Ion implantation and beam processing:
Saved in:
| Format: | Electronic eBook |
|---|---|
| Language: | English |
| Published: |
Sydney
Academic Press
1984
|
| Subjects: | |
| Online Access: | FAW01 Volltext |
| Item Description: | Includes bibliographical references and index Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable |
| Physical Description: | xi, 419 pages |
| ISBN: | 9781483220642 1483220648 0127569804 9780127569802 |
Staff View
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV044386360 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 170630s1984 |||| o||u| ||||||eng d | ||
| 020 | |a 9781483220642 |9 978-1-4832-2064-2 | ||
| 020 | |a 1483220648 |9 1-4832-2064-8 | ||
| 020 | |a 0127569804 |9 0-12-756980-4 | ||
| 020 | |a 9780127569802 |9 978-0-12-756980-2 | ||
| 035 | |a (ZDB-33-ESD)ocn610182918 | ||
| 035 | |a (OCoLC)610182918 | ||
| 035 | |a (DE-599)BVBBV044386360 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-1046 | ||
| 082 | 0 | |a 621.3815/2 |2 19eng | |
| 245 | 1 | 0 | |a Ion implantation and beam processing |c edited by J.S. Williams, J.M. Poate |
| 264 | 1 | |a Sydney |b Academic Press |c 1984 | |
| 300 | |a xi, 419 pages | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a Includes bibliographical references and index | ||
| 500 | |a Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable | ||
| 650 | 4 | |a Ions / Implantation | |
| 650 | 4 | |a Bombardement ionique | |
| 650 | 4 | |a Semiconducteurs / Dopage | |
| 650 | 4 | |a Faisceaux électroniques | |
| 650 | 7 | |a Ionenimplantation |2 swd | |
| 650 | 7 | |a Electron beams |2 fast | |
| 650 | 7 | |a Ion bombardment |2 fast | |
| 650 | 7 | |a Ion implantation |2 fast | |
| 650 | 7 | |a Semiconductor doping |2 fast | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Mechanical |2 bisacsh | |
| 650 | 4 | |a Electron beams | |
| 650 | 4 | |a Ion bombardment | |
| 650 | 4 | |a Ion implantation | |
| 650 | 4 | |a Semiconductor doping | |
| 650 | 4 | |a Ion implantation | |
| 650 | 4 | |a Ion bombardment | |
| 650 | 4 | |a Semiconductor doping | |
| 650 | 4 | |a Electron beams | |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ionenimplantation |0 (DE-588)4027606-5 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Ionenimplantation |0 (DE-588)4027606-5 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Williams, James S. |e Sonstige |4 oth | |
| 700 | 1 | |a Poate, J. M. |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u http://www.sciencedirect.com/science/book/9780127569802 |x Verlag |z URL des Erstveröffentlichers |3 Volltext |
| 912 | |a ZDB-33-ESD | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-029788581 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 966 | e | |u http://www.sciencedirect.com/science/book/9780127569802 |l FAW01 |p ZDB-33-ESD |q FAW_PDA_ESD |x Verlag |3 Volltext | |
Record in the Search Index
| _version_ | 1804177654295822336 |
|---|---|
| any_adam_object | |
| building | Verbundindex |
| bvnumber | BV044386360 |
| collection | ZDB-33-ESD |
| ctrlnum | (ZDB-33-ESD)ocn610182918 (OCoLC)610182918 (DE-599)BVBBV044386360 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03296nmm a2200673zc 4500</leader><controlfield tag="001">BV044386360</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">170630s1984 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781483220642</subfield><subfield code="9">978-1-4832-2064-2</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1483220648</subfield><subfield code="9">1-4832-2064-8</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0127569804</subfield><subfield code="9">0-12-756980-4</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780127569802</subfield><subfield code="9">978-0-12-756980-2</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-33-ESD)ocn610182918</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)610182918</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV044386360</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1046</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">19eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ion implantation and beam processing</subfield><subfield code="c">edited by J.S. Williams, J.M. Poate</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Sydney</subfield><subfield code="b">Academic Press</subfield><subfield code="c">1984</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">xi, 419 pages</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ions / Implantation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Bombardement ionique</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconducteurs / Dopage</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Faisceaux électroniques</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Ionenimplantation</subfield><subfield code="2">swd</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Electron beams</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Ion bombardment</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Ion implantation</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductor doping</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Mechanical</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electron beams</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ion bombardment</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ion implantation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor doping</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ion implantation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ion bombardment</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor doping</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electron beams</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ionenimplantation</subfield><subfield code="0">(DE-588)4027606-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Ionenimplantation</subfield><subfield code="0">(DE-588)4027606-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Williams, James S.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Poate, J. M.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.sciencedirect.com/science/book/9780127569802</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveröffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-33-ESD</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-029788581</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://www.sciencedirect.com/science/book/9780127569802</subfield><subfield code="l">FAW01</subfield><subfield code="p">ZDB-33-ESD</subfield><subfield code="q">FAW_PDA_ESD</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV044386360 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:51:31Z |
| institution | BVB |
| isbn | 9781483220642 1483220648 0127569804 9780127569802 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029788581 |
| oclc_num | 610182918 |
| open_access_boolean | |
| owner | DE-1046 |
| owner_facet | DE-1046 |
| physical | xi, 419 pages |
| psigel | ZDB-33-ESD ZDB-33-ESD FAW_PDA_ESD |
| publishDate | 1984 |
| publishDateSearch | 1984 |
| publishDateSort | 1984 |
| publisher | Academic Press |
| record_format | marc |
| spelling | Ion implantation and beam processing edited by J.S. Williams, J.M. Poate Sydney Academic Press 1984 xi, 419 pages txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references and index Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable Ions / Implantation Bombardement ionique Semiconducteurs / Dopage Faisceaux électroniques Ionenimplantation swd Electron beams fast Ion bombardment fast Ion implantation fast Semiconductor doping fast TECHNOLOGY & ENGINEERING / Mechanical bisacsh Electron beams Ion bombardment Ion implantation Semiconductor doping Halbleiter (DE-588)4022993-2 gnd rswk-swf Ionenimplantation (DE-588)4027606-5 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Ionenimplantation (DE-588)4027606-5 s 1\p DE-604 Williams, James S. Sonstige oth Poate, J. M. Sonstige oth http://www.sciencedirect.com/science/book/9780127569802 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Ion implantation and beam processing Ions / Implantation Bombardement ionique Semiconducteurs / Dopage Faisceaux électroniques Ionenimplantation swd Electron beams fast Ion bombardment fast Ion implantation fast Semiconductor doping fast TECHNOLOGY & ENGINEERING / Mechanical bisacsh Electron beams Ion bombardment Ion implantation Semiconductor doping Halbleiter (DE-588)4022993-2 gnd Ionenimplantation (DE-588)4027606-5 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4027606-5 |
| title | Ion implantation and beam processing |
| title_auth | Ion implantation and beam processing |
| title_exact_search | Ion implantation and beam processing |
| title_full | Ion implantation and beam processing edited by J.S. Williams, J.M. Poate |
| title_fullStr | Ion implantation and beam processing edited by J.S. Williams, J.M. Poate |
| title_full_unstemmed | Ion implantation and beam processing edited by J.S. Williams, J.M. Poate |
| title_short | Ion implantation and beam processing |
| title_sort | ion implantation and beam processing |
| topic | Ions / Implantation Bombardement ionique Semiconducteurs / Dopage Faisceaux électroniques Ionenimplantation swd Electron beams fast Ion bombardment fast Ion implantation fast Semiconductor doping fast TECHNOLOGY & ENGINEERING / Mechanical bisacsh Electron beams Ion bombardment Ion implantation Semiconductor doping Halbleiter (DE-588)4022993-2 gnd Ionenimplantation (DE-588)4027606-5 gnd |
| topic_facet | Ions / Implantation Bombardement ionique Semiconducteurs / Dopage Faisceaux électroniques Ionenimplantation Electron beams Ion bombardment Ion implantation Semiconductor doping TECHNOLOGY & ENGINEERING / Mechanical Halbleiter |
| url | http://www.sciencedirect.com/science/book/9780127569802 |
| work_keys_str_mv | AT williamsjamess ionimplantationandbeamprocessing AT poatejm ionimplantationandbeamprocessing |