ULSI Front-End Technology: covering from the first semiconductor paper to CMOS FINFET technology
"The main focus of this book is ULSI front-end technology. It covers from the early history of semiconductor science & technology from 1874 to state-of-the-art FINFET technology in 2016. Some ULSI back-end technology is also covered, for example, the science and technology of MIM capacitors...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New Jersey ; London ; Singapore ; Bejing ; Shanghai ; Hong Kong ; Taipei ; Chennai ; Tokyo
World Scientific
[2018]
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Zusammenfassung: | "The main focus of this book is ULSI front-end technology. It covers from the early history of semiconductor science & technology from 1874 to state-of-the-art FINFET technology in 2016. Some ULSI back-end technology is also covered, for example, the science and technology of MIM capacitors for analog CMOS has been included in this book."--Publisher's website |
| Beschreibung: | Includes bibliographical references and index |
| Beschreibung: | xi, 234 Seiten Diagramme |
| ISBN: | 9789813222151 |
Internformat
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Datensatz im Suchindex
| _version_ | 1804178035759382528 |
|---|---|
| adam_text | ULSI Front-End
Technology
Covering from the First Semiconductor
Paper to CMOS FINFET Technology
Subthreshotd
leakage path
W S Lau
World Scientific
NEW JERSEY • LONDON • SINGAPORE • BEIJING • SHANGHAI ■ HONGKONG • TAIPEI • CHENNAI - TOKYO
Contents
Preface ix
Author Biography xi
Chapter One Introduction to the History
of Semiconductors 1
1 1 Early History of Semiconductors 1
1 2 Invention of the p-n Junction 13
1 3 Invention of the Transistor 15
1 4 Invention of the Integrated Circuit 17
1 5 History of Semiconductor Physics 24
1 6 History of Semiconductor Crystal Growth
Technology 28
1 7 Semiconductor Science and Technology in the
21st Century 31
References 34
Chapter Two History of MOS Technology 45
2 1 History of the Invention of the MOS Transistor 45
2 2 Control of the Threshold Voltage and the Threshold
Adjust Implant 49
2 3 Invention of CMOS 51
2 4 Invention of the Silicon Gate Process 53
241 Migration from metal gate to silicon gate 53
242 Back to metal gate 58
v
vi VLSI Front-End Technology
2 5 Isolation Technology 60
2 6 Drain/Source Engineering 62
2 7 Well Engineering 66
2 8 Technology After MOS Transistor Formation 67
2 9 FinFET 70
2 10 Reliability 71
References 72
Chapter Three CMOS Switching Speed
Characterization and An
Overview Regarding How
to Speed Up CMOS 79
3 1 Introduction of Switching Speed 79
3 2 Measurement of Switching Speed 79
321 Method 1: Ring oscillator method 79
322 Method 2: Cascading many logic gates
together 81
3 3 Basic Theory Regarding How to Get Better
Switching Speed of CMOS 82
331 Increase drive current 82
332 Decrease parasitic capacitance 95
3 4 CMOS Technology Improvement by Mobility
Improvement of Silicon 96
341 Faster CMOS by operation at lower
temperature 98
342 Faster CMOS by changing device channel
direction or Si crystal orientation 104
343 Faster CMOS by applying mechanical stress
to silicon Ill
3 5 CMOS Technology Improvement by Reduction of
Parasitic Capacitance 116
351 Rront-end techniques used to reduce parasitic
capacitance 116
3511 Drain/source engineering 116
3512 Gate engineering and well/channel
engineering
117
Contents vii
3513 SOI technology 119
352 Back-end techniques used to reduce parasitic
capacitance 120
3 6 CMOS Technology Improvement by Using High-k
Dielectric and Metal Gate 124
3 7 CMOS Technology Improvement by Using 3-D Device
Structure Like FINFET 128
3 8 CMOS Technology Improvement by Using Materials
with Higher Mobility than Silicon 130
3 9 CMOS Technology Improvement by Reducing
Parasitic Resistance 136
3 10 BiCMOS Technology 138
References 138
Chapter Four Low Power CMOS Engineering 147
4 1 Introduction to Low-power CMOS Engineering 147
4 2 Power Dissipation in CMOS 149
4 3 Reduction of Dynamic Power Dissipation 150
4 4 Reduction of Static Power Dissipation 156
441 Reduction of junction leakage current 158
442 Reduction of subthreshold leakage current
(part one) 159
443 Reduction of GIDL 163
444 Reduction of subthreshold leakage current
(part two) 170
445 Reduction of gate leakage current by high-k
dielectric technology 175
446 Reduction of subthreshold leakage current by
UTB SOI technology 178
447 Reduction of subthreshold leakage current by
FINFET technology 178
448 Reduction of power dissipation by mechanical
switch technology 181
4 5 Control of the Spread of the Threshold Voltage 182
4 6 Conclusion of this Chapter 184
References 185
viii VLSI Pront-End Technology
Chapter Five Analog CMOS Technology 193
5 1 Low Frequency Analog CMOS 193
511 Significance of the Early voltage 193
512 Significance of transistor matching 200
5 2 High Frequency Analog CMOS 205
521 Low noise RF amplifier 205
522 Inductor design 207
5 3 Through Silicon Via 208
5 4 MIM Capacitors for Analog CMOS 209
5 5 Mixed Signal CMOS 226
References 226
|
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| id | DE-604.BV044628653 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:57:34Z |
| institution | BVB |
| isbn | 9789813222151 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030026737 |
| oclc_num | 1015880523 |
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| physical | xi, 234 Seiten Diagramme |
| publishDate | 2018 |
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| publisher | World Scientific |
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| spelling | Lau, W. S. aut ULSI Front-End Technology covering from the first semiconductor paper to CMOS FINFET technology W S Lau New Jersey ; London ; Singapore ; Bejing ; Shanghai ; Hong Kong ; Taipei ; Chennai ; Tokyo World Scientific [2018] © 2018 xi, 234 Seiten Diagramme txt rdacontent n rdamedia nc rdacarrier Includes bibliographical references and index "The main focus of this book is ULSI front-end technology. It covers from the early history of semiconductor science & technology from 1874 to state-of-the-art FINFET technology in 2016. Some ULSI back-end technology is also covered, for example, the science and technology of MIM capacitors for analog CMOS has been included in this book."--Publisher's website Integrated circuits / Ultra large scale integration Metal oxide semiconductors, Complementary Semiconductors / History ULSI (DE-588)4226286-0 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 s ULSI (DE-588)4226286-0 s Integrierte Schaltung (DE-588)4027242-4 s DE-604 HEBIS Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=030026737&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Lau, W. S. ULSI Front-End Technology covering from the first semiconductor paper to CMOS FINFET technology Integrated circuits / Ultra large scale integration Metal oxide semiconductors, Complementary Semiconductors / History ULSI (DE-588)4226286-0 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Integrierte Schaltung (DE-588)4027242-4 gnd |
| subject_GND | (DE-588)4226286-0 (DE-588)4158814-9 (DE-588)4027242-4 |
| title | ULSI Front-End Technology covering from the first semiconductor paper to CMOS FINFET technology |
| title_auth | ULSI Front-End Technology covering from the first semiconductor paper to CMOS FINFET technology |
| title_exact_search | ULSI Front-End Technology covering from the first semiconductor paper to CMOS FINFET technology |
| title_full | ULSI Front-End Technology covering from the first semiconductor paper to CMOS FINFET technology W S Lau |
| title_fullStr | ULSI Front-End Technology covering from the first semiconductor paper to CMOS FINFET technology W S Lau |
| title_full_unstemmed | ULSI Front-End Technology covering from the first semiconductor paper to CMOS FINFET technology W S Lau |
| title_short | ULSI Front-End Technology |
| title_sort | ulsi front end technology covering from the first semiconductor paper to cmos finfet technology |
| title_sub | covering from the first semiconductor paper to CMOS FINFET technology |
| topic | Integrated circuits / Ultra large scale integration Metal oxide semiconductors, Complementary Semiconductors / History ULSI (DE-588)4226286-0 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Integrierte Schaltung (DE-588)4027242-4 gnd |
| topic_facet | Integrated circuits / Ultra large scale integration Metal oxide semiconductors, Complementary Semiconductors / History ULSI Halbleitertechnologie Integrierte Schaltung |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=030026737&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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