Effect of disorder and defects in ion-implanted semiconductors: electrical and physicochemical characterization
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
San Diego
Academic Press
©1997
|
| Schriftenreihe: | Semiconductors and semimetals
v. 45 |
| Schlagworte: | |
| Online-Zugang: | FAW01 URL des Erstveröffentlichers |
| Beschreibung: | Includes bibliographical references and index Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Key Features * Provides basic knowledge of ion implantation-induced defects * Focuses on physical mechanisms of defect annealing * Utilizes electrical and physico-chemical characterization tools for processed semiconductors * Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination |
| Beschreibung: | xix, 300 pages |
| ISBN: | 9780080864426 0080864422 0127521453 9780127521459 1281715514 9781281715517 |
Internformat
MARC
| LEADER | 00000nmm a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV044384589 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 170630s1997 |||| o||u| ||||||eng d | ||
| 020 | |a 9780080864426 |9 978-0-08-086442-6 | ||
| 020 | |a 0080864422 |9 0-08-086442-2 | ||
| 020 | |a 0127521453 |9 0-12-752145-3 | ||
| 020 | |a 9780127521459 |9 978-0-12-752145-9 | ||
| 020 | |a 1281715514 |9 1-281-71551-4 | ||
| 020 | |a 9781281715517 |9 978-1-281-71551-7 | ||
| 035 | |a (ZDB-33-ESD)ocn289171465 | ||
| 035 | |a (OCoLC)289171465 | ||
| 035 | |a (DE-599)BVBBV044384589 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-1046 | ||
| 082 | 0 | |a 537.622 |2 22 | |
| 245 | 1 | 0 | |a Effect of disorder and defects in ion-implanted semiconductors |b electrical and physicochemical characterization |c volume editors, Gérard Ghibaudo, Constantinos Christofides |
| 264 | 1 | |a San Diego |b Academic Press |c ©1997 | |
| 300 | |a xix, 300 pages | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a Semiconductors and semimetals |v v. 45 | |
| 500 | |a Includes bibliographical references and index | ||
| 500 | |a Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Key Features * Provides basic knowledge of ion implantation-induced defects * Focuses on physical mechanisms of defect annealing * Utilizes electrical and physico-chemical characterization tools for processed semiconductors * Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination | ||
| 650 | 4 | |a Electricity | |
| 650 | 4 | |a Semiconductors | |
| 650 | 4 | |a Semimetals | |
| 650 | 7 | |a SCIENCE / Physics / Electricity |2 bisacsh | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 650 | 7 | |a Semimetals |2 fast | |
| 650 | 4 | |a Semiconductors | |
| 650 | 4 | |a Semimetals | |
| 700 | 1 | |a Ghibaudo, Gérard |e Sonstige |4 oth | |
| 700 | 1 | |a Christofides, Constantinos |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u http://www.sciencedirect.com/science/bookseries/00808784/45 |x Verlag |z URL des Erstveröffentlichers |3 Volltext |
| 912 | |a ZDB-33-ESD | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-029786810 | ||
| 966 | e | |u http://www.sciencedirect.com/science/bookseries/00808784/45 |l FAW01 |p ZDB-33-ESD |q FAW_PDA_ESD |x Verlag |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804177650843910144 |
|---|---|
| any_adam_object | |
| building | Verbundindex |
| bvnumber | BV044384589 |
| collection | ZDB-33-ESD |
| ctrlnum | (ZDB-33-ESD)ocn289171465 (OCoLC)289171465 (DE-599)BVBBV044384589 |
| dewey-full | 537.622 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.622 |
| dewey-search | 537.622 |
| dewey-sort | 3537.622 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02997nmm a2200517zcb4500</leader><controlfield tag="001">BV044384589</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">170630s1997 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780080864426</subfield><subfield code="9">978-0-08-086442-6</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0080864422</subfield><subfield code="9">0-08-086442-2</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0127521453</subfield><subfield code="9">0-12-752145-3</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780127521459</subfield><subfield code="9">978-0-12-752145-9</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1281715514</subfield><subfield code="9">1-281-71551-4</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781281715517</subfield><subfield code="9">978-1-281-71551-7</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-33-ESD)ocn289171465</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)289171465</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV044384589</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1046</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.622</subfield><subfield code="2">22</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effect of disorder and defects in ion-implanted semiconductors</subfield><subfield code="b">electrical and physicochemical characterization</subfield><subfield code="c">volume editors, Gérard Ghibaudo, Constantinos Christofides</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">San Diego</subfield><subfield code="b">Academic Press</subfield><subfield code="c">©1997</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">xix, 300 pages</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Semiconductors and semimetals</subfield><subfield code="v">v. 45</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Key Features * Provides basic knowledge of ion implantation-induced defects * Focuses on physical mechanisms of defect annealing * Utilizes electrical and physico-chemical characterization tools for processed semiconductors * Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electricity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semimetals</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">SCIENCE / Physics / Electricity</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semimetals</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semimetals</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ghibaudo, Gérard</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Christofides, Constantinos</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.sciencedirect.com/science/bookseries/00808784/45</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveröffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-33-ESD</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-029786810</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://www.sciencedirect.com/science/bookseries/00808784/45</subfield><subfield code="l">FAW01</subfield><subfield code="p">ZDB-33-ESD</subfield><subfield code="q">FAW_PDA_ESD</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV044384589 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:51:27Z |
| institution | BVB |
| isbn | 9780080864426 0080864422 0127521453 9780127521459 1281715514 9781281715517 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029786810 |
| oclc_num | 289171465 |
| open_access_boolean | |
| owner | DE-1046 |
| owner_facet | DE-1046 |
| physical | xix, 300 pages |
| psigel | ZDB-33-ESD ZDB-33-ESD FAW_PDA_ESD |
| publishDate | 1997 |
| publishDateSearch | 1997 |
| publishDateSort | 1997 |
| publisher | Academic Press |
| record_format | marc |
| series2 | Semiconductors and semimetals |
| spelling | Effect of disorder and defects in ion-implanted semiconductors electrical and physicochemical characterization volume editors, Gérard Ghibaudo, Constantinos Christofides San Diego Academic Press ©1997 xix, 300 pages txt rdacontent c rdamedia cr rdacarrier Semiconductors and semimetals v. 45 Includes bibliographical references and index Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Key Features * Provides basic knowledge of ion implantation-induced defects * Focuses on physical mechanisms of defect annealing * Utilizes electrical and physico-chemical characterization tools for processed semiconductors * Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination Electricity Semiconductors Semimetals SCIENCE / Physics / Electricity bisacsh Semiconductors fast Semimetals fast Ghibaudo, Gérard Sonstige oth Christofides, Constantinos Sonstige oth http://www.sciencedirect.com/science/bookseries/00808784/45 Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Effect of disorder and defects in ion-implanted semiconductors electrical and physicochemical characterization Electricity Semiconductors Semimetals SCIENCE / Physics / Electricity bisacsh Semiconductors fast Semimetals fast |
| title | Effect of disorder and defects in ion-implanted semiconductors electrical and physicochemical characterization |
| title_auth | Effect of disorder and defects in ion-implanted semiconductors electrical and physicochemical characterization |
| title_exact_search | Effect of disorder and defects in ion-implanted semiconductors electrical and physicochemical characterization |
| title_full | Effect of disorder and defects in ion-implanted semiconductors electrical and physicochemical characterization volume editors, Gérard Ghibaudo, Constantinos Christofides |
| title_fullStr | Effect of disorder and defects in ion-implanted semiconductors electrical and physicochemical characterization volume editors, Gérard Ghibaudo, Constantinos Christofides |
| title_full_unstemmed | Effect of disorder and defects in ion-implanted semiconductors electrical and physicochemical characterization volume editors, Gérard Ghibaudo, Constantinos Christofides |
| title_short | Effect of disorder and defects in ion-implanted semiconductors |
| title_sort | effect of disorder and defects in ion implanted semiconductors electrical and physicochemical characterization |
| title_sub | electrical and physicochemical characterization |
| topic | Electricity Semiconductors Semimetals SCIENCE / Physics / Electricity bisacsh Semiconductors fast Semimetals fast |
| topic_facet | Electricity Semiconductors Semimetals SCIENCE / Physics / Electricity |
| url | http://www.sciencedirect.com/science/bookseries/00808784/45 |
| work_keys_str_mv | AT ghibaudogerard effectofdisorderanddefectsinionimplantedsemiconductorselectricalandphysicochemicalcharacterization AT christofidesconstantinos effectofdisorderanddefectsinionimplantedsemiconductorselectricalandphysicochemicalcharacterization |