Photolithography: basics of microstructuring
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| Format: | Buch |
| Sprache: | English |
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Ulm
MicroChemicals
2017
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| Ausgabe: | 1st Edition |
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| Online-Zugang: | Beschreibung für Marketing Inhaltsverzeichnis |
| Beschreibung: | 205 Seiten Illustrationen, Diagramme 24.9 cm x 17.2 cm, 700 g |
| ISBN: | 9783981878219 3981878213 |
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MARC
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| 100 | 1 | |a Rinke, Titus |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Photolithography |b basics of microstructuring |c Authors: Dr.-Ing. Christian Koch, Dr.-Ing. Titus Rinke |
| 250 | |a 1st Edition | ||
| 264 | 1 | |a Ulm |b MicroChemicals |c 2017 | |
| 300 | |a 205 Seiten |b Illustrationen, Diagramme |c 24.9 cm x 17.2 cm, 700 g | ||
| 336 | |b txt |2 rdacontent | ||
| 336 | |b sti |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 0 | 7 | |a Fotolithografie |0 (DE-588)4274823-9 |2 gnd |9 rswk-swf |
| 653 | |a Wissenschaftler, Techniker, Ingenieure und Mitarbeiter von Instituten, Startups, Fertigungseinrichtungen und Unternehmen die mit der Fotolithografie mikroelektronische, mikrooptische oder mikromechanische Komponenten herstellen. | ||
| 653 | |a Chemicals | ||
| 653 | |a Microstructuring | ||
| 653 | |a Photolithography | ||
| 653 | |a Photoresist | ||
| 689 | 0 | 0 | |a Fotolithografie |0 (DE-588)4274823-9 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Koch, Christian |e Verfasser |4 aut | |
| 710 | 2 | |a MicroChemicals GmbH |4 edt | |
| 775 | 0 | 8 | |i Parallele Sprachausgabe |z 9783981878202 |
| 856 | 4 | 2 | |m X:MVB |q text/html |u http://www.microchemicals.com/downloads/brochures.html |3 Beschreibung für Marketing |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=030026284&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-030026284 | ||
Datensatz im Suchindex
| _version_ | 1804178034972950528 |
|---|---|
| adam_text | CONTENT
WAFERS
1. PRODUCTION AND SPECIFICATIONS OF SILICON WAFERS 12
7.7
FROM QUARTZ TO HIGH-PURITY SILICON 12
1.2 CRYSTAL GROWTH USING THE CZOCHRALSKI METHOD 14
1.3 CRYSTAL GROWTH WITH THE FLOAT-ZONE METHOD
75
1.4 CRYSTALLOGRAPHY OF SILICON 16
1.5 SILICON WAFER PRODUCTION 19
1.6 SILICON WAFER SPECIFICATIONS 21
2. FURTHER PROCESSING OF SILICON WAFERS 24
2.1 THERMAL OXIDATION 24
2.2 PECVD O F SI0 2 25
2.3 DEPOSITION O F SILICON NITRIDE 25
2.4 METALLISATION 26
2.5 EPITAXY 27
2.6 SOI WAFERS 27
2.7 DICING O F WAFERS 28
3. PRODUCTION AND SPECIFICATIONS OF QUARTZ WAFERS 29
3.1 MANUFACTURE O F QUARTZ CRYSTALS 29
3.2 CRYSTALLOGRAPHY O F QUARTZ 29
3.3 PRODUCTION O F QUARTZ WAFERS 32
3.4 SPECIFICATIONS O F QUARTZ WAFERS 32
4. PRODUCTION AND SPECIFICATIONS OF FUSED QUARTZ WAFERS 33
4.1 PRODUCTION O F FUSED SILICA WAFERS 33
4.2 SPECIFICATIONS O F FUSED SILICA WAFERS 33
5. PRODUCTION AND SPECIFICATIONS OF GLASS WAFERS 34
5.1 BOROSILICATE GLASS AND ORDINARY GLASS IN COMPARISON 34
5.2 PRODUCTION O F GLASS WAFERS 34
5.3 GLASS WAFER SPECIFICATIONS 34
5.4 MATERIAL PROPERTIES O F QUARTZ, FUSED SILICA AND BOROSILICATE GLASS
35
PHOTORESIST PROCESSING
6. COMPOSITION AND PROPERTIES OF AZ AND TL PHOTORESISTS 38
6.1 THE RESIN 38
6.2 PHOTOCHEMISTRY 38
6.3 SOLVENTS 39
6.4 OTHER COMPONENTS: 40
6.5 THERMAL RESISTANCE 40
6.6 CHEMICAL RESISTANCE 41
6.7 DRY ETCHING STABILITY 41
6.8 OPTICAL ABSORPTION 42
6.9 VISCOSITY 42
7. STORAGE AND HANDLING OF PHOTORESISTS AND ANCILLARIES 43
7.7
EXPIRATION DATE 43
7.2 TEMPERATURE RANGES DURING STORAGE 43
7.3 LIGHTING CONDITIONS 44
7.4 REFILLING AND DILUTION O F PHOTORESISTS 46
7.5 AGEING O F PHOTORESISTS: EFFECTS 47
7.6 DEVELOPER: AGEING AND DEVELOPMENT RATE 48
7.7 AIR TEMPERATURE AND HUMIDITY DURING AND AFTER COATING 49
7.8 STORAGE O F EXPOSED SUBSTRATES 49
8. SUBSTRATE PREPARATION 50
8.1 CLEANING THE SUBSTRATE 50
8.2 USAGE O F ADHESION PROMOTERS 51
8.3 SPECIAL PROBLEMS REGARDING RESIST ADHESION 52
8.4 RESIST ADHESION AND CONTACT ANGLE MEASUREMENT 53
9. THE BEST-SUITED PHOTORESIST 54
9.1 WHICH RESIST MODE? 54
9.2 WHICH RESIST COATING TECHNIQUE? 54
9.3 PURPOSE O F THE PHOTO MASK? 55
9.4 RESOLUTION AND ASPECT RATIO 55
9.5 EXPOSURE 56
9.6 FILM THICKNESSES 56
10. SPIN-COATING 58
10.1 TECHNIQUES AND APPLICATION AREAS 58
10.2 INFLUENCE FACTORS O F THE RESIST FILM THICKNESS 58
10.3 THE EDGE BEAD AND ITS ELIMINATION OR REDUCTION 60
10.4 INHOMOGENEOUS RESIST FILM THICKNESS AND RESIST DEFECTS 61
10.5 PARTICLES OR AIR BUBBLES IN THE RESIST FILM? 61
10.6 MEASUREMENT O F THE RESIST FILM THICKNESS 63
10.7 ATTAINING THICK AND VERY THICK RESIST FILMS 63
11. SPRAY COATING 65
11.1 BASICS O F SPRAY COATING 65
11.2 ATOMISED SPRAY FORMATION 65
11.3 PROCESSES IN ATOMISED SPRAY 66
11.4 WETTING, EDGE COVERAGE AND ROUGHNESS O F THE RESIST FILM 67
11.5 SUITABLE SPRAY RESIST 68
12. DIP COATING 69
12.1 PRINCIPLE O F DIP COATING 69
12.2 REQUIREMENTS FO R THE EQUIPMENT 69
12.3 PHOTORESIST FO R DIP COATING 70
13. SOFTBAKE 71
13.1 PURPOSE O F THE SOFTBAKE 71
13.2 PROCESSES IN THE RESIST FILM: SOME PHYSICS 71
13.3 IMPACT O F SOFTBAKE PARAMETERS ON THE DEVELOPMENT O F POSITIVE
RESISTS 73
13.4 IMPACT O F SOFTBAKE PARAMETERS ON THE DEVELOPMENT O F NEGATIVE
RESISTS 74
13.5 OPTIMUM SOFTBAKE PARAMETERS 75
13.6 NON-IDEAL SOFTBAKE CONDITIONS 76
14. REHYDRATION 78
14.1 CHEMICAL AND PHYSICAL PROCESSES IN THE RESIST FILM 78
14.2 CONDITIONS FO R SUFFICIENT REHYDRATION 79
14.3 REHYDRATION O F THICK PHOTORESIST FILMS 80
15. ANTI-REFLECTIVE COATINGS 81
15.1 REFLECTION ON THE RESIST SURFACE AND TOP-LAYER ANTI REFLECTION
COATINGS 81
15.2 REFLECTION ON THE SUBSTRATE AND BOTTOM LAYER ANTI-REFLECTIVE
COATINGS 82
16. EXPOSURE 85
16.1 THE PHOTOREACTION 85
16.2 SPECTRAL SENSITIVITY OF PHOTORESISTS 86
16.3 EXPOSURE TECHNIQUES 86
16.4 SPECTRAL EMISSION O F TYPICAL EXPOSURE TOOLS 87
16.5 DETERMINATION O F OPTIMUM EXPOSURE DOSE AND EXPOSURE DURATION 87
16.6 THE BLEACHING O F DNQ-BASED POSITIVE RESISTS 88
16.7 THE CONTRAST O F PHOTORESISTS 91
16.8 WAVELENGTH AND MASK DISTANCE AS THE LOWER RESOLUTION LIMIT 92
16.9 DISRUPTIVE INFLUENCES O F PHOTO MASKS AND SUBSTRATES 93
16.10 LASER EXPOSURE 94
16.11 GREY-TONE LITHOGRAPHY 94
16.12 MATHEMATICAL FORMULATION O F EXPOSURE: ABSORPTION, CAUCHY AND DILL
95
16.13 NITROGEN FORMATION DURING EXPOSURE 96
16.14 NITROGEN FORMATION IN THERMAL PROCESSES AFTER EXPOSURE 98
17. POST EXPOSURE BAKE 99
17.1 CHEMICALLY AMPLIFIED POSITIVE RESISTS 99
17.2 IMAGE REVERSAL RESISTS AND CROSS-LINKING NEGATIVE RESISTS 99
17.3 POSITIVE RESISTS ON HIGHLY REFLECTIVE SUBSTRATES 100
18. DEVELOPMENT 101
18.1 BASIC CHEMISTRY O F DEVELOPERS 101
18.2 SELECTION CRITERIA O F DEVELOPERS 101
18.3 DEVELOPMENT: OPERATIONS IN THE PHOTORESIST ON A MOLECULAR LEVEL 103
18.4 DEVELOPER CONCENTRATION AND SELECTIVITY 103
18.5 TEMPERATURE DEPENDENCE O F THE DEVELOPMENT RATE 103
18.6 EXHAUSTION O F THE DEVELOPER THROUGH RESIST ENRICHMENT 104
18.7 EXPOSURE DOSE AND DEVELOPMENT RATE 105
18.8 SURFACE INHIBITION LAYER 105
19. HARDBAKE, REFLOW AND DUV HARDENING 106
19.1 HARDBAKE 106
19.2 REFLOW 108
19.3 DEEP UV HARDENING 109
20. IMAGE REVERSAL RESISTS AND THEIR PROCESSING 110
20.1 BASICS ON IMAGE REVERSAL RESISTS 110
20.2 THE FIRST EXPOSURE 110
20.3 THE IMAGE REVERSAL BAKE STEP 111
20.4 THE FLOOD EXPOSURE 112
20.5 DEVELOPMENT 112
20.6 IMAGE REVERSAL RESISTS OR NEGATIVE RESISTS? 113
20.7 SUITABLE REVERSAL RESISTS 113
21. PROCESSING OF AZ NEGATIVE RESISTS 114
21.1 EXPOSURE 114
21.2 POST EXPOSURE BAKE 114
21.3 DEVELOPING, LIFT-OFF AND STRIPPING 115
21.4 AREAS O F APPLICATION O F NEGATIVE RESIST 115
22. PHOTORESIST REMOVAL 117
22.1 SOLUBILITY OF PHOTORESIST FILMS 117
22.2 SOLVENTS AS REMOVERS 117
22.3 ALKALINE MEDIA AS REMOVERS 117
22.4 READY-TO-USE STRIPPERS 118
22.5 0 2 COMBUSTION 118
LITHOGRAPHY
23. SOLVENTS AND SOLUBILITIES 122
23.1 INTERACTIVE FORCES INVOLVED IN THE SOLUTION PROCESS 122
23.2 SOLUBILITIES: ENERGY AND ENTROPY 123
23.3 IM PORTANT CHARACTERISTICS O F ORGANIC SOLVENTS 124
24. WET CHEMICAL ETCHING - BASICS 126
24.1 ACIDS AND BASES: OXIDATION AND REDUCTION 126
24.2 CHEMICAL BUFFER 127
24.3 COMPLEXING AGENTS 127
24.4 PARTIAL STEPS IN ETCHING: OXIDATION, DISSOLUTION, DIFFUSION AND
CONVECTION 128
24.5 ETCHING OF METALS AND NOBLE METALS 128
24.6 FUNDAMENTAL PROBLEMS IN WET ETCHING 129
24.7 LARGE-SCALE RESIST PEELING 129
24.8 STABILITY OF AZ AND TL PHOTORESIST MASKS IN ETCHING MEDIA 130
25. WET-CHEMICAL ETCHING OF METALS 131
25.1 ETCHING O F ALUMINIUM 121
25.2 ETCHING O F CHROMIUM 132
25.3 ETCHING O F GOLD 132
25.4 COPPER ETCHING 133
25.5 NICKEL ETCHING 133
25.6 SILVER ETCHING 134
25.7 TITANIUM ETCHING 134
25.8 STANDARD CONCENTRATIONS 134
26. WET-CHEMICAL ETCHING OF SILICON AND SI02 135
26.1 ANISOTROPIC ETCHING O F SILICON 135
26.2 ISOTROPIC ETCHING O F SILICON WITH HF/HN03 137
26.3 ETCHING O F SI02WITH HF OR BHF 137
27. DRY ETCHING 138
27.1 BASIC ETCHING MECHANISMS AND PARAMETERS 138
27.2 PLASMA ETCHING O F SI AND SI02 139
27.3 PLASMA ETCHING O F CERTAIN METALS 140
27.4 PHOTORESIST PROCESSING REQUIREMENTS 140
27.5 MEASURES AGAINST THE THERMAL SOFTENING OF RESIST STRUCTURES 141
27.6 MEASURES AGAINST BUBBLE FORMATION IN THE RESIST LAYER DURING DRY
ETCHING 141
28. LIFT-OFF 142
28.1 BASIC PRINCIPLE 142
28.2 PHOTORESISTS FO R LIFT-OFF PROCESSES 142
28.3 THE DEPOSITION 143
28.4 THE LIFT-OFF 144
29. ION IMPLANTATION 145
29.1 BASICS 145
29.2 PHOTORESIST PROCESSING FO R ION IMPLANTATION 146
ELECTROPLATING
30. ELECTRO-CHEMICAL BASICS 150
30.1 THE METAL POTENTIAL 150
30.2 THE ELECTROPOTENTIAL SERIES 151
30.3 CHARGE EXCHANGE 152
30.4 THE GALVANIC CELL 153
30.5 ELECTROLYSIS 154
31. PROCESSES ON THE ELECTRODES 157
31.1 ION TRANSPORT BETWEEN ELECTROLYTE AND ELECTRODE 157
31.2 LAYER GROWTH 158
31.3 ELECTRODES 160
32. ELECTRO-CHEMICAL DEFINITIONS 161
32.1 NEUTRAL, IONISED AND DISSOLVED SUBSTANCES 161
32.2 ELECTROLYTES AND ELECTRODES 162
32.3 DEPOSITED METAL LAYER 163
33. ELECTRO-PLATING OF CERTAIN METALS 164
33.1 GOLD PLATING 164
33.2 NICKEL PLATING 165
33.3 TIN PLATING 166
33.4 COPPER PLATING 166
33.5 ELECTRO-PLATING DEPOSITION O F SILVER 166
34. PHOTORESIST PROCESSING IN THE MICRO-ELECTROPLATING 167
34.1 OPTIMALLY SUITABLE PHOTORESISTS 167
34.2 OPTIMISATION O F THE RESIST ADHESION 167
34.3 OPTIMISATION O F THE ADHESION O F THE DEPOSITED METAL 168
34.4 RESIST PROFILE 168
35. APPLICATION EXAMPLES 169
35.1 MICRO SWITCHES 169
35.2 MULTILAYER WIRING ON THIN FILMS. 171
TROUBLE-SHOOTING
36. STRANGE APPEARANCE OF THE PHOTO RESIST 174
36.1 DISCOLOURING? 174
36.2 UNCOATED SUBSTRATE AREAS AFTER RESIST COATING? 174
36.3 BUBBLES AND COMET-LIKE STRUCTURES AFTER SPIN COATING? 174
36.4 BUBBLES IN THE RESIST FILM AFTER THE SOFTBAKE? 175
36.5 ROUGH OR BUMPY RESIST SURFACE AFTER COATING? 175
37. RESIST COATING TECHNIQUES: COMMON PROBLEMS 175
37.1 SPIN COATING: EDGE BEAD? (FURTHER DETAILS IN SECTION 10.3 ON PAGE
60) 175
37.2 SPIN COATING: COMET-SHAPED STRUCTURES? 176
37.3 SPIN COATING: SUBSTRATE PARTIALLY UNCOATED AFTER SPIN-COATING? 176
37.4 SPRAY COATING: INFERIOR EDGE COVERAGE? 176
37.5 SPRAY COATING: ROUGH RESIST FILM 177
37.6 DIP COATING: INHOMOGENEOUS RESIST FILM THICKNESS? 177
37.7 ROLLER COATING: INHOMOGENEOUS RESIST FILM 177
37.8 SCREEN PRINTING: SUITED RESISTS 177
38. EXPOSURE TECHNIQUES: OCCASIONAL PROBLEMS 178
38.1 LASER SCRIBING 17$
38.2 LASER INTERFERENCE LITHOGRAPHY 178
38.3 EXPOSURE WAVELENGTHS BEYOND/BELOW THE STANDARD RESIST ABSORPTION
178
38.4 STICKING BETWEEN RESIST FILM AND MASK 179
39. DEVELOPMENT: INSUFFICIENT DEVELOPMENT RATE 179
39.1 SUFFICIENT REHYDRATION? 179
39.2 SUFFICIENT EXPOSURE DOSE IN THE CASE O F POSITIVE RESISTS? 179
39.3 COMPATIBLE DEVELOPER? 180
39.4 EXPIRED DEVELOPER? 180
39.5 DEVELOPER DILUTION TOO HIGH? 180
39.6 HMDS APPLIED CORRECTLY; CONTAMINATION BY OTHER SUBSTANCES? 180
39.7 THERMAL DECOMPOSITION O F PHOTO ACTIVE COMPOUND? 181
39.8 RESIST FILM THICKNESS HIGHER THAN EXPECTED? 181
39.9 CHANGED SUBSTRATE REFLECTIVITY? 181
39.10 NEGATIVE OR IMAGE REVERSAL RESISTS IN IMAGE REVERSAL MODE? 182
39.11 CHEMICALLY AMPLIFIED RESISTS? 182
40. DEVELOPMENT: DARK EROSION TOO HIGH 182
40.1 PROPER DEVELOPER DILUTION? 182
40.2 COMPATIBLE DEVELOPER? 182
40.3 OPTIMUM SOFTBAKE CONDITIONS? 182
40.4 DECOMPOSITION O F PHOTO ACTIVE COMPOUND DURING RESIST STORAGE? 183
40.5 IN CASE O F IMAGE REVERSAL- OR NEGATIVE RESISTS? 183
40.6 ACCIDENTAL EXPOSURE O F POSITIVE RESISTS? 183
40.7 SECOND DEVELOPMENT STEP? 184
41. INFERIOR RESIST ADHESION 184
41.1 OPTIMUM SUBSTRATE PRETREATMENT? 184
41.2 USING HF-CONTAINING ETCHANTS? 184
41.3 ON NOBLE METALS? 184
41.4 OPTIMUM SOFTBAKE PARAMETERS? 185
41.5 POSITIVE TONE RESISTS ON TRANSPARENT SUBSTRATES? 185
41.6 IMAGE REVERSAL- OR NEGATIVE TONE RESISTS? 185
41.7 DOUBLE-SIDED METALLIZED SUBSTRATES? 185
42. MINOR RESIST RESOLUTION 185
42.1 SUITABLE PHOTORESIST? 185
42.2 GAP BETWEEN PHOTOMASK AND RESIST SURFACE? 185
42.3 SUITED SOFTBAKE PARAMETERS? 185
42.4 COMPATIBLE AND SUFFICIENTLY DILUTED DEVELOPERS? 186
42.5 OPTIMUM EXPOSURE DOSE? 186
43. BUBBLES OR PARTICLES IN RESIST FILM AFTER COATING 186
43.1 RESIST BOTTLES MOVED? 186
43.2 RESIST BOTTLES CLOSED FO R A WHILE? 186
43.3 MANUAL RESIST DISPENSING? 187
43.4 SPRAY COATING? 187
43.5 EXPIRED RESIST? 187
43.6 DILUTED PHOTORESIST? 187
43.7 BUMPS IN THE RESIST FILM AFTER SPIN-COATING? 187
44. BUBBLES IN RESIST FILM AFTER EXPOSURE 187
44.1 SOFTBAKE SUFFICIENT? 187
44.2 SUFFICIENT RESIST ADHESION? 187
44.3 EXPOSURE INTENSITY TOO HIGH? 188
44.4 RESIST FILM THICKNESS TOO HIGH? 188
45. BUBBLES IN RESIST FILM AFTER THERMAL PROCESSES 188
45.1 AFTER BAKING STEPS O F EXPOSED PHOTORESIST? 188
45.2 AFTER COATING (SPUTTERING, EVAPORATION) OR DRY ETCHING? 188
46. WET ETCHING: COMMON PROBLEMS 188
46.1 RESIST ADHESION PROBLEMS? 188
46.2 UNDERETCHING? 188
46.3 INHOMOGENEOUS ETCH START? 188
46.4 INHOMOGENEOUS ETCH DEPTH DURING AL-ETCHING? 189
46.5 RESIST ATTACK IN HN03-CONTAINING ETCHANTS? 189
46.6 INFERIOR RESISTANCE AGAINST ALKALINE (KOH, NAOH, TMAH...)
SOLUTIONS? 189
47. DRY ETCHING: COMMON PROBLEMS 189
47.1 RESIST ROUNDING/FLOWING? 189
47.2 BUBBLING O F RESIST? 189
47.3 RESIST CAN NOT BE REMOVED AFTER DRY ETCHING? 189
48. ELECTRO-PLATING: COMMON PROBLEMS 189
48.1 INFERIOR RESIST STABILITY 189
48.2 BATH CONTAMINATION BY REMAINING SOLVENT? 190
48.3 UNDESIRED RESIST PROFILE 190
48.4 BAD ADHESION O F THE METAL STRUCTURES? 190
49. LIFT-OFF DOES NOT WORK (WELL) 191
49.1 OPTIMUM COATING TECHNIQUE? 191
49.2 SUITABLE PHOTORESIST FO R THE REQUIRED RESIST PROFILE? 191
49.3 RESIST SOFTENING AND ROUNDING DURING COATING? 191
49.4 SUITABLE LIFT-OFF MEDIUM? 191
50. SUBSTRATE ATTACK BY PHOTOCHEMICALS 191
50.1 DISCOLOURING/ATTACK BY THE PHOTORESIST? 191
50.2 ATTACK BY THE DEVELOPER? 192
50.3 ATTACK BY THE REMOVER? 192
51. PHOTORESIST REMOVAL DOES NOT WORK (WELL) 192
51.1 ORGANIC SOLVENTS AS REMOVER? 192
51.2 ALKALINE REMOVER? 192
51.3 HARDBAKE AT ELEVATED TEMPERATURES? 192
51.4 AFTER COATING (EVAPORATION, SPUTTERING, CVD)? 193
51.5 AFTER DRY ETCHING? 193
51.6 CROSSLINKED NEGATIVE RESISTS? 193
OUR PRODUCTS
52. OUR WAFERS 196
52.1 SILICON WAFERS 196
52.2 MONO-CRYSTALLINE QUARTZ WAFER 197
52.3 FUSED SILICA WAFERS 197
52.4 GLASS WAFERS 197
53. OUR PHOTO CHEMICALS 198
53.1 ADHESION PROMOTERS 198
53.2 ANTI REFLECTIVE COATINGS 198
53.3 POSITIVE RESISTS 198
53.4 NEGATIVE RESISTS 199
53.5 IMAGE REVERSAL RESISTS 200
53.6 SPRAYING AND DIPPING RESISTS 200
53.7 DEVELOPERS 201
53.8 REMOVERS 201
54. OUR SOLVENTS, ETCHANTS AND AUXILIARY MATERIAL 201
54.1 ORGANIC SOLVENTS 201
54.2 ACIDS, BASES AND OXIDISING AGENTS 202
54.3 ETCHING MIXTURES 203
55. OUR ELECTROLYTES AND ACCESSORIES FOR ELECTROPLATING 203
55.1 ELECTROLYTES 203
55.2 ANODES AND EQUIPMENT 204
56. LITHOPROTECT YELLOW LIGHT PRODUCTS 205
56.1 LITHOPROTECT PROPERTIES 205
56.2 LITHOPROTECT APPLICATION AREAS 205
56.3 SALES UNITS AND DIMENSIONS O F THE LITHOPROTECT PRODUCTS 205
|
| any_adam_object | 1 |
| author | Rinke, Titus Koch, Christian |
| author_corporate | MicroChemicals GmbH |
| author_corporate_role | edt |
| author_facet | Rinke, Titus Koch, Christian MicroChemicals GmbH |
| author_role | aut aut |
| author_sort | Rinke, Titus |
| author_variant | t r tr c k ck |
| building | Verbundindex |
| bvnumber | BV044628194 |
| classification_rvk | ZN 4170 |
| ctrlnum | (OCoLC)1012336869 (DE-599)DNB1138126543 |
| dewey-full | 621.3 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3 |
| dewey-search | 621.3 |
| dewey-sort | 3621.3 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 1st Edition |
| format | Book |
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| id | DE-604.BV044628194 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T07:57:34Z |
| institution | BVB |
| isbn | 9783981878219 3981878213 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030026284 |
| oclc_num | 1012336869 |
| open_access_boolean | |
| owner | DE-523 |
| owner_facet | DE-523 |
| physical | 205 Seiten Illustrationen, Diagramme 24.9 cm x 17.2 cm, 700 g |
| publishDate | 2017 |
| publishDateSearch | 2017 |
| publishDateSort | 2017 |
| publisher | MicroChemicals |
| record_format | marc |
| spelling | Rinke, Titus Verfasser aut Photolithography basics of microstructuring Authors: Dr.-Ing. Christian Koch, Dr.-Ing. Titus Rinke 1st Edition Ulm MicroChemicals 2017 205 Seiten Illustrationen, Diagramme 24.9 cm x 17.2 cm, 700 g txt rdacontent sti rdacontent n rdamedia nc rdacarrier Fotolithografie (DE-588)4274823-9 gnd rswk-swf Wissenschaftler, Techniker, Ingenieure und Mitarbeiter von Instituten, Startups, Fertigungseinrichtungen und Unternehmen die mit der Fotolithografie mikroelektronische, mikrooptische oder mikromechanische Komponenten herstellen. Chemicals Microstructuring Photolithography Photoresist Fotolithografie (DE-588)4274823-9 s DE-604 Koch, Christian Verfasser aut MicroChemicals GmbH edt Parallele Sprachausgabe 9783981878202 X:MVB text/html http://www.microchemicals.com/downloads/brochures.html Beschreibung für Marketing DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=030026284&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Rinke, Titus Koch, Christian Photolithography basics of microstructuring Fotolithografie (DE-588)4274823-9 gnd |
| subject_GND | (DE-588)4274823-9 |
| title | Photolithography basics of microstructuring |
| title_auth | Photolithography basics of microstructuring |
| title_exact_search | Photolithography basics of microstructuring |
| title_full | Photolithography basics of microstructuring Authors: Dr.-Ing. Christian Koch, Dr.-Ing. Titus Rinke |
| title_fullStr | Photolithography basics of microstructuring Authors: Dr.-Ing. Christian Koch, Dr.-Ing. Titus Rinke |
| title_full_unstemmed | Photolithography basics of microstructuring Authors: Dr.-Ing. Christian Koch, Dr.-Ing. Titus Rinke |
| title_short | Photolithography |
| title_sort | photolithography basics of microstructuring |
| title_sub | basics of microstructuring |
| topic | Fotolithografie (DE-588)4274823-9 gnd |
| topic_facet | Fotolithografie |
| url | http://www.microchemicals.com/downloads/brochures.html http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=030026284&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT rinketitus photolithographybasicsofmicrostructuring AT kochchristian photolithographybasicsofmicrostructuring AT microchemicalsgmbh photolithographybasicsofmicrostructuring |