III-nitride devices nanoengineering:
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices. Written by...
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
London
Imperial College Press
c2008
|
| Schlagworte: | |
| Online-Zugang: | FHN01 Volltext |
| Zusammenfassung: | Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment. This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field |
| Beschreibung: | xiv, 462 p. col. ill |
| ISBN: | 9781848162242 |
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| id | DE-604.BV044633368 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:57:42Z |
| institution | BVB |
| isbn | 9781848162242 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030031339 |
| oclc_num | 1012653824 |
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| physical | xiv, 462 p. col. ill |
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| publishDate | 2008 |
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| publisher | Imperial College Press |
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| spelling | III-nitride devices nanoengineering Zhe Chuan Feng, editor London Imperial College Press c2008 xiv, 462 p. col. ill txt rdacontent c rdamedia cr rdacarrier Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment. This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field Semiconductors / Materials Gallium nitride Nanotechnology Feng, Zhe Chuan Sonstige oth http://www.worldscientific.com/worldscibooks/10.1142/P568#t=toc Verlag URL des Erstveroeffentlichers Volltext |
| spellingShingle | III-nitride devices nanoengineering Semiconductors / Materials Gallium nitride Nanotechnology |
| title | III-nitride devices nanoengineering |
| title_auth | III-nitride devices nanoengineering |
| title_exact_search | III-nitride devices nanoengineering |
| title_full | III-nitride devices nanoengineering Zhe Chuan Feng, editor |
| title_fullStr | III-nitride devices nanoengineering Zhe Chuan Feng, editor |
| title_full_unstemmed | III-nitride devices nanoengineering Zhe Chuan Feng, editor |
| title_short | III-nitride devices nanoengineering |
| title_sort | iii nitride devices nanoengineering |
| topic | Semiconductors / Materials Gallium nitride Nanotechnology |
| topic_facet | Semiconductors / Materials Gallium nitride Nanotechnology |
| url | http://www.worldscientific.com/worldscibooks/10.1142/P568#t=toc |
| work_keys_str_mv | AT fengzhechuan iiinitridedevicesnanoengineering |