Breakdown phenomena in semiconductors and semiconductor devices:
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to pr...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore
World Scientific Pub. Co.
c2005
|
| Schriftenreihe: | Selected topics in electronics and systems
v. 36 |
| Schlagworte: | |
| Online-Zugang: | FHN01 Volltext |
| Zusammenfassung: | Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis |
| Beschreibung: | xiii, 208 p. ill |
| ISBN: | 9789812703330 |
Internformat
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| 520 | |a Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis | ||
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Datensatz im Suchindex
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| spelling | Levinshtein, M. E. Verfasser aut Breakdown phenomena in semiconductors and semiconductor devices Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein Singapore World Scientific Pub. Co. c2005 xiii, 208 p. ill txt rdacontent c rdamedia cr rdacarrier Selected topics in electronics and systems v. 36 Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis Semiconductors Breakdown (Electricity) High voltages Elektrischer Durchbruch (DE-588)4272300-0 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf 1\p (DE-588)4006432-3 Bibliografie gnd-content Halbleiterbauelement (DE-588)4113826-0 s Elektrischer Durchbruch (DE-588)4272300-0 s 2\p DE-604 Halbleiter (DE-588)4022993-2 s 3\p DE-604 Kostamovaara, Juha Sonstige oth Vainshtein, Sergey Sonstige oth Erscheint auch als Druck-Ausgabe 9789812563958 Erscheint auch als Druck-Ausgabe 9812563954 http://www.worldscientific.com/worldscibooks/10.1142/5877#t=toc Verlag URL des Erstveroeffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Levinshtein, M. E. Breakdown phenomena in semiconductors and semiconductor devices Semiconductors Breakdown (Electricity) High voltages Elektrischer Durchbruch (DE-588)4272300-0 gnd Halbleiter (DE-588)4022993-2 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| subject_GND | (DE-588)4272300-0 (DE-588)4022993-2 (DE-588)4113826-0 (DE-588)4006432-3 |
| title | Breakdown phenomena in semiconductors and semiconductor devices |
| title_auth | Breakdown phenomena in semiconductors and semiconductor devices |
| title_exact_search | Breakdown phenomena in semiconductors and semiconductor devices |
| title_full | Breakdown phenomena in semiconductors and semiconductor devices Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein |
| title_fullStr | Breakdown phenomena in semiconductors and semiconductor devices Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein |
| title_full_unstemmed | Breakdown phenomena in semiconductors and semiconductor devices Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein |
| title_short | Breakdown phenomena in semiconductors and semiconductor devices |
| title_sort | breakdown phenomena in semiconductors and semiconductor devices |
| topic | Semiconductors Breakdown (Electricity) High voltages Elektrischer Durchbruch (DE-588)4272300-0 gnd Halbleiter (DE-588)4022993-2 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| topic_facet | Semiconductors Breakdown (Electricity) High voltages Elektrischer Durchbruch Halbleiter Halbleiterbauelement Bibliografie |
| url | http://www.worldscientific.com/worldscibooks/10.1142/5877#t=toc |
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