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GaAs based nanowires on silicon - growth and quantum confinement phenomena:

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1. Verfasser:	Loitsch, Bernhard (VerfasserIn)
Format:	Abschlussarbeit Buch
Sprache:	English
Veröffentlicht:	Garching Verein zur Förderung des Walter Schootky Instituts der Technischen Universität München e. V. 2017
Ausgabe:	1. Auflage
Schriftenreihe:	Selected topics on semiconductor physics and technology Vol. 202
Schlagworte:	Hochschulschrift
Online-Zugang:	Inhaltsverzeichnis
Beschreibung:	X, 180 Seiten Illustrationen, Diagramme
ISBN:	9783946379027

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MARC


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Datensatz im Suchindex

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adam_text	CONTENTS ABSTRACT J KURZFASSUNG V 1. INTRODUCTION 1 2. GROWTH OF GAAS-AIGAAS NANOWIRE HETEROSTRUCTURES ON SILICON 7 2.1. SELF-CATALYZED GAAS NANOWIRES ON SILICON SUBSTRATE .................................. 8 2.1.1. MOLECULAR BEAM EPITAXY . ................................................................ 8 2.1.2. SUBSTRATE PREPARATION ........................................................................10 2.1.3. VARIATION OF THE NANOWIRE GROWTH TE M P ERATU RE ............................ 12 2.2. ALGAAS SHELL HETEROSTRUCTURES........................................................................23 2.2.1. RADIAL GAAS QUANTUM W E LLS ........................................... 24 2.2.2. QUANTUM WELL BASED NANOWIRE LA S E R .............................................. 30 2.3. SUMMARY AND CONCLUSION.................................................................................33 3. ALLOY FLUCTUATIONS IN GAAS-AIGAAS CORE-SHELL NANOWIRES 35 3.1. ALLOY FLUCTUATIONS IN SEMICONDUCTOR ALLOYS .................................................. 36 3.2. SHARP LINE PL EMISSION FROM GAAS-ALGAAS CORE SHELL NANOWIRES .... 38 3.3. ATOM PROBE TOM OGRAPHY.................................................................................39 3.4. SIMULATION OF CLUSTER-INDUCED OPTICAL TRANSITION ENERGIES ............................ 46 3.5. CORRELATION OF CLUSTER SIZE AND EMISSSION SP E CTRU M ......................................49 3.6. INTERACTION BETWEEN ADJACENT C LU S TE RS ........................................................... 51 3.7. SUPPRESSION OF ALLOY FLUCTUATIONS VIA SHELL GROWTH TE M P E RA TU RE ................ 54 3.7.1. INFLUENCE OF GROWTH TEMPERATURE ON PHOTOLUM INESCENCE..................55 3.7.2. STRUCTURAL AND COMPOSITIONAL ANALYSIS...............................................65 3.8. CORRELATION OF LOCAL ALLOY COMPOSITION AND CRYSTAL STRU C TU RE ...................... 71 3.9. SUMMARY AND CONCLUSION ..............................................................................74 4. RADIAL QUANTUM CONFINEMENT IN ULTRATHIN GAAS NANOWIRES 77 4.1. NANOWIRES IN THE ID CONFINEMENT RE G IM E ....................................................77 4.2. REVERSE-REACTION G R O W T H ..................................................................................79 4.3. SURFACE PASSIVATION VIA ALGAAS SHELL OVERGROWTH ......................................... 85 4.3.1. RAMAN SPECTROSCOPY ........................................................................... 88 4.4. PHOTOLUMINESCENCE SPECTROSCOPY..................................................................... 90 4.4.1. DIRECT CORRELATION OF PL AND TEM ...............................................90 4.4.2. BLUESHIFT OF PL DUE TO QUANTUM CONFINEMENT .................................... 91 4.5. SUMMARY AND CONCLUSION..................................................................................94 5. CRYSTAL PHASE QUANTUM DOTS IN ULTRATHIN GAAS NANOWIRES 97 5.1. QUANTUM DOTS IN N A N O W IRE S ........................................................................... 97 5.2. CORRELATION OF LUMINESCENCE AND CRYSTAL S TR U C T U R E ...................................... 99 5.2.1. PHOTOLUMINESCENCE AND TRANSMISSION ELECTRON MICROSCOPY . . . .100 5.2.2. CATHODOLUMINESCENCE..........................................................................102 5.3. AXIALLY LOCALIZED EXCITONS................................................................................110 5.4. PHOTOLUMINESCENCE-EXCITATION SPECTROSCOPY.................................................114 5.5. TIME-RESOLVED PHOTOLUM INESCENCE ................................................................ 117 5.6. AUTOCORRELATION MEASUREMENT OF A SINGLE QUANTUM D O T .............................. 120 5.7. TEMPERATURE DEPENDENT PHOTOLUMINESCENCE.................................................122 5.7.1. THERMALLY ACTIVATED DIFFUSION BETWEEN CP Q D S................................123 5.7.2. PHONON BROADENING OF THE LINEW IDTH.................................................128 5.7.3. VARSHNI SH IFT......................................................................................... 129 5.8. SUMMARY AND CONCLUSION................................................................................130 6. OUTLOOK 133 A. RATE EQUATION MODEL FOR THE TEMPERATURE DEPENDENCE 137 B. LIST OF SAMPLES 141 BIBLIOGRAPHY 144 LIST OF ABBREVIATIONS 165 LIST OF FIGURES 168 LIST OF PUBLICATIONS 170 ACKNOWLEDGMENTS 175
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series2	Selected topics on semiconductor physics and technology
spelling	Loitsch, Bernhard Verfasser aut GaAs based nanowires on silicon - growth and quantum confinement phenomena Bernhard Loitsch 1. Auflage Garching Verein zur Förderung des Walter Schootky Instituts der Technischen Universität München e. V. 2017 X, 180 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Selected topics on semiconductor physics and technology Vol. 202 Dissertation Technische Universität München 2017 (DE-588)4113937-9 Hochschulschrift gnd-content Selected topics on semiconductor physics and technology Vol. 202 (DE-604)BV011499438 202 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029756189&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Loitsch, Bernhard GaAs based nanowires on silicon - growth and quantum confinement phenomena Selected topics on semiconductor physics and technology
subject_GND	(DE-588)4113937-9
title	GaAs based nanowires on silicon - growth and quantum confinement phenomena
title_auth	GaAs based nanowires on silicon - growth and quantum confinement phenomena
title_exact_search	GaAs based nanowires on silicon - growth and quantum confinement phenomena
title_full	GaAs based nanowires on silicon - growth and quantum confinement phenomena Bernhard Loitsch
title_fullStr	GaAs based nanowires on silicon - growth and quantum confinement phenomena Bernhard Loitsch
title_full_unstemmed	GaAs based nanowires on silicon - growth and quantum confinement phenomena Bernhard Loitsch
title_short	GaAs based nanowires on silicon - growth and quantum confinement phenomena
title_sort	gaas based nanowires on silicon growth and quantum confinement phenomena
topic_facet	Hochschulschrift
url	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029756189&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
volume_link	(DE-604)BV011499438
work_keys_str_mv	AT loitschbernhard gaasbasednanowiresonsilicongrowthandquantumconfinementphenomena

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