Silicon RF power MOSFETS:
The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and ev...
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore
World Scientific Pub. Co.
c2005
|
| Schlagworte: | |
| Online-Zugang: | FHN01 Volltext |
| Zusammenfassung: | The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and even streaming video. The deployment of digital networks has required migration to multi-carrier RF power amplifiers with stringent demands on linearity and efficiency. This book describes the physics, design considerations and RF performance of silicon power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) that are at the heart of the power amplifiers. The recent invention and commercialization of RF power MOSFETs based on the super-linear mode of operation is described in this book for the first time. In addition to the analytical treatment of the physics, extensive description of transistor operation is provided by using the results of numerical simulations. Many novel power MOSFET structures are analyzed and their performance is compared with those of the laterally-diffused (LD) MOSFET that are currently used in 2G and 3G networks |
| Beschreibung: | xvi, 302 p. ill. (some col.) |
| ISBN: | 9789812569325 |
Internformat
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| 520 | |a The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and even streaming video. The deployment of digital networks has required migration to multi-carrier RF power amplifiers with stringent demands on linearity and efficiency. This book describes the physics, design considerations and RF performance of silicon power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) that are at the heart of the power amplifiers. The recent invention and commercialization of RF power MOSFETs based on the super-linear mode of operation is described in this book for the first time. In addition to the analytical treatment of the physics, extensive description of transistor operation is provided by using the results of numerical simulations. Many novel power MOSFET structures are analyzed and their performance is compared with those of the laterally-diffused (LD) MOSFET that are currently used in 2G and 3G networks | ||
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Datensatz im Suchindex
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| dewey-ones | 621 - Applied physics |
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| dewey-search | 621.3815/284 |
| dewey-sort | 3621.3815 3284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| id | DE-604.BV044634096 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T07:57:43Z |
| institution | BVB |
| isbn | 9789812569325 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030032068 |
| oclc_num | 1012665260 |
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| physical | xvi, 302 p. ill. (some col.) |
| psigel | ZDB-124-WOP ZDB-124-WOP FHN_PDA_WOP |
| publishDate | 2005 |
| publishDateSearch | 2005 |
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| publisher | World Scientific Pub. Co. |
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| spelling | Baliga, B. Jayant 1948- Verfasser aut Silicon RF power MOSFETS B. Jayant Baliga Singapore World Scientific Pub. Co. c2005 xvi, 302 p. ill. (some col.) txt rdacontent c rdamedia cr rdacarrier The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and even streaming video. The deployment of digital networks has required migration to multi-carrier RF power amplifiers with stringent demands on linearity and efficiency. This book describes the physics, design considerations and RF performance of silicon power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) that are at the heart of the power amplifiers. The recent invention and commercialization of RF power MOSFETs based on the super-linear mode of operation is described in this book for the first time. In addition to the analytical treatment of the physics, extensive description of transistor operation is provided by using the results of numerical simulations. Many novel power MOSFET structures are analyzed and their performance is compared with those of the laterally-diffused (LD) MOSFET that are currently used in 2G and 3G networks Metal oxide semiconductor field-effect transistors Erscheint auch als Druck-Ausgabe 9789812561213 Erscheint auch als Druck-Ausgabe 9812561218 http://www.worldscientific.com/worldscibooks/10.1142/5725#t=toc Verlag URL des Erstveroeffentlichers Volltext |
| spellingShingle | Baliga, B. Jayant 1948- Silicon RF power MOSFETS Metal oxide semiconductor field-effect transistors |
| title | Silicon RF power MOSFETS |
| title_auth | Silicon RF power MOSFETS |
| title_exact_search | Silicon RF power MOSFETS |
| title_full | Silicon RF power MOSFETS B. Jayant Baliga |
| title_fullStr | Silicon RF power MOSFETS B. Jayant Baliga |
| title_full_unstemmed | Silicon RF power MOSFETS B. Jayant Baliga |
| title_short | Silicon RF power MOSFETS |
| title_sort | silicon rf power mosfets |
| topic | Metal oxide semiconductor field-effect transistors |
| topic_facet | Metal oxide semiconductor field-effect transistors |
| url | http://www.worldscientific.com/worldscibooks/10.1142/5725#t=toc |
| work_keys_str_mv | AT baligabjayant siliconrfpowermosfets |