Ion implantation and beam processing:
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Sydney
Academic Press
1984
|
| Schlagworte: | |
| Online-Zugang: | FAW01 Volltext |
| Beschreibung: | Includes bibliographical references and index Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable |
| Beschreibung: | xi, 419 pages |
| ISBN: | 9781483220642 1483220648 0127569804 9780127569802 |
Internformat
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| 245 | 1 | 0 | |a Ion implantation and beam processing |c edited by J.S. Williams, J.M. Poate |
| 264 | 1 | |a Sydney |b Academic Press |c 1984 | |
| 300 | |a xi, 419 pages | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a Includes bibliographical references and index | ||
| 500 | |a Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable | ||
| 650 | 4 | |a Ions / Implantation | |
| 650 | 4 | |a Bombardement ionique | |
| 650 | 4 | |a Semiconducteurs / Dopage | |
| 650 | 4 | |a Faisceaux électroniques | |
| 650 | 7 | |a Ionenimplantation |2 swd | |
| 650 | 7 | |a Electron beams |2 fast | |
| 650 | 7 | |a Ion bombardment |2 fast | |
| 650 | 7 | |a Ion implantation |2 fast | |
| 650 | 7 | |a Semiconductor doping |2 fast | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Mechanical |2 bisacsh | |
| 650 | 4 | |a Electron beams | |
| 650 | 4 | |a Ion bombardment | |
| 650 | 4 | |a Ion implantation | |
| 650 | 4 | |a Semiconductor doping | |
| 650 | 4 | |a Ion implantation | |
| 650 | 4 | |a Ion bombardment | |
| 650 | 4 | |a Semiconductor doping | |
| 650 | 4 | |a Electron beams | |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ionenimplantation |0 (DE-588)4027606-5 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Ionenimplantation |0 (DE-588)4027606-5 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Williams, James S. |e Sonstige |4 oth | |
| 700 | 1 | |a Poate, J. M. |e Sonstige |4 oth | |
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| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| id | DE-604.BV044386360 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:51:31Z |
| institution | BVB |
| isbn | 9781483220642 1483220648 0127569804 9780127569802 |
| language | English |
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| physical | xi, 419 pages |
| psigel | ZDB-33-ESD ZDB-33-ESD FAW_PDA_ESD |
| publishDate | 1984 |
| publishDateSearch | 1984 |
| publishDateSort | 1984 |
| publisher | Academic Press |
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| spelling | Ion implantation and beam processing edited by J.S. Williams, J.M. Poate Sydney Academic Press 1984 xi, 419 pages txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references and index Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable Ions / Implantation Bombardement ionique Semiconducteurs / Dopage Faisceaux électroniques Ionenimplantation swd Electron beams fast Ion bombardment fast Ion implantation fast Semiconductor doping fast TECHNOLOGY & ENGINEERING / Mechanical bisacsh Electron beams Ion bombardment Ion implantation Semiconductor doping Halbleiter (DE-588)4022993-2 gnd rswk-swf Ionenimplantation (DE-588)4027606-5 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Ionenimplantation (DE-588)4027606-5 s 1\p DE-604 Williams, James S. Sonstige oth Poate, J. M. Sonstige oth http://www.sciencedirect.com/science/book/9780127569802 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Ion implantation and beam processing Ions / Implantation Bombardement ionique Semiconducteurs / Dopage Faisceaux électroniques Ionenimplantation swd Electron beams fast Ion bombardment fast Ion implantation fast Semiconductor doping fast TECHNOLOGY & ENGINEERING / Mechanical bisacsh Electron beams Ion bombardment Ion implantation Semiconductor doping Halbleiter (DE-588)4022993-2 gnd Ionenimplantation (DE-588)4027606-5 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4027606-5 |
| title | Ion implantation and beam processing |
| title_auth | Ion implantation and beam processing |
| title_exact_search | Ion implantation and beam processing |
| title_full | Ion implantation and beam processing edited by J.S. Williams, J.M. Poate |
| title_fullStr | Ion implantation and beam processing edited by J.S. Williams, J.M. Poate |
| title_full_unstemmed | Ion implantation and beam processing edited by J.S. Williams, J.M. Poate |
| title_short | Ion implantation and beam processing |
| title_sort | ion implantation and beam processing |
| topic | Ions / Implantation Bombardement ionique Semiconducteurs / Dopage Faisceaux électroniques Ionenimplantation swd Electron beams fast Ion bombardment fast Ion implantation fast Semiconductor doping fast TECHNOLOGY & ENGINEERING / Mechanical bisacsh Electron beams Ion bombardment Ion implantation Semiconductor doping Halbleiter (DE-588)4022993-2 gnd Ionenimplantation (DE-588)4027606-5 gnd |
| topic_facet | Ions / Implantation Bombardement ionique Semiconducteurs / Dopage Faisceaux électroniques Ionenimplantation Electron beams Ion bombardment Ion implantation Semiconductor doping TECHNOLOGY & ENGINEERING / Mechanical Halbleiter |
| url | http://www.sciencedirect.com/science/book/9780127569802 |
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