SiC materials and devices, Vol. 1:
Gespeichert in:
Format: | Elektronisch E-Book |
---|---|
Sprache: | English |
Veröffentlicht: |
New Jersey
World Scientific
2006
|
Schriftenreihe: | Selected topics in electronics and systems
v. 40 |
Schlagworte: | |
Beschreibung: | Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner Includes bibliographical references and index |
Beschreibung: | viii, 335 p. |
ISBN: | 9812568352 9789812568359 9789812773371 |
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245 | 1 | 0 | |a SiC materials and devices, Vol. 1 |c edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
264 | 1 | |a New Jersey |b World Scientific |c 2006 | |
300 | |a viii, 335 p. | ||
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490 | 0 | |a Selected topics in electronics and systems |v v. 40 | |
500 | |a Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner | ||
500 | |a Includes bibliographical references and index | ||
650 | 4 | |a Silicon carbide |x Electric properties | |
650 | 4 | |a Semiconductors | |
700 | 1 | |a Shur, Michael |e Sonstige |4 oth | |
700 | 1 | |a Rumyantsev, Sergey L. |e Sonstige |4 oth | |
700 | 1 | |a Levinshteĭn, M. E. |e Sonstige |4 oth | |
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Datensatz im Suchindex
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id | DE-604.BV044178862 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T07:45:55Z |
institution | BVB |
isbn | 9812568352 9789812568359 9789812773371 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029585707 |
oclc_num | 182664344 |
open_access_boolean | |
physical | viii, 335 p. |
psigel | ZDB-30-PAD |
publishDate | 2006 |
publishDateSearch | 2006 |
publishDateSort | 2006 |
publisher | World Scientific |
record_format | marc |
series2 | Selected topics in electronics and systems |
spelling | SiC materials and devices, Vol. 1 edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein New Jersey World Scientific 2006 viii, 335 p. txt rdacontent c rdamedia cr rdacarrier Selected topics in electronics and systems v. 40 Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner Includes bibliographical references and index Silicon carbide Electric properties Semiconductors Shur, Michael Sonstige oth Rumyantsev, Sergey L. Sonstige oth Levinshteĭn, M. E. Sonstige oth |
spellingShingle | SiC materials and devices, Vol. 1 Silicon carbide Electric properties Semiconductors |
title | SiC materials and devices, Vol. 1 |
title_auth | SiC materials and devices, Vol. 1 |
title_exact_search | SiC materials and devices, Vol. 1 |
title_full | SiC materials and devices, Vol. 1 edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
title_fullStr | SiC materials and devices, Vol. 1 edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
title_full_unstemmed | SiC materials and devices, Vol. 1 edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
title_short | SiC materials and devices, Vol. 1 |
title_sort | sic materials and devices vol 1 |
topic | Silicon carbide Electric properties Semiconductors |
topic_facet | Silicon carbide Electric properties Semiconductors |
work_keys_str_mv | AT shurmichael sicmaterialsanddevicesvol1 AT rumyantsevsergeyl sicmaterialsanddevicesvol1 AT levinshteinme sicmaterialsanddevicesvol1 |