVB |
| isbn | 9789812831675 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030034880 |
| oclc_num | 1012674813 |
| open_access_boolean | |
| owner | DE-92 |
| owner_facet | DE-92 |
| physical | xiii, 546 p. ill |
| psigel | ZDB-124-WOP ZDB-124-WOP FHN_PDA_WOP |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| publisher | World Scientific Pub. Co. |
| record_format | marc |
| series2 | International series on advances in solid state electronics and technology |
| spelling | Pearton, S. J. Verfasser aut Topics in growth and device processing of III-V semiconductors S.J. Pearton & C.R. Abernathy, F. Ren Singapore World Scientific Pub. Co. c1996 xiii, 546 p. ill txt rdacontent c rdamedia cr rdacarrier International series on advances in solid state electronics and technology This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems Compound semiconductors Microelectronics / Materials Crystal growth Kristallwachstum (DE-588)4123579-4 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf MOMBE (DE-588)4338599-0 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 s MOMBE (DE-588)4338599-0 s 1\p DE-604 Halbleitertechnologie (DE-588)4158814-9 s 2\p DE-604 Kristallwachstum (DE-588)4123579-4 s 3\p DE-604 Abernathy, C. R. Sonstige oth Ren, F. Sonstige oth Erscheint auch als Druck-Ausgabe 9789810218843 Erscheint auch als Druck-Ausgabe 9810218842 http://www.worldscientific.com/worldscibooks/10.1142/2471#t=toc Verlag URL des Erstveroeffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Pearton, S. J. Topics in growth and device processing of III-V semiconductors Compound semiconductors Microelectronics / Materials Crystal growth Kristallwachstum (DE-588)4123579-4 gnd Halbleitertechnologie (DE-588)4158814-9 gnd MOMBE (DE-588)4338599-0 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| subject_GND | (DE-588)4123579-4 (DE-588)4158814-9 (DE-588)4338599-0 (DE-588)4150649-2 |
| title | Topics in growth and device processing of III-V semiconductors |
| title_auth | Topics in growth and device processing of III-V semiconductors |
| title_exact_search | Topics in growth and device processing of III-V semiconductors |
| title_full | Topics in growth and device processing of III-V semiconductors S.J. Pearton & C.R. Abernathy, F. Ren |
| title_fullStr | Topics in growth and device processing of III-V semiconductors S.J. Pearton & C.R. Abernathy, F. Ren |
| title_full_unstemmed | Topics in growth and device processing of III-V semiconductors S.J. Pearton & C.R. Abernathy, F. Ren |
| title_short | Topics in growth and device processing of III-V semiconductors |
| title_sort | topics in growth and device processing of iii v semiconductors |
| topic | Compound semiconductors Microelectronics / Materials Crystal growth Kristallwachstum (DE-588)4123579-4 gnd Halbleitertechnologie (DE-588)4158814-9 gnd MOMBE (DE-588)4338599-0 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| topic_facet | Compound semiconductors Microelectronics / Materials Crystal growth Kristallwachstum Halbleitertechnologie MOMBE Drei-Fünf-Halbleiter |
| url | http://www.worldscientific.com/worldscibooks/10.1142/2471#t=toc |
| work_keys_str_mv | AT peartonsj topicsingrowthanddeviceprocessingofiiivsemiconductors AT abernathycr topicsingrowthanddeviceprocessingofiiivsemiconductors AT renf topicsingrowthanddeviceprocessingofiiivsemiconductors |