Breakdown phenomena in semiconductors and semiconductor devices:
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
New Jersey
World Scientific
c2005
|
Schriftenreihe: | Selected topics in electronics and systems
v. 36 |
Schlagworte: | |
Beschreibung: | Includes bibliographical references and indexes |
Beschreibung: | xiii, 208 p. |
ISBN: | 9812563954 |
Internformat
MARC
LEADER | 00000nmm a2200000zcb4500 | ||
---|---|---|---|
001 | BV044124604 | ||
003 | DE-604 | ||
005 | 00000000000000.0 | ||
007 | cr|uuu---uuuuu | ||
008 | 170217s2005 |||| o||u| ||||||eng d | ||
020 | |a 9812563954 |9 981-256-395-4 | ||
035 | |a (ZDB-30-PAD)EBC296079 | ||
035 | |a (ZDB-89-EBL)EBL296079 | ||
035 | |a (OCoLC)476063254 | ||
035 | |a (DE-599)BVBBV044124604 | ||
040 | |a DE-604 |b ger |e aacr | ||
041 | 0 | |a eng | |
082 | 0 | |a 621.38152 | |
100 | 1 | |a Levinshteĭn, M. E. |e Verfasser |4 aut | |
245 | 1 | 0 | |a Breakdown phenomena in semiconductors and semiconductor devices |c Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein |
264 | 1 | |a New Jersey |b World Scientific |c c2005 | |
300 | |a xiii, 208 p. | ||
336 | |b txt |2 rdacontent | ||
337 | |b c |2 rdamedia | ||
338 | |b cr |2 rdacarrier | ||
490 | 0 | |a Selected topics in electronics and systems |v v. 36 | |
500 | |a Includes bibliographical references and indexes | ||
650 | 4 | |a Semiconductors | |
650 | 4 | |a Breakdown (Electricity) | |
650 | 4 | |a High voltages | |
650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Elektrischer Durchbruch |0 (DE-588)4272300-0 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
655 | 7 | |8 1\p |0 (DE-588)4006432-3 |a Bibliografie |2 gnd-content | |
689 | 0 | 0 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
689 | 0 | 1 | |a Elektrischer Durchbruch |0 (DE-588)4272300-0 |D s |
689 | 0 | |8 2\p |5 DE-604 | |
689 | 1 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
689 | 1 | 1 | |a Elektrischer Durchbruch |0 (DE-588)4272300-0 |D s |
689 | 1 | |8 3\p |5 DE-604 | |
700 | 1 | |a Kostamovaara, Juha |e Sonstige |4 oth | |
700 | 1 | |a Vainshtein, Sergey |e Sonstige |4 oth | |
912 | |a ZDB-30-PAD | ||
999 | |a oai:aleph.bib-bvb.de:BVB01-029531449 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 3\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
_version_ | 1804177208236834816 |
---|---|
any_adam_object | |
author | Levinshteĭn, M. E. |
author_facet | Levinshteĭn, M. E. |
author_role | aut |
author_sort | Levinshteĭn, M. E. |
author_variant | m e l me mel |
building | Verbundindex |
bvnumber | BV044124604 |
collection | ZDB-30-PAD |
ctrlnum | (ZDB-30-PAD)EBC296079 (ZDB-89-EBL)EBL296079 (OCoLC)476063254 (DE-599)BVBBV044124604 |
dewey-full | 621.38152 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.38152 |
dewey-search | 621.38152 |
dewey-sort | 3621.38152 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Electronic eBook |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02040nmm a2200529zcb4500</leader><controlfield tag="001">BV044124604</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">170217s2005 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812563954</subfield><subfield code="9">981-256-395-4</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-30-PAD)EBC296079</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-89-EBL)EBL296079</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)476063254</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV044124604</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.38152</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Levinshteĭn, M. E.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Breakdown phenomena in semiconductors and semiconductor devices</subfield><subfield code="c">Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New Jersey</subfield><subfield code="b">World Scientific</subfield><subfield code="c">c2005</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">xiii, 208 p.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Selected topics in electronics and systems</subfield><subfield code="v">v. 36</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and indexes</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Breakdown (Electricity)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">High voltages</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Elektrischer Durchbruch</subfield><subfield code="0">(DE-588)4272300-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="8">1\p</subfield><subfield code="0">(DE-588)4006432-3</subfield><subfield code="a">Bibliografie</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Elektrischer Durchbruch</subfield><subfield code="0">(DE-588)4272300-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Elektrischer Durchbruch</subfield><subfield code="0">(DE-588)4272300-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kostamovaara, Juha</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Vainshtein, Sergey</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-30-PAD</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-029531449</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
genre | 1\p (DE-588)4006432-3 Bibliografie gnd-content |
genre_facet | Bibliografie |
id | DE-604.BV044124604 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T07:44:25Z |
institution | BVB |
isbn | 9812563954 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029531449 |
oclc_num | 476063254 |
open_access_boolean | |
physical | xiii, 208 p. |
psigel | ZDB-30-PAD |
publishDate | 2005 |
publishDateSearch | 2005 |
publishDateSort | 2005 |
publisher | World Scientific |
record_format | marc |
series2 | Selected topics in electronics and systems |
spelling | Levinshteĭn, M. E. Verfasser aut Breakdown phenomena in semiconductors and semiconductor devices Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein New Jersey World Scientific c2005 xiii, 208 p. txt rdacontent c rdamedia cr rdacarrier Selected topics in electronics and systems v. 36 Includes bibliographical references and indexes Semiconductors Breakdown (Electricity) High voltages Halbleiter (DE-588)4022993-2 gnd rswk-swf Elektrischer Durchbruch (DE-588)4272300-0 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf 1\p (DE-588)4006432-3 Bibliografie gnd-content Halbleiterbauelement (DE-588)4113826-0 s Elektrischer Durchbruch (DE-588)4272300-0 s 2\p DE-604 Halbleiter (DE-588)4022993-2 s 3\p DE-604 Kostamovaara, Juha Sonstige oth Vainshtein, Sergey Sonstige oth 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Levinshteĭn, M. E. Breakdown phenomena in semiconductors and semiconductor devices Semiconductors Breakdown (Electricity) High voltages Halbleiter (DE-588)4022993-2 gnd Elektrischer Durchbruch (DE-588)4272300-0 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
subject_GND | (DE-588)4022993-2 (DE-588)4272300-0 (DE-588)4113826-0 (DE-588)4006432-3 |
title | Breakdown phenomena in semiconductors and semiconductor devices |
title_auth | Breakdown phenomena in semiconductors and semiconductor devices |
title_exact_search | Breakdown phenomena in semiconductors and semiconductor devices |
title_full | Breakdown phenomena in semiconductors and semiconductor devices Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein |
title_fullStr | Breakdown phenomena in semiconductors and semiconductor devices Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein |
title_full_unstemmed | Breakdown phenomena in semiconductors and semiconductor devices Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein |
title_short | Breakdown phenomena in semiconductors and semiconductor devices |
title_sort | breakdown phenomena in semiconductors and semiconductor devices |
topic | Semiconductors Breakdown (Electricity) High voltages Halbleiter (DE-588)4022993-2 gnd Elektrischer Durchbruch (DE-588)4272300-0 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
topic_facet | Semiconductors Breakdown (Electricity) High voltages Halbleiter Elektrischer Durchbruch Halbleiterbauelement Bibliografie |
work_keys_str_mv | AT levinshteinme breakdownphenomenainsemiconductorsandsemiconductordevices AT kostamovaarajuha breakdownphenomenainsemiconductorsandsemiconductordevices AT vainshteinsergey breakdownphenomenainsemiconductorsandsemiconductordevices |