Toward Quantum FinFET:
Gespeichert in:
| Weitere Verfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Cham
Springer
[2013]
|
| Schriftenreihe: | Lecture Notes in Nanoscale Science and Technology
17 |
| Schlagworte: | |
| Online-Zugang: | Inhaltstext |
| Beschreibung: | xi, 363 Seiten Illustrationen, Diagramme |
| ISBN: | 9783319020204 331902020X |
Internformat
MARC
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| 245 | 1 | 0 | |a Toward Quantum FinFET |c Weihua Han, Zhiming M. Wang editors |
| 264 | 1 | |a Cham |b Springer |c [2013] | |
| 264 | 4 | |c © 2013 | |
| 300 | |a xi, 363 Seiten |b Illustrationen, Diagramme | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Lecture Notes in Nanoscale Science and Technology |v 17 | |
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| 653 | |a Research | ||
| 653 | |a TJFD5 | ||
| 653 | |a FinFET | ||
| 653 | |a FinFET Quantum Phenomena | ||
| 653 | |a Quantized Conductance 1D Transport | ||
| 653 | |a Single Electron Effect | ||
| 653 | |a Funneling Transport | ||
| 653 | |a Quantum FinFET and Nanotechnology | ||
| 653 | |a Novel Nanoscale Transistors for Semiconductors | ||
| 653 | |a Nonplanar FinFet | ||
| 653 | |a Quantum Confinement Effect of FinFET | ||
| 653 | |a MOSFET | ||
| 653 | |a Gate-all-around Nanowire MOSFETs | ||
| 653 | |a FinFET Technologies, Device Variability | ||
| 653 | |a Quantum FinFET Electronics | ||
| 653 | |a FinFETs, Electrical Transport | ||
| 653 | |a FinFET Quantum Transport Simulation | ||
| 653 | |a FinFET Quantum Mechanical Potential Modelling | ||
| 653 | |a Mulgi-gate FinFET | ||
| 653 | |a Fin Shape Fluctuation, FinFETs | ||
| 653 | |a Work-function Variability, FinFETs | ||
| 653 | |a CMOS-compatibility | ||
| 653 | |a Schottky Warp-Gate Controlled Single Electron Transistor | ||
| 653 | |a Single Electron Transistor, Graphene | ||
| 653 | |a Quantum Dots on Graphene | ||
| 653 | |a Highly Scaled SiGe/Si Core/Shell Nanowire | ||
| 653 | |a High Voltage FinFETs for SoC Applications | ||
| 653 | |a Nanofabrication | ||
| 653 | |a Quantum Transport | ||
| 653 | |a Quantum Confinement | ||
| 653 | |a Silicon Nanowire | ||
| 655 | 7 | |0 (DE-588)4143413-4 |a Aufsatzsammlung |2 gnd-content | |
| 689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
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| 689 | 0 | 3 | |a Nanostruktur |0 (DE-588)4204530-7 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Han, Weihua |4 edt | |
| 700 | 1 | |a Wang, Zhiming M. |4 edt | |
| 776 | 0 | 8 | |i Erscheint auch als |n Online-Ausgabe, eBook |z 978-3-319-02021-1 |
| 776 | 0 | 8 | |i Online-Ausg. |z 9783319020211 |
| 830 | 0 | |a Lecture Notes in Nanoscale Science and Technology |v 17 |w (DE-604)BV023338687 |9 17 | |
| 856 | 4 | 2 | |m X:MVB |q text/html |u http://deposit.dnb.de/cgi-bin/dokserv?id=4396932&prov=M&dok_var=1&dok_ext=htm |3 Inhaltstext |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-029663251 | |
Datensatz im Suchindex
| _version_ | 1806413449822994432 |
|---|---|
| adam_text | |
| any_adam_object | |
| author2 | Han, Weihua Wang, Zhiming M. |
| author2_role | edt edt |
| author2_variant | w h wh z m w zm zmw |
| author_facet | Han, Weihua Wang, Zhiming M. |
| building | Verbundindex |
| bvnumber | BV044258252 |
| ctrlnum | (OCoLC)874713895 (DE-599)DNB1037896416 |
| dewey-full | 670 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 670 - Manufacturing |
| dewey-raw | 670 |
| dewey-search | 670 |
| dewey-sort | 3670 |
| dewey-tens | 670 - Manufacturing |
| discipline | Werkstoffwissenschaften / Fertigungstechnik |
| format | Book |
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| genre | (DE-588)4143413-4 Aufsatzsammlung gnd-content |
| genre_facet | Aufsatzsammlung |
| id | DE-604.BV044258252 |
| illustrated | Illustrated |
| indexdate | 2024-08-04T00:08:31Z |
| institution | BVB |
| isbn | 9783319020204 331902020X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029663251 |
| oclc_num | 874713895 |
| open_access_boolean | |
| owner | DE-634 |
| owner_facet | DE-634 |
| physical | xi, 363 Seiten Illustrationen, Diagramme |
| publishDate | 2013 |
| publishDateSearch | 2013 |
| publishDateSort | 2013 |
| publisher | Springer |
| record_format | marc |
| series | Lecture Notes in Nanoscale Science and Technology |
| series2 | Lecture Notes in Nanoscale Science and Technology |
| spelling | Toward Quantum FinFET Weihua Han, Zhiming M. Wang editors Cham Springer [2013] © 2013 xi, 363 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Lecture Notes in Nanoscale Science and Technology 17 Quanteneffekt (DE-588)4356922-5 gnd rswk-swf Nanostruktur (DE-588)4204530-7 gnd rswk-swf Nanometerbereich (DE-588)4327473-0 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Research TJFD5 FinFET FinFET Quantum Phenomena Quantized Conductance 1D Transport Single Electron Effect Funneling Transport Quantum FinFET and Nanotechnology Novel Nanoscale Transistors for Semiconductors Nonplanar FinFet Quantum Confinement Effect of FinFET MOSFET Gate-all-around Nanowire MOSFETs FinFET Technologies, Device Variability Quantum FinFET Electronics FinFETs, Electrical Transport FinFET Quantum Transport Simulation FinFET Quantum Mechanical Potential Modelling Mulgi-gate FinFET Fin Shape Fluctuation, FinFETs Work-function Variability, FinFETs CMOS-compatibility Schottky Warp-Gate Controlled Single Electron Transistor Single Electron Transistor, Graphene Quantum Dots on Graphene Highly Scaled SiGe/Si Core/Shell Nanowire High Voltage FinFETs for SoC Applications Nanofabrication Quantum Transport Quantum Confinement Silicon Nanowire (DE-588)4143413-4 Aufsatzsammlung gnd-content MOS-FET (DE-588)4207266-9 s Nanometerbereich (DE-588)4327473-0 s Quanteneffekt (DE-588)4356922-5 s Nanostruktur (DE-588)4204530-7 s DE-604 Han, Weihua edt Wang, Zhiming M. edt Erscheint auch als Online-Ausgabe, eBook 978-3-319-02021-1 Online-Ausg. 9783319020211 Lecture Notes in Nanoscale Science and Technology 17 (DE-604)BV023338687 17 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=4396932&prov=M&dok_var=1&dok_ext=htm Inhaltstext |
| spellingShingle | Toward Quantum FinFET Lecture Notes in Nanoscale Science and Technology Quanteneffekt (DE-588)4356922-5 gnd Nanostruktur (DE-588)4204530-7 gnd Nanometerbereich (DE-588)4327473-0 gnd MOS-FET (DE-588)4207266-9 gnd |
| subject_GND | (DE-588)4356922-5 (DE-588)4204530-7 (DE-588)4327473-0 (DE-588)4207266-9 (DE-588)4143413-4 |
| title | Toward Quantum FinFET |
| title_auth | Toward Quantum FinFET |
| title_exact_search | Toward Quantum FinFET |
| title_full | Toward Quantum FinFET Weihua Han, Zhiming M. Wang editors |
| title_fullStr | Toward Quantum FinFET Weihua Han, Zhiming M. Wang editors |
| title_full_unstemmed | Toward Quantum FinFET Weihua Han, Zhiming M. Wang editors |
| title_short | Toward Quantum FinFET |
| title_sort | toward quantum finfet |
| topic | Quanteneffekt (DE-588)4356922-5 gnd Nanostruktur (DE-588)4204530-7 gnd Nanometerbereich (DE-588)4327473-0 gnd MOS-FET (DE-588)4207266-9 gnd |
| topic_facet | Quanteneffekt Nanostruktur Nanometerbereich MOS-FET Aufsatzsammlung |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=4396932&prov=M&dok_var=1&dok_ext=htm |
| volume_link | (DE-604)BV023338687 |
| work_keys_str_mv | AT hanweihua towardquantumfinfet AT wangzhimingm towardquantumfinfet |