Silicon nanophotonics: basic principles, present status and perspectives
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Singapore
Pan Stanford Publishing
2016
|
| Ausgabe: | Second edition |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | xviii, 503 Seiten Illustrationen 24 cm |
| ISBN: | 9789814669764 |
Internformat
MARC
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| 245 | 1 | 0 | |a Silicon nanophotonics |b basic principles, present status and perspectives |c edited by Leonid Khriachtchev |
| 250 | |a Second edition | ||
| 264 | 1 | |a Singapore |b Pan Stanford Publishing |c 2016 | |
| 300 | |a xviii, 503 Seiten |b Illustrationen |c 24 cm | ||
| 336 | |b txt |2 rdacontent | ||
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| 505 | 8 | |a Includes bibliographical references and index | |
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| 650 | 4 | |a Nanofotónica | |
| 650 | 4 | |a Nanotecnología | |
| 650 | 4 | |a Nanophotonics | |
| 650 | 4 | |a Nanosilicon | |
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Datensatz im Suchindex
| _version_ | 1804177379688448000 |
|---|---|
| adam_text | Titel: Silicon nanophotonics
Autor: Khriachtchev, Leonid
Jahr: 2016
Contents
Preface xvii
1 Silicon Nanocrystals Enabling Silicon Photonics 1
Nicola Daldosso
1.1 The Need of Silicon Photonics 1
1.1.1 Waveguides 3
1.1.2 Modulators 5
1.1.3 Sources 5
1.1.4 Detectors 7
1.2 Nanosilicon for Photonics 8
1.2.1 Si-nc Waveguides 9
1.2.2 Nonlinear Effects: Fast Optical Switches 10
1.2.3 Light Emission and Optical Gain in Si
Nanocrystals 12
1.2.4 Si Nanocrystals LEDs 13
1.2.5 Er Coupled to Nano-Si for Optical Amplifiers 15
1.2.6 Carrier Absorption within Si Nanocrystals
Waveguides 19
1.3 Conclusions 21
2 Silicon Nanocrystals for Photonics and Photovoltaics:
Ab initio Results 27
Stefano Ossicini, Marco Govoni, Roberto Guerra,
and Ivan Marri
2.1 Introduction 28
2.2 Silicon Nanocrystals Embedded in Matrices 30
2.2.1 Silicon Nanocrystals Embedded in Crystalline
and Amorphous Silica Matrices 30
2.2.1.1 Many-body vs. DFT-LDA results for the
electronic properties 31
viii Contents
2.2.1.2 Roleofamorphization 32
2.2.1.3 Role of strain 33
2.2.1.4 Role of interfaces, oxidation 35
2.3 Ensemble of Nanocrystals and Transport Properties 37
2.4 Silicon Nanocrystals Embedded in SiN Matrices 39
2.5 Silicon Nanocrystals Embedded in SiC Matrices 42
2.6 Doping 44
2.7 Carrier Multiplication Effects in Isolated and
Interacting Si Nanocrystals 47
2.8 Concluding Remarks 53
Modeling Nonlinear Optical Phenomena in Silicon
Nanocrystal Structures 61
Ivan D. Rukhlenko
3.1 Introduction 62
3.2 Linear and Dispersive Properties of Silicon
Nanocrystal Waveguides 63
3.2.1 Characteristics of Silicon Nanocrystal
Composites 64
3.2.2 Effective Mode Area and Effective Mode
Index 66
3.2.3 Waveguide Dispersion 69
3.2.4 Linear Propagation Losses 71
3.3 Nonlinear Properties of Silicon-Nanocrystal
Composites 72
3.3.1 Susceptibility Attenuation Factors 74
3.3.2 Nonlinear Refraction 76
3.3.3 Two-Photon Absorption 79
3.3.4 Stimulated Raman Scattering 83
3.3.5 Excited-Carrier Effects 86
3.3.6 Thermo-Optic Effect 89
3.4 Theory of Nonlinear Optical Propagation 91
3.4.1 Propagation of Multifrequency Pulses 92
3.4.2 Mode-Overlap Factors 93
3.4.3 Propagation of Continuous Waves 95
3.4.4 Two-Wave Propagation through a Slab 96
3.4.5 Short-Distance Raman Amplification 99
3.5 Concluding Remarks 100
Contents ix
Band Structure of Silicon Nanocrystals 109
Katerina Kosovo, Prokop Hapala, PavelJelinek,
and Ivan Pelant
4.1 Introduction 110
4.2 Band Structure in 2-3 nm Silicon Nanocrystals 111
4.2.1 Does E (k) Band Structure Exist in
Nanocrystals? Ill
4.2.2 Theoretical Calculations of £(k) in Silicon
Nanocrystals: The Formalism 114
4.2.3 Theoretical Calculations of E(k) in Silicon
Nanocrystals: The Results 121
4.3 Towards Direct-Bandgap Silicon Nanocrystals 129
4.3.1 Introductory Considerations 129
4.3.2 Simple Model 130
4.3.3 Rigorous DFT Calculations 132
4.3.4 Experimental Realization 135
4.3.5 Remarks to Strain-Engineered Direct-Bandgap
Silicon 139
4.4 Conclusions 140
Engineering the Optical Response of Nanostructured Silicon 145
Joachim Diener, Minoru Fujii, and Dmitri Kovalev
5.1 Introduction 146
5.2 Optical Devices Based on PSi Layers 148
5.3 Polarization-Dependent Optical Properties of PSi 151
5.3.1 In-Plane Birefringence of Porosified (110) Si
Wafers 152
5.3.2 Polarization-Sensitive Optical Multilayers
Based on (110) PSi Layers 155
5.4 (110) PSi as Composite Material 156
5.5 Conclusions 157
Room Temperature Light Emission from Silicon Nanowires
Fabricated by a Metal-Assisted Wet Etching Process 161
Alessia Irrera, Giorgio Franzô, Barbara Fazio,
Simona Boninelli, Paolo Musumeci, Francesco Priolo,
and Fabio lacona
6.1 Introduction 162
x I Contents
6.2 Si NW Synthesis 164
6.3 Structural Characterization of Si NWs 167
6.4 Photoluminescence Properties of Si NWs 170
6.5 Surface Passivation of Si NWs 176
6.6 Electroluminescent Devices Based on Si NWs 180
6.7 Synthesis and Optical Properties of SiGe NWs 181
6.8 Conclusions and Perspectives 184
7 All-Inorganic Colloidal Silicon Nanocrystals 191
Minoru Fujii
7.1 Introduction 192
7.2 Preparation and Characterization of Colloidal Silicon
Nanocrystals with High Boron and Phosphorus
Concentrations 193
7.2.1 Preparation 193
7.2.2 Structural Characterization 196
7.2.2.1 TEM 196
7.2.2.2 Raman spectroscopy 196
7.2.2.3 X-ray photoelectron spectroscopy
(XPS) 198
7.2.3 Si!_xGex Alloy Nanocrystals 199
7.2.4 Size Control 201
7.2.5 Nanocrystal Films (Solids) 204
7.3 Luminescence Properties 205
7.3.1 Luminescence in Methanol 205
7.3.2 Luminescence in Water 209
7.3.2.1 pH dependence 211
7.3.2.2 Stability in water 213
7.3.3 Luminescence of Si Nanocrystal Film Prepared
from Colloid 214
7.4 Summary 215
8 Engineering Nonlinear Sources with Silicon-Compatible
Optical Materials 221
Antonio Capretti, Yu Wang, and Luca Dal Negro
8.1 Introduction 222
8.2 Material Fabrication 223
8.3 Optical Characterization 226
8.3.1 Optical Bandgap 228
Contents xi
8.4 Second- and Third-Harmonic Generation
Spectroscopy 230
8.5 Field Calculation 233
8.6 Second-and Third-Order Susceptibility 235
8.7 Conclusions and Outlook 237
9 Light Emission from Silicon-Based Materials: From Silicon
Nanostructures to Rare Earth Ions 241
Fabio lacona, Maria Miritello, Simona Boninelli,
Gabriele Bellocchi, Alessia Irrera, Francesco Priolo,
and Giorgio Franzo
9.1 Introduction 242
9.2 Formation and Evolution of Si-nc Synthesized by
Thermal Annealing of SiOx Films 246
9.3 Optical Properties of Si-nc 249
9.4 Light-Emitting Devices Based on Si Nanoclusters 252
9.5 Rare Earths Ions Embedded in Si-Based Matrices 260
9.5.1 Light-Emitting Devices Based on Er-Doped Si
Nanoclusters 261
9.5.2 Visible Light Emission from Eu-Doped
Si-Based Matrices 265
9.6 Conclusions 275
10 Silicon Nanocrystals in Silica: Optical Properties and Laser
Annealing 281
Leonid Khriachtchev
10.1 Introduction 282
10.2 Experimental Details 283
10.3 Raman and Photoluminescence Spectra 284
10.3.1 As-Deposited Films 284
10.3.2 Effect of Furnace Annealing 286
10.3.3 Effect of the Substrate 288
10.3.4 Mechanism of PL 289
10.4 Optical Properties 291
10.4.1 Spectral-Filtering Effect 291
10.4.2 Optical Birefringence 293
10.4.3 Refractive Index and Absorption Coefficient 294
10.4.4 Bandgap 297
xii Contents
10.5 Laser-Induced Thermal Effects 298
10.5.1 Laser Annealing: General Observations 298
10.5.2 Laser-Induced Temperature 300
10.5.3 Thermal Emission 302
10.5.4 Laser-Induced Compressive Stress 303
10.5.5 Microscopic Picture of Laser Annealing 305
10.6 Concluding Remarks 309
11 Information Capacity of Silicon Nanophotonics 317
Dimitris Dimitropoulos and Bahram Jalali
11.1 Introduction 318
11.2 Optical Fluctuations due to
Generation-Recombination Noise 321
11.3 Silicon Waveguide Channel Model 322
11.4 Lower Bound to the Channel Capacity for WDM
Systems 323
11.5 Lower Bound to the Channel Capacity for a
Single-Channel System 326
11.6 Lower Bound to Channel Capacity for Coherent
Signaling 327
11.7 Four-Wave Mixing 330
11.8 Results 333
11.9 Scaling of the Silicon Capacity with the Number of
Channels 339
11.10 Conclusions and Future Work 339
Appendix A: Noise Sources 342
A.l Carrier Generation-Recombination Noise and
Optical Intensity Fluctuations 342
A.2 Free-Carrier Absorption Loss Coefficient
Fluctuations 343
A.3 Fluctuations in Free-Carrier Absorption 345
A.4 Two-Photon Absorption Loss Fluctuations 346
A.5 Free-Carrier Absorption Loss Fluctuations in WDM
Signaling 347
Appendix B: Mutual Information Lower Bound 348
Appendix C: Fluctuations due to Free-Carrier Absorption
(FCA) and Two-Photon Absorption (TPA)
and Characteristic Powers for FCA and TPA 349
Contents xiii
Appendix D: Four-Wave Mixing 349
Appendix E: Note on Optimum Input Symbol
Distribution 350
Appendix F: Derivation of FWM Noise 350
12 Silicon Nanocrystal Memories 355
Panagiotis Dimitrakis, Pascal Normand,
and Dimitris Tsoukalas
12.1 Introduction 356
12.2 Silicon Nanocrystals in Memory Technology 357
12.2.1 The Limitations of Current Memory
Technology 357
12.2.2 Nanocrystal Floating-Gate vs. Polysilicon
Floating-Gate Memories 361
12.2.3 Fabrication of Silicon Nanocrystals
Embedded in Gate Dielectrics 364
12.3 Operation, Memory Characteristics, and Reliability
Aspects of Si-nc Nonvolatile Memories 365
12.3.1 Operation Principles of Si-nc Memory
Devices 365
12.3.1.1 Possible source of errors in
estimation of charge stored in
nanocrystals 370
12.3.2 Reliability Considerations 373
12.3.2.1 Endurance ofnc memory cells 373
12.3.2.2 Charge retention ofnc memory
cells 375
12.3.3 Optimization of Memory Characteristics 380
12.4 Novel Devices and Open Issues 384
12.5 Summary 387
13 Nanostructured Silicon Light Emitters 393
Paolo Pellegrino, Olivier Jambois, Se-Young Seo,
and Bias Garrido
13.1 Introduction 393
13.2 Si Nanocluster-Based Light Emitters 394
13.2.1 Short Review: Materials, Transport, and
Excitation 394
xiv Contents
13.2.2 Fabrication Methods of the Optically Active
Material 401
13.2.3 Experimental Approaches to
Electroluminescence 403
13.2.4 Multilayer Structures to Control the
Hot-Carrier Injection 405
13.2.5 C-Rich Nanoparticles to Cover the Full
Visible Spectrum 406
13.3 Er Doping for Gain Materials with Si Nanoclusters 410
13.3.1 Resonant Excitation by Direct Absorption 412
13.3.2 Interaction between Silicon Nanoclusters
and Erbium Ions 413
13.3.3 Limiting Factors for Er Luminescence 416
13.3.4 The Effective Excitation Cross-Section 416
13.3.5 De-excitation Processes 418
13.3.6 Optically Active Er Ions 421
13.3.7 Location of Er Ions and Their Accessibility
by Si-nc 422
13.3.8 Device Realization 424
14 Silicon Nanostructures for Photovoltaics 429
Fabrice Gourbilleau, Pratibha R. Nalini, Julien Cardin,
Christian Dufour, Odile Robbe, Yannick Lambert, Di Zhou,
Tao Xu, and Didier Stiévenard
14.1 Introduction 430
14.2 Experimental 432
14.3 SiOx/Si02 Multilayers 434
14.3.1 Reactive Magnetron Sputtering Approach 434
14.3.2 Reactive Magnetron Co-sputtering
Approach 437
14.4 SiO^/SiN* Multilayers 440
14.4.1 SiNx Layer, a Reactive Magnetron
Sputtering Approach 440
14.4.2 SiO^/SiN* Multilayers 442
14.5 Nanostructured Substrate 445
14.5.1 Nanocone Fabrication 445
14.5.2 Films on Nanostructured Substrate 448
14.5.3 Electrical Properties 448
14.6 Conclusions 452
Contents xv
15 Biological Applications of Silicon Nanostructures 457
Sharon M. Weiss andShuren Hu
15.1 Introduction 457
15.2 Silicon Nanostructures 458
15.2.1 Porous Silicon 459
15.2.2 Ring Resonators 462
15.2.3 Photonic Crystals 464
15.2.4 Slot Waveguides 464
15.3 Sensing Applications: Detection of Gases,
Chemicals, DNA, Viruses, Proteins, and Cells 467
15.3.1 Porous Silicon Structures for Optical
Sensing Applications 468
15.3.2 Ring Resonator Sensor Applications 471
15.3.3 Photonic Crystal Sensor Applications 472
15.3.4 Slot Waveguide Sensor Applications 473
15.4 Drug Delivery, Molecular Separation, and Tissue
Engineering 476
15.5 Conclusions and Outlook 478
Index 495
|
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| indexdate | 2024-07-10T07:47:09Z |
| institution | BVB |
| isbn | 9789814669764 |
| language | English |
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| physical | xviii, 503 Seiten Illustrationen 24 cm |
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| publisher | Pan Stanford Publishing |
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| spelling | Silicon nanophotonics basic principles, present status and perspectives edited by Leonid Khriachtchev Second edition Singapore Pan Stanford Publishing 2016 xviii, 503 Seiten Illustrationen 24 cm txt rdacontent n rdamedia nc rdacarrier Includes bibliographical references and index Fotónica Nanofotónica Nanotecnología Nanophotonics Nanosilicon Nanophotonik (DE-588)7618094-3 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Nanophotonik (DE-588)7618094-3 s Silicium (DE-588)4077445-4 s 1\p DE-604 Khriachtchev, Leonid edt HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029633245&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Silicon nanophotonics basic principles, present status and perspectives Includes bibliographical references and index Fotónica Nanofotónica Nanotecnología Nanophotonics Nanosilicon Nanophotonik (DE-588)7618094-3 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)7618094-3 (DE-588)4077445-4 |
| title | Silicon nanophotonics basic principles, present status and perspectives |
| title_auth | Silicon nanophotonics basic principles, present status and perspectives |
| title_exact_search | Silicon nanophotonics basic principles, present status and perspectives |
| title_full | Silicon nanophotonics basic principles, present status and perspectives edited by Leonid Khriachtchev |
| title_fullStr | Silicon nanophotonics basic principles, present status and perspectives edited by Leonid Khriachtchev |
| title_full_unstemmed | Silicon nanophotonics basic principles, present status and perspectives edited by Leonid Khriachtchev |
| title_short | Silicon nanophotonics |
| title_sort | silicon nanophotonics basic principles present status and perspectives |
| title_sub | basic principles, present status and perspectives |
| topic | Fotónica Nanofotónica Nanotecnología Nanophotonics Nanosilicon Nanophotonik (DE-588)7618094-3 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Fotónica Nanofotónica Nanotecnología Nanophotonics Nanosilicon Nanophotonik Silicium |
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