Silicon-On-Insulator (SOI) Technology: Manufacture and Applications
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Burlington
Elsevier Science
2014
|
| Schriftenreihe: | Woodhead Publishing series in electronic and optical materials
|
| Schlagworte: | |
| Online-Zugang: | FAW01 Volltext |
| Beschreibung: | 6:Silicon-on-insulator (SOI) junctionless transistors Silicon-on-insulator (SOI) is a semiconductor wafer technology that produces higher performing, lower power devices than traditional bulk silicon techniques. SOI works by placing a thin, insulating layer, such as silicon oxide between a thin layer of silicon and the silicon substrate. This process helps reduce junction capacitance, resulting in higher speed and lower power consumption. SOI chips can be as much as 15 percent faster and use 20 percent less power than today's silicon complementary metal-oxide semiconductor (CMOS)-based chips. Part one covers SOI transistors and circuits, manufact |
| Beschreibung: | 503 pages |
| ISBN: | 9780857099259 0857099256 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV044388674 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 170630s2014 |||| o||u| ||||||eng d | ||
| 020 | |a 9780857099259 |9 978-0-85709-925-9 | ||
| 020 | |a 0857099256 |9 0-85709-925-6 | ||
| 035 | |a (ZDB-33-ESD)ocn881887848 | ||
| 035 | |a (OCoLC)881887848 | ||
| 035 | |a (DE-599)BVBBV044388674 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-1046 | ||
| 082 | 0 | |a 621.381 |2 22 | |
| 100 | 1 | |a Kononchuk, O. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Silicon-On-Insulator (SOI) Technology |b Manufacture and Applications |
| 264 | 1 | |a Burlington |b Elsevier Science |c 2014 | |
| 300 | |a 503 pages | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a Woodhead Publishing series in electronic and optical materials | |
| 500 | |a 6:Silicon-on-insulator (SOI) junctionless transistors | ||
| 500 | |a Silicon-on-insulator (SOI) is a semiconductor wafer technology that produces higher performing, lower power devices than traditional bulk silicon techniques. SOI works by placing a thin, insulating layer, such as silicon oxide between a thin layer of silicon and the silicon substrate. This process helps reduce junction capacitance, resulting in higher speed and lower power consumption. SOI chips can be as much as 15 percent faster and use 20 percent less power than today's silicon complementary metal-oxide semiconductor (CMOS)-based chips. Part one covers SOI transistors and circuits, manufact | ||
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Mechanical |2 bisacsh | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 650 | 7 | |a Silicon |2 fast | |
| 650 | 7 | |a Silicon-on-insulator technology |2 fast | |
| 650 | 4 | |a Semiconductors |v Congresses | |
| 650 | 4 | |a Silicon |v Congresses | |
| 650 | 4 | |a Silicon-on-insulator technology |v Congresses | |
| 650 | 0 | 7 | |a CMOS |0 (DE-588)4010319-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a SOI-Technik |0 (DE-588)4128029-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleitersubstrat |0 (DE-588)4158813-7 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |2 gnd-content | |
| 689 | 0 | 0 | |a SOI-Technik |0 (DE-588)4128029-5 |D s |
| 689 | 0 | 1 | |a Halbleitersubstrat |0 (DE-588)4158813-7 |D s |
| 689 | 0 | 2 | |a CMOS |0 (DE-588)4010319-5 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Nguyen, B.-Y. |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u http://www.sciencedirect.com/science/book/9780857095268 |x Verlag |z URL des Erstveröffentlichers |3 Volltext |
| 912 | |a ZDB-33-ESD |a ZDB-33-EBS | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-029790896 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 966 | e | |u http://www.sciencedirect.com/science/book/9780857095268 |l FAW01 |p ZDB-33-ESD |q FAW_PDA_ESD |x Verlag |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804177659062648832 |
|---|---|
| any_adam_object | |
| author | Kononchuk, O. |
| author_facet | Kononchuk, O. |
| author_role | aut |
| author_sort | Kononchuk, O. |
| author_variant | o k ok |
| building | Verbundindex |
| bvnumber | BV044388674 |
| collection | ZDB-33-ESD ZDB-33-EBS |
| ctrlnum | (ZDB-33-ESD)ocn881887848 (OCoLC)881887848 (DE-599)BVBBV044388674 |
| dewey-full | 621.381 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381 |
| dewey-search | 621.381 |
| dewey-sort | 3621.381 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02771nmm a2200565zc 4500</leader><controlfield tag="001">BV044388674</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">170630s2014 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780857099259</subfield><subfield code="9">978-0-85709-925-9</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0857099256</subfield><subfield code="9">0-85709-925-6</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-33-ESD)ocn881887848</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)881887848</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV044388674</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1046</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381</subfield><subfield code="2">22</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Kononchuk, O.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Silicon-On-Insulator (SOI) Technology</subfield><subfield code="b">Manufacture and Applications</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Burlington</subfield><subfield code="b">Elsevier Science</subfield><subfield code="c">2014</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">503 pages</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Woodhead Publishing series in electronic and optical materials</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">6:Silicon-on-insulator (SOI) junctionless transistors</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Silicon-on-insulator (SOI) is a semiconductor wafer technology that produces higher performing, lower power devices than traditional bulk silicon techniques. SOI works by placing a thin, insulating layer, such as silicon oxide between a thin layer of silicon and the silicon substrate. This process helps reduce junction capacitance, resulting in higher speed and lower power consumption. SOI chips can be as much as 15 percent faster and use 20 percent less power than today's silicon complementary metal-oxide semiconductor (CMOS)-based chips. Part one covers SOI transistors and circuits, manufact</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Mechanical</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon-on-insulator technology</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon-on-insulator technology</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">CMOS</subfield><subfield code="0">(DE-588)4010319-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">SOI-Technik</subfield><subfield code="0">(DE-588)4128029-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitersubstrat</subfield><subfield code="0">(DE-588)4158813-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">SOI-Technik</subfield><subfield code="0">(DE-588)4128029-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Halbleitersubstrat</subfield><subfield code="0">(DE-588)4158813-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">CMOS</subfield><subfield code="0">(DE-588)4010319-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nguyen, B.-Y.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.sciencedirect.com/science/book/9780857095268</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveröffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-33-ESD</subfield><subfield code="a">ZDB-33-EBS</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-029790896</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://www.sciencedirect.com/science/book/9780857095268</subfield><subfield code="l">FAW01</subfield><subfield code="p">ZDB-33-ESD</subfield><subfield code="q">FAW_PDA_ESD</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift gnd-content |
| genre_facet | Konferenzschrift |
| id | DE-604.BV044388674 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:51:35Z |
| institution | BVB |
| isbn | 9780857099259 0857099256 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029790896 |
| oclc_num | 881887848 |
| open_access_boolean | |
| owner | DE-1046 |
| owner_facet | DE-1046 |
| physical | 503 pages |
| psigel | ZDB-33-ESD ZDB-33-EBS ZDB-33-ESD FAW_PDA_ESD |
| publishDate | 2014 |
| publishDateSearch | 2014 |
| publishDateSort | 2014 |
| publisher | Elsevier Science |
| record_format | marc |
| series2 | Woodhead Publishing series in electronic and optical materials |
| spelling | Kononchuk, O. Verfasser aut Silicon-On-Insulator (SOI) Technology Manufacture and Applications Burlington Elsevier Science 2014 503 pages txt rdacontent c rdamedia cr rdacarrier Woodhead Publishing series in electronic and optical materials 6:Silicon-on-insulator (SOI) junctionless transistors Silicon-on-insulator (SOI) is a semiconductor wafer technology that produces higher performing, lower power devices than traditional bulk silicon techniques. SOI works by placing a thin, insulating layer, such as silicon oxide between a thin layer of silicon and the silicon substrate. This process helps reduce junction capacitance, resulting in higher speed and lower power consumption. SOI chips can be as much as 15 percent faster and use 20 percent less power than today's silicon complementary metal-oxide semiconductor (CMOS)-based chips. Part one covers SOI transistors and circuits, manufact TECHNOLOGY & ENGINEERING / Mechanical bisacsh Semiconductors fast Silicon fast Silicon-on-insulator technology fast Semiconductors Congresses Silicon Congresses Silicon-on-insulator technology Congresses CMOS (DE-588)4010319-5 gnd rswk-swf SOI-Technik (DE-588)4128029-5 gnd rswk-swf Halbleitersubstrat (DE-588)4158813-7 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content SOI-Technik (DE-588)4128029-5 s Halbleitersubstrat (DE-588)4158813-7 s CMOS (DE-588)4010319-5 s 1\p DE-604 Nguyen, B.-Y. Sonstige oth http://www.sciencedirect.com/science/book/9780857095268 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Kononchuk, O. Silicon-On-Insulator (SOI) Technology Manufacture and Applications TECHNOLOGY & ENGINEERING / Mechanical bisacsh Semiconductors fast Silicon fast Silicon-on-insulator technology fast Semiconductors Congresses Silicon Congresses Silicon-on-insulator technology Congresses CMOS (DE-588)4010319-5 gnd SOI-Technik (DE-588)4128029-5 gnd Halbleitersubstrat (DE-588)4158813-7 gnd |
| subject_GND | (DE-588)4010319-5 (DE-588)4128029-5 (DE-588)4158813-7 (DE-588)1071861417 |
| title | Silicon-On-Insulator (SOI) Technology Manufacture and Applications |
| title_auth | Silicon-On-Insulator (SOI) Technology Manufacture and Applications |
| title_exact_search | Silicon-On-Insulator (SOI) Technology Manufacture and Applications |
| title_full | Silicon-On-Insulator (SOI) Technology Manufacture and Applications |
| title_fullStr | Silicon-On-Insulator (SOI) Technology Manufacture and Applications |
| title_full_unstemmed | Silicon-On-Insulator (SOI) Technology Manufacture and Applications |
| title_short | Silicon-On-Insulator (SOI) Technology |
| title_sort | silicon on insulator soi technology manufacture and applications |
| title_sub | Manufacture and Applications |
| topic | TECHNOLOGY & ENGINEERING / Mechanical bisacsh Semiconductors fast Silicon fast Silicon-on-insulator technology fast Semiconductors Congresses Silicon Congresses Silicon-on-insulator technology Congresses CMOS (DE-588)4010319-5 gnd SOI-Technik (DE-588)4128029-5 gnd Halbleitersubstrat (DE-588)4158813-7 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Mechanical Semiconductors Silicon Silicon-on-insulator technology Semiconductors Congresses Silicon Congresses Silicon-on-insulator technology Congresses CMOS SOI-Technik Halbleitersubstrat Konferenzschrift |
| url | http://www.sciencedirect.com/science/book/9780857095268 |
| work_keys_str_mv | AT kononchuko silicononinsulatorsoitechnologymanufactureandapplications AT nguyenby silicononinsulatorsoitechnologymanufactureandapplications |