Resistive switching: from fundamentals of nanoionic redox processes to memristive device applications
Gespeichert in:
| Weitere Verfasser: | , , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Weinheim an der Bergstrasse, Germany
Wiley-VCH
2016
|
| Schlagworte: | |
| Beschreibung: | Description based on online resource; title from PDF title page (ebrary, viewed January 15, 2015) |
| Beschreibung: | 1 online resource (954 pages) illustrations (some color) |
| ISBN: | 9783527680931 |
Internformat
MARC
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| 020 | |a 9783527680931 |c ebook |9 978-3-527-68093-1 | ||
| 035 | |a (ZDB-30-PAD)EBC4305742 | ||
| 035 | |a (ZDB-89-EBL)EBL4305742 | ||
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| 245 | 1 | 0 | |a Resistive switching |b from fundamentals of nanoionic redox processes to memristive device applications |c edited by Daniele Ielmini and Rainer Waser ; contributors, Hiro Akinaga [and sixty-four others] |
| 264 | 1 | |a Weinheim an der Bergstrasse, Germany |b Wiley-VCH |c 2016 | |
| 264 | 4 | |c © 2016 | |
| 300 | |a 1 online resource (954 pages) |b illustrations (some color) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a Description based on online resource; title from PDF title page (ebrary, viewed January 15, 2015) | ||
| 650 | 4 | |a Nanoelectronics | |
| 650 | 4 | |a Memristors | |
| 650 | 0 | 7 | |a Schaltelement |0 (DE-588)4179377-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Resistives Schalten |0 (DE-588)1072012936 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a RAM |0 (DE-588)4176909-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Memory-Effekt |0 (DE-588)4155018-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Nichtflüchtiger Speicher |0 (DE-588)4728810-3 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Resistives Schalten |0 (DE-588)1072012936 |D s |
| 689 | 0 | 1 | |a RAM |0 (DE-588)4176909-0 |D s |
| 689 | 0 | 2 | |a Nichtflüchtiger Speicher |0 (DE-588)4728810-3 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 689 | 1 | 0 | |a Schaltelement |0 (DE-588)4179377-8 |D s |
| 689 | 1 | 1 | |a Memory-Effekt |0 (DE-588)4155018-3 |D s |
| 689 | 1 | |8 2\p |5 DE-604 | |
| 700 | 1 | |a Ielmini, Daniele |d 1970- |0 (DE-588)1101469609 |4 edt | |
| 700 | 1 | |a Waser, Rainer |d 1955- |0 (DE-588)113442491 |4 edt | |
| 700 | 1 | |a Akinaga, Hiro |4 ctb | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |t Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications |d Weinheim an der Bergstrasse, Germany : Wiley-VCH, c2016 |h 954 pages |z 9783527334179 |
| 912 | |a ZDB-30-PAD | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-029971379 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804177954203238400 |
|---|---|
| any_adam_object | |
| author2 | Ielmini, Daniele 1970- Waser, Rainer 1955- Akinaga, Hiro |
| author2_role | edt edt ctb |
| author2_variant | d i di r w rw h a ha |
| author_GND | (DE-588)1101469609 (DE-588)113442491 |
| author_facet | Ielmini, Daniele 1970- Waser, Rainer 1955- Akinaga, Hiro |
| building | Verbundindex |
| bvnumber | BV044572858 |
| classification_rvk | ZN 4900 ZN 5370 |
| collection | ZDB-30-PAD |
| ctrlnum | (ZDB-30-PAD)EBC4305742 (ZDB-89-EBL)EBL4305742 (ZDB-38-EBR)ebr11137224 (OCoLC)935254588 (DE-599)BVBBV044572858 |
| dewey-full | 621.381 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381 |
| dewey-search | 621.381 |
| dewey-sort | 3621.381 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| id | DE-604.BV044572858 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T07:56:17Z |
| institution | BVB |
| isbn | 9783527680931 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029971379 |
| oclc_num | 935254588 |
| open_access_boolean | |
| physical | 1 online resource (954 pages) illustrations (some color) |
| psigel | ZDB-30-PAD |
| publishDate | 2016 |
| publishDateSearch | 2016 |
| publishDateSort | 2016 |
| publisher | Wiley-VCH |
| record_format | marc |
| spelling | Resistive switching from fundamentals of nanoionic redox processes to memristive device applications edited by Daniele Ielmini and Rainer Waser ; contributors, Hiro Akinaga [and sixty-four others] Weinheim an der Bergstrasse, Germany Wiley-VCH 2016 © 2016 1 online resource (954 pages) illustrations (some color) txt rdacontent c rdamedia cr rdacarrier Description based on online resource; title from PDF title page (ebrary, viewed January 15, 2015) Nanoelectronics Memristors Schaltelement (DE-588)4179377-8 gnd rswk-swf Resistives Schalten (DE-588)1072012936 gnd rswk-swf RAM (DE-588)4176909-0 gnd rswk-swf Memory-Effekt (DE-588)4155018-3 gnd rswk-swf Nichtflüchtiger Speicher (DE-588)4728810-3 gnd rswk-swf Resistives Schalten (DE-588)1072012936 s RAM (DE-588)4176909-0 s Nichtflüchtiger Speicher (DE-588)4728810-3 s 1\p DE-604 Schaltelement (DE-588)4179377-8 s Memory-Effekt (DE-588)4155018-3 s 2\p DE-604 Ielmini, Daniele 1970- (DE-588)1101469609 edt Waser, Rainer 1955- (DE-588)113442491 edt Akinaga, Hiro ctb Erscheint auch als Druck-Ausgabe Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications Weinheim an der Bergstrasse, Germany : Wiley-VCH, c2016 954 pages 9783527334179 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Resistive switching from fundamentals of nanoionic redox processes to memristive device applications Nanoelectronics Memristors Schaltelement (DE-588)4179377-8 gnd Resistives Schalten (DE-588)1072012936 gnd RAM (DE-588)4176909-0 gnd Memory-Effekt (DE-588)4155018-3 gnd Nichtflüchtiger Speicher (DE-588)4728810-3 gnd |
| subject_GND | (DE-588)4179377-8 (DE-588)1072012936 (DE-588)4176909-0 (DE-588)4155018-3 (DE-588)4728810-3 |
| title | Resistive switching from fundamentals of nanoionic redox processes to memristive device applications |
| title_auth | Resistive switching from fundamentals of nanoionic redox processes to memristive device applications |
| title_exact_search | Resistive switching from fundamentals of nanoionic redox processes to memristive device applications |
| title_full | Resistive switching from fundamentals of nanoionic redox processes to memristive device applications edited by Daniele Ielmini and Rainer Waser ; contributors, Hiro Akinaga [and sixty-four others] |
| title_fullStr | Resistive switching from fundamentals of nanoionic redox processes to memristive device applications edited by Daniele Ielmini and Rainer Waser ; contributors, Hiro Akinaga [and sixty-four others] |
| title_full_unstemmed | Resistive switching from fundamentals of nanoionic redox processes to memristive device applications edited by Daniele Ielmini and Rainer Waser ; contributors, Hiro Akinaga [and sixty-four others] |
| title_short | Resistive switching |
| title_sort | resistive switching from fundamentals of nanoionic redox processes to memristive device applications |
| title_sub | from fundamentals of nanoionic redox processes to memristive device applications |
| topic | Nanoelectronics Memristors Schaltelement (DE-588)4179377-8 gnd Resistives Schalten (DE-588)1072012936 gnd RAM (DE-588)4176909-0 gnd Memory-Effekt (DE-588)4155018-3 gnd Nichtflüchtiger Speicher (DE-588)4728810-3 gnd |
| topic_facet | Nanoelectronics Memristors Schaltelement Resistives Schalten RAM Memory-Effekt Nichtflüchtiger Speicher |
| work_keys_str_mv | AT ielminidaniele resistiveswitchingfromfundamentalsofnanoionicredoxprocessestomemristivedeviceapplications AT waserrainer resistiveswitchingfromfundamentalsofnanoionicredoxprocessestomemristivedeviceapplications AT akinagahiro resistiveswitchingfromfundamentalsofnanoionicredoxprocessestomemristivedeviceapplications |