MOSFET modeling for circuit analysis and design:
Gespeichert in:
1. Verfasser: | |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Singapore
World Scientific
c2007
|
Schriftenreihe: | International series on advances in solid state electronics and technology
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Schlagworte: | |
Beschreibung: | Includes bibliographical references and index |
Beschreibung: | xxiv, 418 p. |
ISBN: | 9812568107 9789812568106 |
Internformat
MARC
LEADER | 00000nmm a2200000zc 4500 | ||
---|---|---|---|
001 | BV044126803 | ||
003 | DE-604 | ||
005 | 00000000000000.0 | ||
007 | cr|uuu---uuuuu | ||
008 | 170217s2007 |||| o||u| ||||||eng d | ||
020 | |a 9812568107 |9 981-256-810-7 | ||
020 | |a 9789812568106 |9 978-981-256-810-6 | ||
035 | |a (ZDB-30-PAD)EBC312288 | ||
035 | |a (ZDB-89-EBL)EBL312288 | ||
035 | |a (OCoLC)648317008 | ||
035 | |a (DE-599)BVBBV044126803 | ||
040 | |a DE-604 |b ger |e aacr | ||
041 | 0 | |a eng | |
082 | 0 | |a 621.3815284 |2 22 | |
100 | 1 | |a Galup-Montoro, Carlos |e Verfasser |4 aut | |
245 | 1 | 0 | |a MOSFET modeling for circuit analysis and design |c Carlos Galup-Montoro, Márcio Cherem Schneider |
264 | 1 | |a Singapore |b World Scientific |c c2007 | |
300 | |a xxiv, 418 p. | ||
336 | |b txt |2 rdacontent | ||
337 | |b c |2 rdamedia | ||
338 | |b cr |2 rdacarrier | ||
490 | 0 | |a International series on advances in solid state electronics and technology | |
500 | |a Includes bibliographical references and index | ||
650 | 4 | |a Mathematisches Modell | |
650 | 4 | |a Metal oxide semiconductor field-effect transistors |x Mathematical models | |
650 | 4 | |a Field-effect transistors |x Mathematical models | |
650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Schaltungsentwurf |0 (DE-588)4179389-4 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
689 | 0 | 1 | |a Schaltungsentwurf |0 (DE-588)4179389-4 |D s |
689 | 0 | |8 1\p |5 DE-604 | |
700 | 1 | |a Schneider, Márcio Cherem |e Sonstige |4 oth | |
912 | |a ZDB-30-PAD | ||
999 | |a oai:aleph.bib-bvb.de:BVB01-029533648 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
_version_ | 1804177212215132160 |
---|---|
any_adam_object | |
author | Galup-Montoro, Carlos |
author_facet | Galup-Montoro, Carlos |
author_role | aut |
author_sort | Galup-Montoro, Carlos |
author_variant | c g m cgm |
building | Verbundindex |
bvnumber | BV044126803 |
collection | ZDB-30-PAD |
ctrlnum | (ZDB-30-PAD)EBC312288 (ZDB-89-EBL)EBL312288 (OCoLC)648317008 (DE-599)BVBBV044126803 |
dewey-full | 621.3815284 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815284 |
dewey-search | 621.3815284 |
dewey-sort | 3621.3815284 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Electronic eBook |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01660nmm a2200445zc 4500</leader><controlfield tag="001">BV044126803</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">170217s2007 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812568107</subfield><subfield code="9">981-256-810-7</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789812568106</subfield><subfield code="9">978-981-256-810-6</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-30-PAD)EBC312288</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-89-EBL)EBL312288</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)648317008</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV044126803</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815284</subfield><subfield code="2">22</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Galup-Montoro, Carlos</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">MOSFET modeling for circuit analysis and design</subfield><subfield code="c">Carlos Galup-Montoro, Márcio Cherem Schneider</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Singapore</subfield><subfield code="b">World Scientific</subfield><subfield code="c">c2007</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">xxiv, 418 p.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">International series on advances in solid state electronics and technology</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Mathematisches Modell</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductor field-effect transistors</subfield><subfield code="x">Mathematical models</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Field-effect transistors</subfield><subfield code="x">Mathematical models</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Schaltungsentwurf</subfield><subfield code="0">(DE-588)4179389-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Schaltungsentwurf</subfield><subfield code="0">(DE-588)4179389-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Schneider, Márcio Cherem</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-30-PAD</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-029533648</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
id | DE-604.BV044126803 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T07:44:29Z |
institution | BVB |
isbn | 9812568107 9789812568106 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029533648 |
oclc_num | 648317008 |
open_access_boolean | |
physical | xxiv, 418 p. |
psigel | ZDB-30-PAD |
publishDate | 2007 |
publishDateSearch | 2007 |
publishDateSort | 2007 |
publisher | World Scientific |
record_format | marc |
series2 | International series on advances in solid state electronics and technology |
spelling | Galup-Montoro, Carlos Verfasser aut MOSFET modeling for circuit analysis and design Carlos Galup-Montoro, Márcio Cherem Schneider Singapore World Scientific c2007 xxiv, 418 p. txt rdacontent c rdamedia cr rdacarrier International series on advances in solid state electronics and technology Includes bibliographical references and index Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd rswk-swf Schaltungsentwurf (DE-588)4179389-4 gnd rswk-swf MOS-FET (DE-588)4207266-9 s Schaltungsentwurf (DE-588)4179389-4 s 1\p DE-604 Schneider, Márcio Cherem Sonstige oth 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Galup-Montoro, Carlos MOSFET modeling for circuit analysis and design Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd Schaltungsentwurf (DE-588)4179389-4 gnd |
subject_GND | (DE-588)4207266-9 (DE-588)4179389-4 |
title | MOSFET modeling for circuit analysis and design |
title_auth | MOSFET modeling for circuit analysis and design |
title_exact_search | MOSFET modeling for circuit analysis and design |
title_full | MOSFET modeling for circuit analysis and design Carlos Galup-Montoro, Márcio Cherem Schneider |
title_fullStr | MOSFET modeling for circuit analysis and design Carlos Galup-Montoro, Márcio Cherem Schneider |
title_full_unstemmed | MOSFET modeling for circuit analysis and design Carlos Galup-Montoro, Márcio Cherem Schneider |
title_short | MOSFET modeling for circuit analysis and design |
title_sort | mosfet modeling for circuit analysis and design |
topic | Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd Schaltungsentwurf (DE-588)4179389-4 gnd |
topic_facet | Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Field-effect transistors Mathematical models MOS-FET Schaltungsentwurf |
work_keys_str_mv | AT galupmontorocarlos mosfetmodelingforcircuitanalysisanddesign AT schneidermarciocherem mosfetmodelingforcircuitanalysisanddesign |