The physics and modeling of MOSFETS: surface-potential model HiSIM
This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm M...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
New Jersey ; London ; Singapore ; Beijing ; Shanghai ; Hong Kong ; Taipei ; Chennai
World Scientific
[2008]
|
| Schriftenreihe: | International series on advances in solid state electronics and technology (ASSET)
|
| Schlagworte: | |
| Online-Zugang: | FHN01 Volltext |
| Zusammenfassung: | This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation |
| Beschreibung: | xxii, 352 Seiten Diagramme |
| ISBN: | 9812812059 9789812812056 9789814477574 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV044636248 | ||
| 003 | DE-604 | ||
| 005 | 20190128 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 171120s2008 |||| o||u| ||||||eng d | ||
| 020 | |a 9812812059 |c electronic bk. |9 981-281-205-9 | ||
| 020 | |a 9789812812056 |c electronic bk. |9 978-981-281-205-6 | ||
| 020 | |a 9789814477574 |c ebook |9 978-981-4477-57-4 | ||
| 024 | 7 | |a 10.1142/6159 |2 doi | |
| 035 | |a (ZDB-124-WOP)00000354 | ||
| 035 | |a (OCoLC)1012682384 | ||
| 035 | |a (DE-599)BVBBV044636248 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-92 |a DE-11 | ||
| 082 | 0 | |a 621.3815284 |2 22 | |
| 084 | |a ZN 4870 |0 (DE-625)157415: |2 rvk | ||
| 100 | 1 | |a Miura-Mattausch, Mitiko |d 1949- |e Verfasser |0 (DE-588)136793428 |4 aut | |
| 245 | 1 | 0 | |a The physics and modeling of MOSFETS |b surface-potential model HiSIM |c Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki (Hiroshima University, Japan) |
| 264 | 1 | |a New Jersey ; London ; Singapore ; Beijing ; Shanghai ; Hong Kong ; Taipei ; Chennai |b World Scientific |c [2008] | |
| 264 | 4 | |c © 2008 | |
| 300 | |a xxii, 352 Seiten |b Diagramme | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a International series on advances in solid state electronics and technology (ASSET) | |
| 520 | |a This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation | ||
| 650 | 4 | |a Metal oxide semiconductor field-effect transistors / Mathematical models | |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Simulation |0 (DE-588)4055072-2 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 0 | 1 | |a Simulation |0 (DE-588)4055072-2 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Mattausch, Hans Jurgen |e Sonstige |4 oth | |
| 700 | 1 | |a Ezaki, Tatsuya |e Sonstige |4 oth | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe, hardcover |z 978-981-256-864-9 |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe, softcover |z 978-981-3203-31-0 |
| 856 | 4 | 0 | |u http://www.worldscientific.com/worldscibooks/10.1142/6159#t=toc |x Verlag |z URL des Erstveroeffentlichers |3 Volltext |
| 912 | |a ZDB-124-WOP | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-030034218 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 966 | e | |u http://www.worldscientific.com/worldscibooks/10.1142/6159#t=toc |l FHN01 |p ZDB-124-WOP |q FHN_PDA_WOP |x Verlag |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804178050356609024 |
|---|---|
| any_adam_object | |
| author | Miura-Mattausch, Mitiko 1949- |
| author_GND | (DE-588)136793428 |
| author_facet | Miura-Mattausch, Mitiko 1949- |
| author_role | aut |
| author_sort | Miura-Mattausch, Mitiko 1949- |
| author_variant | m m m mmm |
| building | Verbundindex |
| bvnumber | BV044636248 |
| classification_rvk | ZN 4870 |
| collection | ZDB-124-WOP |
| ctrlnum | (ZDB-124-WOP)00000354 (OCoLC)1012682384 (DE-599)BVBBV044636248 |
| dewey-full | 621.3815284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815284 |
| dewey-search | 621.3815284 |
| dewey-sort | 3621.3815284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03022nmm a2200529zc 4500</leader><controlfield tag="001">BV044636248</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20190128 </controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">171120s2008 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812812059</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">981-281-205-9</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789812812056</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">978-981-281-205-6</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789814477574</subfield><subfield code="c">ebook</subfield><subfield code="9">978-981-4477-57-4</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1142/6159</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-124-WOP)00000354 </subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1012682384</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV044636248</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-92</subfield><subfield code="a">DE-11</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815284</subfield><subfield code="2">22</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4870</subfield><subfield code="0">(DE-625)157415:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Miura-Mattausch, Mitiko</subfield><subfield code="d">1949-</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)136793428</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">The physics and modeling of MOSFETS</subfield><subfield code="b">surface-potential model HiSIM</subfield><subfield code="c">Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki (Hiroshima University, Japan)</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New Jersey ; London ; Singapore ; Beijing ; Shanghai ; Hong Kong ; Taipei ; Chennai</subfield><subfield code="b">World Scientific</subfield><subfield code="c">[2008]</subfield></datafield><datafield tag="264" ind1=" " ind2="4"><subfield code="c">© 2008</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">xxii, 352 Seiten</subfield><subfield code="b">Diagramme</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">International series on advances in solid state electronics and technology (ASSET)</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductor field-effect transistors / Mathematical models</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Simulation</subfield><subfield code="0">(DE-588)4055072-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Simulation</subfield><subfield code="0">(DE-588)4055072-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mattausch, Hans Jurgen</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ezaki, Tatsuya</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe, hardcover</subfield><subfield code="z">978-981-256-864-9</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe, softcover</subfield><subfield code="z">978-981-3203-31-0</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.worldscientific.com/worldscibooks/10.1142/6159#t=toc</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveroeffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-124-WOP</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-030034218</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://www.worldscientific.com/worldscibooks/10.1142/6159#t=toc</subfield><subfield code="l">FHN01</subfield><subfield code="p">ZDB-124-WOP</subfield><subfield code="q">FHN_PDA_WOP</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV044636248 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:57:48Z |
| institution | BVB |
| isbn | 9812812059 9789812812056 9789814477574 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030034218 |
| oclc_num | 1012682384 |
| open_access_boolean | |
| owner | DE-92 DE-11 |
| owner_facet | DE-92 DE-11 |
| physical | xxii, 352 Seiten Diagramme |
| psigel | ZDB-124-WOP ZDB-124-WOP FHN_PDA_WOP |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | World Scientific |
| record_format | marc |
| series2 | International series on advances in solid state electronics and technology (ASSET) |
| spelling | Miura-Mattausch, Mitiko 1949- Verfasser (DE-588)136793428 aut The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki (Hiroshima University, Japan) New Jersey ; London ; Singapore ; Beijing ; Shanghai ; Hong Kong ; Taipei ; Chennai World Scientific [2008] © 2008 xxii, 352 Seiten Diagramme txt rdacontent c rdamedia cr rdacarrier International series on advances in solid state electronics and technology (ASSET) This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation Metal oxide semiconductor field-effect transistors / Mathematical models MOS-FET (DE-588)4207266-9 gnd rswk-swf Simulation (DE-588)4055072-2 gnd rswk-swf MOS-FET (DE-588)4207266-9 s Simulation (DE-588)4055072-2 s 1\p DE-604 Mattausch, Hans Jurgen Sonstige oth Ezaki, Tatsuya Sonstige oth Erscheint auch als Druck-Ausgabe, hardcover 978-981-256-864-9 Erscheint auch als Druck-Ausgabe, softcover 978-981-3203-31-0 http://www.worldscientific.com/worldscibooks/10.1142/6159#t=toc Verlag URL des Erstveroeffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Miura-Mattausch, Mitiko 1949- The physics and modeling of MOSFETS surface-potential model HiSIM Metal oxide semiconductor field-effect transistors / Mathematical models MOS-FET (DE-588)4207266-9 gnd Simulation (DE-588)4055072-2 gnd |
| subject_GND | (DE-588)4207266-9 (DE-588)4055072-2 |
| title | The physics and modeling of MOSFETS surface-potential model HiSIM |
| title_auth | The physics and modeling of MOSFETS surface-potential model HiSIM |
| title_exact_search | The physics and modeling of MOSFETS surface-potential model HiSIM |
| title_full | The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki (Hiroshima University, Japan) |
| title_fullStr | The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki (Hiroshima University, Japan) |
| title_full_unstemmed | The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki (Hiroshima University, Japan) |
| title_short | The physics and modeling of MOSFETS |
| title_sort | the physics and modeling of mosfets surface potential model hisim |
| title_sub | surface-potential model HiSIM |
| topic | Metal oxide semiconductor field-effect transistors / Mathematical models MOS-FET (DE-588)4207266-9 gnd Simulation (DE-588)4055072-2 gnd |
| topic_facet | Metal oxide semiconductor field-effect transistors / Mathematical models MOS-FET Simulation |
| url | http://www.worldscientific.com/worldscibooks/10.1142/6159#t=toc |
| work_keys_str_mv | AT miuramattauschmitiko thephysicsandmodelingofmosfetssurfacepotentialmodelhisim AT mattauschhansjurgen thephysicsandmodelingofmosfetssurfacepotentialmodelhisim AT ezakitatsuya thephysicsandmodelingofmosfetssurfacepotentialmodelhisim |