Semiconductors and semimetals, Volume 46, Effect of disorder and defects in ion-implanted semiconductors: optical and photothermal characterization
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
San Diego
Academic Press
©1997
|
| Schriftenreihe: | Semiconductors and semimetals
46 |
| Schlagworte: | |
| Online-Zugang: | FAW01 URL des Erstveröffentlichers |
| Beschreibung: | Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Key Features * Provides basic knowledge of ion implantation-induced defects * Focuses on physical mechanisms of defect annealing * Utilizes electrical, physical, and optical characterization tools for processed semiconductors * Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination |
| Beschreibung: | xvi, 316 pages |
| ISBN: | 0127521461 9780127521466 |
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| 246 | 1 | 3 | |a Effect of disorder and defects in ion-implanted semiconductors |
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| 490 | 0 | |a Semiconductors and semimetals |v 46 | |
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| indexdate | 2024-07-10T07:51:20Z |
| institution | BVB |
| isbn | 0127521461 9780127521466 |
| language | English |
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| series2 | Semiconductors and semimetals |
| spelling | Semiconductors and semimetals, Volume 46, Effect of disorder and defects in ion-implanted semiconductors optical and photothermal characterization volume editors, Constantinos Christofides, Gérard Ghibaudo Effect of disorder and defects in ion-implanted semiconductors San Diego Academic Press ©1997 xvi, 316 pages txt rdacontent c rdamedia cr rdacarrier Semiconductors and semimetals 46 Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Key Features * Provides basic knowledge of ion implantation-induced defects * Focuses on physical mechanisms of defect annealing * Utilizes electrical, physical, and optical characterization tools for processed semiconductors * Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination Ion implantation fast Semiconductors / Defects fast Semiconductors Defects Ion implantation Ghibaudo, Gérard Sonstige oth Christofides, Constantinos Sonstige oth http://www.sciencedirect.com/science/bookseries/00808784/46 Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Semiconductors and semimetals, Volume 46, Effect of disorder and defects in ion-implanted semiconductors optical and photothermal characterization Ion implantation fast Semiconductors / Defects fast Semiconductors Defects Ion implantation |
| title | Semiconductors and semimetals, Volume 46, Effect of disorder and defects in ion-implanted semiconductors optical and photothermal characterization |
| title_alt | Effect of disorder and defects in ion-implanted semiconductors |
| title_auth | Semiconductors and semimetals, Volume 46, Effect of disorder and defects in ion-implanted semiconductors optical and photothermal characterization |
| title_exact_search | Semiconductors and semimetals, Volume 46, Effect of disorder and defects in ion-implanted semiconductors optical and photothermal characterization |
| title_full | Semiconductors and semimetals, Volume 46, Effect of disorder and defects in ion-implanted semiconductors optical and photothermal characterization volume editors, Constantinos Christofides, Gérard Ghibaudo |
| title_fullStr | Semiconductors and semimetals, Volume 46, Effect of disorder and defects in ion-implanted semiconductors optical and photothermal characterization volume editors, Constantinos Christofides, Gérard Ghibaudo |
| title_full_unstemmed | Semiconductors and semimetals, Volume 46, Effect of disorder and defects in ion-implanted semiconductors optical and photothermal characterization volume editors, Constantinos Christofides, Gérard Ghibaudo |
| title_short | Semiconductors and semimetals, Volume 46, Effect of disorder and defects in ion-implanted semiconductors |
| title_sort | semiconductors and semimetals volume 46 effect of disorder and defects in ion implanted semiconductors optical and photothermal characterization |
| title_sub | optical and photothermal characterization |
| topic | Ion implantation fast Semiconductors / Defects fast Semiconductors Defects Ion implantation |
| topic_facet | Ion implantation Semiconductors / Defects Semiconductors Defects |
| url | http://www.sciencedirect.com/science/bookseries/00808784/46 |
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