Hydrogen in semiconductors:
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Boston
Academic Press
©1991
|
| Schriftenreihe: | Semiconductors and semimetals
v. 34 |
| Schlagworte: | |
| Online-Zugang: | FAW01 URL des Erstveröffentlichers |
| Beschreibung: | Includes bibliographical references and index Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference |
| Beschreibung: | xiii, 629 pages |
| ISBN: | 9780080864310 0080864317 0127521348 9780127521343 |
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| 300 | |a xiii, 629 pages | ||
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| 490 | 0 | |a Semiconductors and semimetals |v v. 34 | |
| 500 | |a Includes bibliographical references and index | ||
| 500 | |a Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference | ||
| 650 | 4 | |a Semiconductors | |
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| 650 | 4 | |a Semiconductors |x Hydrogen content | |
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| 700 | 1 | |a Johnson, Noble M. |e Sonstige |4 oth | |
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| indexdate | 2024-07-10T07:51:27Z |
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| isbn | 9780080864310 0080864317 0127521348 9780127521343 |
| language | English |
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| physical | xiii, 629 pages |
| psigel | ZDB-33-ESD ZDB-33-ESD FAW_PDA_ESD |
| publishDate | 1991 |
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| series2 | Semiconductors and semimetals |
| spelling | Hydrogen in semiconductors volume editors, Jacques I. Pankove, Noble M. Johnson Boston Academic Press ©1991 xiii, 629 pages txt rdacontent c rdamedia cr rdacarrier Semiconductors and semimetals v. 34 Includes bibliographical references and index Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference Semiconductors SCIENCE / Physics / Electricity bisacsh Condutores eletricos larpcal Semiconducteurs ram Semiconductors Hydrogen content Pankove, Jacques I. Sonstige oth Johnson, Noble M. Sonstige oth http://www.sciencedirect.com/science/bookseries/00808784/34 Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Hydrogen in semiconductors Semiconductors SCIENCE / Physics / Electricity bisacsh Condutores eletricos larpcal Semiconducteurs ram Semiconductors Hydrogen content |
| title | Hydrogen in semiconductors |
| title_auth | Hydrogen in semiconductors |
| title_exact_search | Hydrogen in semiconductors |
| title_full | Hydrogen in semiconductors volume editors, Jacques I. Pankove, Noble M. Johnson |
| title_fullStr | Hydrogen in semiconductors volume editors, Jacques I. Pankove, Noble M. Johnson |
| title_full_unstemmed | Hydrogen in semiconductors volume editors, Jacques I. Pankove, Noble M. Johnson |
| title_short | Hydrogen in semiconductors |
| title_sort | hydrogen in semiconductors |
| topic | Semiconductors SCIENCE / Physics / Electricity bisacsh Condutores eletricos larpcal Semiconducteurs ram Semiconductors Hydrogen content |
| topic_facet | Semiconductors SCIENCE / Physics / Electricity Condutores eletricos Semiconducteurs Semiconductors Hydrogen content |
| url | http://www.sciencedirect.com/science/bookseries/00808784/34 |
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