Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO: Application to Displays
Gespeichert in:
| Weitere Verfasser: | , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
[United Kingdom]
Wiley
2016
|
| Ausgabe: | 1st |
| Schriftenreihe: | Wiley SID series in display technology
|
| Schlagworte: | |
| Online-Zugang: | FRO01 UBG01 URL des Erstveröffentlichers |
| Beschreibung: | About the Editors Notes on contributors Series editor's foreword Preface Acknowledgements 1 Introduction 1.1 History of Displays 1.2 Requirement for Displays 1.3 Transistor Technology for Displays 1.3.1 Comparison of Silicon and Oxide Semiconductors 1.3.2 FETs in LCDs 1.3.3 FETs in OLED Displays 1.3.4 Recent CAAC-IGZO FET Technologies 1.3.5 Development of OLED Displays Using CAAC-IGZO 2 Applications of CAAC-IGZO FETs to Displays 2.1 Introduction 2.2 Bottom-gate Top-contact FET 2.2.1 Manufacturing Process for CAAC-IGZO FETs with Channel-etch Type of BGTC Structure 2.2.2 GI Formation 2.2.3 Formation of Buried Channel by Stacked Active Layer IGZO 2.2.4 Baking Treatment of CAAC-IGZO 2.2.5 Damaged Layer ( n -type) Formed by Deposition of S/D Electrodes 2.2.6 Cleaning of the Back Channel 2.2.7 Copper Wiring. - for S/D Electrodes 2.3 Top-gate Self-aligned FET 2.3.1 Fabrication Process of TGSA CAAC-IGZO FETs 2.3.2 Formation of GE/GI Patterns 2.3.3 Formation of S/D Regions 2.3.4 GI Thinning and L Reduction 2.4 Characteristics of CAAC-IGZO FET 2.4.1 Current Drivability 2.4.2 Low Off-state Current 2.4.3 Normally-off I <sub>d</sub>- V <sub>d</sub> Characteristics and Small Threshold-voltage Variation 2.4.4 Saturability of I <sub>d</sub>- V <sub>d</sub> Characteristics 2.4.5 Summary 2.5 Density of States and Device Reliability 2.5.1 Introduction 2.5.2 Measurement of Defect States in IGZO Film 2.5.3 Correlation between Oxygen Vacancies and FET Characteristics 2.5.4 Defect States in Silicon Oxide Film 2.5.5 NBIS Mechanism 2.5.6 Summary 2.6 Oxide Conductor Electrode Process 2.6.1 Introduction 2.6.2 Method of Fabricating Oxide. - Conductor Electrode and Measurements of Its Resistivity 2.6.3 Liquid Crystal Display Device with Oxide Conductor Electrode 2.6.4 Summary 3 Driver Circuit 3.1 Introduction 3.2. - Top Emission, and Color Filter (WTC) Structure 4.3.3 Measures for Crosstalk 4.4 Circuit Design for OLED Displays 4.4.1 Driving OLED Displays 4.4.2 External Compensation 4.4.3 |
| Beschreibung: | 1 online resource (432 pages) |
| ISBN: | 9781119247395 111924739X 9781119247487 1119247489 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV043980910 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 161227s2016 |||| o||u| ||||||eng d | ||
| 020 | |a 9781119247395 |c Online |9 978-1-119-24739-5 | ||
| 020 | |a 111924739X |9 1-119-24739-X | ||
| 020 | |a 9781119247487 |9 978-1-119-24748-7 | ||
| 020 | |a 1119247489 |9 1-119-24748-9 | ||
| 035 | |a (ZDB-35-WIC)ocn964360931 | ||
| 035 | |a (OCoLC)968749581 | ||
| 035 | |a (DE-599)BVBBV043980910 | ||
| 040 | |a DE-604 |b ger |e rda | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-861 | ||
| 082 | 0 | |a 621.3815/2 | |
| 100 | 1 | |a Yamazaki, Shunpei |4 edt | |
| 245 | 1 | 0 | |a Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO |b Application to Displays |c Shunpei Yamazaki, Tetsuo Tsutsui |
| 250 | |a 1st | ||
| 264 | 1 | |a [United Kingdom] |b Wiley |c 2016 | |
| 300 | |a 1 online resource (432 pages) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a Wiley SID series in display technology | |
| 500 | |a About the Editors Notes on contributors Series editor's foreword Preface Acknowledgements 1 Introduction 1.1 History of Displays 1.2 Requirement for Displays 1.3 Transistor Technology for Displays 1.3.1 Comparison of Silicon and Oxide Semiconductors 1.3.2 FETs in LCDs 1.3.3 FETs in OLED Displays 1.3.4 Recent CAAC-IGZO FET Technologies 1.3.5 Development of OLED Displays Using CAAC-IGZO 2 Applications of CAAC-IGZO FETs to Displays 2.1 Introduction 2.2 Bottom-gate Top-contact FET 2.2.1 Manufacturing Process for CAAC-IGZO FETs with Channel-etch Type of BGTC Structure 2.2.2 GI Formation 2.2.3 Formation of Buried Channel by Stacked Active Layer IGZO 2.2.4 Baking Treatment of CAAC-IGZO 2.2.5 Damaged Layer ( n -type) Formed by Deposition of S/D Electrodes 2.2.6 Cleaning of the Back Channel 2.2.7 Copper Wiring. - for S/D Electrodes 2.3 Top-gate Self-aligned FET 2.3.1 Fabrication Process of TGSA CAAC-IGZO FETs 2.3.2 Formation of GE/GI Patterns 2.3.3 Formation of S/D Regions 2.3.4 GI Thinning and L Reduction 2.4 Characteristics of CAAC-IGZO FET 2.4.1 Current Drivability 2.4.2 Low Off-state Current 2.4.3 Normally-off I <sub>d</sub>- V <sub>d</sub> Characteristics and Small Threshold-voltage Variation 2.4.4 Saturability of I <sub>d</sub>- V <sub>d</sub> Characteristics 2.4.5 Summary 2.5 Density of States and Device Reliability 2.5.1 Introduction 2.5.2 Measurement of Defect States in IGZO Film 2.5.3 Correlation between Oxygen Vacancies and FET Characteristics 2.5.4 Defect States in Silicon Oxide Film 2.5.5 NBIS Mechanism 2.5.6 Summary 2.6 Oxide Conductor Electrode Process 2.6.1 Introduction 2.6.2 Method of Fabricating Oxide. - Conductor Electrode and Measurements of Its Resistivity 2.6.3 Liquid Crystal Display Device with Oxide Conductor Electrode 2.6.4 Summary 3 Driver Circuit 3.1 Introduction 3.2. - Top Emission, and Color Filter (WTC) Structure 4.3.3 Measures for Crosstalk 4.4 Circuit Design for OLED Displays 4.4.1 Driving OLED Displays 4.4.2 External Compensation 4.4.3 | ||
| 650 | 4 | |a Semiconductors / Materials | |
| 650 | 4 | |a Semiconductors / Characterization | |
| 650 | 4 | |a Gallium compounds | |
| 650 | 4 | |a Electroluminescent display systems / Materials | |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Flexible Leiterplatte |0 (DE-588)4317748-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Display |0 (DE-588)4129694-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Flexible Struktur |0 (DE-588)4399238-9 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Display |0 (DE-588)4129694-1 |D s |
| 689 | 0 | 2 | |a Flexible Struktur |0 (DE-588)4399238-9 |D s |
| 689 | 0 | 3 | |a Flexible Leiterplatte |0 (DE-588)4317748-7 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Tsutsui, Tetsuo |4 edt | |
| 856 | 4 | 0 | |u https://onlinelibrary.wiley.com/doi/book/10.1002/9781119247395 |x Verlag |z URL des Erstveröffentlichers |3 Volltext |
| 912 | |a ZDB-35-WIC | ||
| 940 | 1 | |q UBG_PDA_WIC | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-029389340 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 966 | e | |u https://onlinelibrary.wiley.com/doi/book/10.1002/9781119247395 |l FRO01 |p ZDB-35-WIC |q FRO_PDA_WIC |x Verlag |3 Volltext | |
| 966 | e | |u https://onlinelibrary.wiley.com/doi/book/10.1002/9781119247395 |l UBG01 |p ZDB-35-WIC |q UBG_PDA_WIC |x Verlag |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804176947344834560 |
|---|---|
| any_adam_object | |
| author2 | Yamazaki, Shunpei Tsutsui, Tetsuo |
| author2_role | edt edt |
| author2_variant | s y sy t t tt |
| author_facet | Yamazaki, Shunpei Tsutsui, Tetsuo |
| building | Verbundindex |
| bvnumber | BV043980910 |
| collection | ZDB-35-WIC |
| ctrlnum | (ZDB-35-WIC)ocn964360931 (OCoLC)968749581 (DE-599)BVBBV043980910 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 1st |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>04339nmm a2200589zc 4500</leader><controlfield tag="001">BV043980910</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">161227s2016 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781119247395</subfield><subfield code="c">Online</subfield><subfield code="9">978-1-119-24739-5</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">111924739X</subfield><subfield code="9">1-119-24739-X</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781119247487</subfield><subfield code="9">978-1-119-24748-7</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1119247489</subfield><subfield code="9">1-119-24748-9</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-35-WIC)ocn964360931</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)968749581</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV043980910</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-861</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Yamazaki, Shunpei</subfield><subfield code="4">edt</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO</subfield><subfield code="b">Application to Displays</subfield><subfield code="c">Shunpei Yamazaki, Tetsuo Tsutsui</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">1st</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">[United Kingdom]</subfield><subfield code="b">Wiley</subfield><subfield code="c">2016</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (432 pages)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Wiley SID series in display technology</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">About the Editors Notes on contributors Series editor's foreword Preface Acknowledgements 1 Introduction 1.1 History of Displays 1.2 Requirement for Displays 1.3 Transistor Technology for Displays 1.3.1 Comparison of Silicon and Oxide Semiconductors 1.3.2 FETs in LCDs 1.3.3 FETs in OLED Displays 1.3.4 Recent CAAC-IGZO FET Technologies 1.3.5 Development of OLED Displays Using CAAC-IGZO 2 Applications of CAAC-IGZO FETs to Displays 2.1 Introduction 2.2 Bottom-gate Top-contact FET 2.2.1 Manufacturing Process for CAAC-IGZO FETs with Channel-etch Type of BGTC Structure 2.2.2 GI Formation 2.2.3 Formation of Buried Channel by Stacked Active Layer IGZO 2.2.4 Baking Treatment of CAAC-IGZO 2.2.5 Damaged Layer ( n -type) Formed by Deposition of S/D Electrodes 2.2.6 Cleaning of the Back Channel 2.2.7 Copper Wiring. - for S/D Electrodes 2.3 Top-gate Self-aligned FET 2.3.1 Fabrication Process of TGSA CAAC-IGZO FETs 2.3.2 Formation of GE/GI Patterns 2.3.3 Formation of S/D Regions 2.3.4 GI Thinning and L Reduction 2.4 Characteristics of CAAC-IGZO FET 2.4.1 Current Drivability 2.4.2 Low Off-state Current 2.4.3 Normally-off I <sub>d</sub>- V <sub>d</sub> Characteristics and Small Threshold-voltage Variation 2.4.4 Saturability of I <sub>d</sub>- V <sub>d</sub> Characteristics 2.4.5 Summary 2.5 Density of States and Device Reliability 2.5.1 Introduction 2.5.2 Measurement of Defect States in IGZO Film 2.5.3 Correlation between Oxygen Vacancies and FET Characteristics 2.5.4 Defect States in Silicon Oxide Film 2.5.5 NBIS Mechanism 2.5.6 Summary 2.6 Oxide Conductor Electrode Process 2.6.1 Introduction 2.6.2 Method of Fabricating Oxide. - Conductor Electrode and Measurements of Its Resistivity 2.6.3 Liquid Crystal Display Device with Oxide Conductor Electrode 2.6.4 Summary 3 Driver Circuit 3.1 Introduction 3.2. - Top Emission, and Color Filter (WTC) Structure 4.3.3 Measures for Crosstalk 4.4 Circuit Design for OLED Displays 4.4.1 Driving OLED Displays 4.4.2 External Compensation 4.4.3</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors / Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors / Characterization</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gallium compounds</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electroluminescent display systems / Materials</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Flexible Leiterplatte</subfield><subfield code="0">(DE-588)4317748-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Display</subfield><subfield code="0">(DE-588)4129694-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Flexible Struktur</subfield><subfield code="0">(DE-588)4399238-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Display</subfield><subfield code="0">(DE-588)4129694-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Flexible Struktur</subfield><subfield code="0">(DE-588)4399238-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Flexible Leiterplatte</subfield><subfield code="0">(DE-588)4317748-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tsutsui, Tetsuo</subfield><subfield code="4">edt</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://onlinelibrary.wiley.com/doi/book/10.1002/9781119247395</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveröffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-35-WIC</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">UBG_PDA_WIC</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-029389340</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://onlinelibrary.wiley.com/doi/book/10.1002/9781119247395</subfield><subfield code="l">FRO01</subfield><subfield code="p">ZDB-35-WIC</subfield><subfield code="q">FRO_PDA_WIC</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://onlinelibrary.wiley.com/doi/book/10.1002/9781119247395</subfield><subfield code="l">UBG01</subfield><subfield code="p">ZDB-35-WIC</subfield><subfield code="q">UBG_PDA_WIC</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV043980910 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:40:16Z |
| institution | BVB |
| isbn | 9781119247395 111924739X 9781119247487 1119247489 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029389340 |
| oclc_num | 964360931 968749581 |
| open_access_boolean | |
| owner | DE-861 |
| owner_facet | DE-861 |
| physical | 1 online resource (432 pages) |
| psigel | ZDB-35-WIC UBG_PDA_WIC ZDB-35-WIC FRO_PDA_WIC ZDB-35-WIC UBG_PDA_WIC |
| publishDate | 2016 |
| publishDateSearch | 2016 |
| publishDateSort | 2016 |
| publisher | Wiley |
| record_format | marc |
| series2 | Wiley SID series in display technology |
| spelling | Yamazaki, Shunpei edt Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO Application to Displays Shunpei Yamazaki, Tetsuo Tsutsui 1st [United Kingdom] Wiley 2016 1 online resource (432 pages) txt rdacontent c rdamedia cr rdacarrier Wiley SID series in display technology About the Editors Notes on contributors Series editor's foreword Preface Acknowledgements 1 Introduction 1.1 History of Displays 1.2 Requirement for Displays 1.3 Transistor Technology for Displays 1.3.1 Comparison of Silicon and Oxide Semiconductors 1.3.2 FETs in LCDs 1.3.3 FETs in OLED Displays 1.3.4 Recent CAAC-IGZO FET Technologies 1.3.5 Development of OLED Displays Using CAAC-IGZO 2 Applications of CAAC-IGZO FETs to Displays 2.1 Introduction 2.2 Bottom-gate Top-contact FET 2.2.1 Manufacturing Process for CAAC-IGZO FETs with Channel-etch Type of BGTC Structure 2.2.2 GI Formation 2.2.3 Formation of Buried Channel by Stacked Active Layer IGZO 2.2.4 Baking Treatment of CAAC-IGZO 2.2.5 Damaged Layer ( n -type) Formed by Deposition of S/D Electrodes 2.2.6 Cleaning of the Back Channel 2.2.7 Copper Wiring. - for S/D Electrodes 2.3 Top-gate Self-aligned FET 2.3.1 Fabrication Process of TGSA CAAC-IGZO FETs 2.3.2 Formation of GE/GI Patterns 2.3.3 Formation of S/D Regions 2.3.4 GI Thinning and L Reduction 2.4 Characteristics of CAAC-IGZO FET 2.4.1 Current Drivability 2.4.2 Low Off-state Current 2.4.3 Normally-off I <sub>d</sub>- V <sub>d</sub> Characteristics and Small Threshold-voltage Variation 2.4.4 Saturability of I <sub>d</sub>- V <sub>d</sub> Characteristics 2.4.5 Summary 2.5 Density of States and Device Reliability 2.5.1 Introduction 2.5.2 Measurement of Defect States in IGZO Film 2.5.3 Correlation between Oxygen Vacancies and FET Characteristics 2.5.4 Defect States in Silicon Oxide Film 2.5.5 NBIS Mechanism 2.5.6 Summary 2.6 Oxide Conductor Electrode Process 2.6.1 Introduction 2.6.2 Method of Fabricating Oxide. - Conductor Electrode and Measurements of Its Resistivity 2.6.3 Liquid Crystal Display Device with Oxide Conductor Electrode 2.6.4 Summary 3 Driver Circuit 3.1 Introduction 3.2. - Top Emission, and Color Filter (WTC) Structure 4.3.3 Measures for Crosstalk 4.4 Circuit Design for OLED Displays 4.4.1 Driving OLED Displays 4.4.2 External Compensation 4.4.3 Semiconductors / Materials Semiconductors / Characterization Gallium compounds Electroluminescent display systems / Materials Halbleiter (DE-588)4022993-2 gnd rswk-swf Flexible Leiterplatte (DE-588)4317748-7 gnd rswk-swf Display (DE-588)4129694-1 gnd rswk-swf Flexible Struktur (DE-588)4399238-9 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Display (DE-588)4129694-1 s Flexible Struktur (DE-588)4399238-9 s Flexible Leiterplatte (DE-588)4317748-7 s 1\p DE-604 Tsutsui, Tetsuo edt https://onlinelibrary.wiley.com/doi/book/10.1002/9781119247395 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO Application to Displays Semiconductors / Materials Semiconductors / Characterization Gallium compounds Electroluminescent display systems / Materials Halbleiter (DE-588)4022993-2 gnd Flexible Leiterplatte (DE-588)4317748-7 gnd Display (DE-588)4129694-1 gnd Flexible Struktur (DE-588)4399238-9 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4317748-7 (DE-588)4129694-1 (DE-588)4399238-9 |
| title | Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO Application to Displays |
| title_auth | Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO Application to Displays |
| title_exact_search | Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO Application to Displays |
| title_full | Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO Application to Displays Shunpei Yamazaki, Tetsuo Tsutsui |
| title_fullStr | Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO Application to Displays Shunpei Yamazaki, Tetsuo Tsutsui |
| title_full_unstemmed | Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO Application to Displays Shunpei Yamazaki, Tetsuo Tsutsui |
| title_short | Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO |
| title_sort | physics and technology of crystalline oxide semiconductor caac igzo application to displays |
| title_sub | Application to Displays |
| topic | Semiconductors / Materials Semiconductors / Characterization Gallium compounds Electroluminescent display systems / Materials Halbleiter (DE-588)4022993-2 gnd Flexible Leiterplatte (DE-588)4317748-7 gnd Display (DE-588)4129694-1 gnd Flexible Struktur (DE-588)4399238-9 gnd |
| topic_facet | Semiconductors / Materials Semiconductors / Characterization Gallium compounds Electroluminescent display systems / Materials Halbleiter Flexible Leiterplatte Display Flexible Struktur |
| url | https://onlinelibrary.wiley.com/doi/book/10.1002/9781119247395 |
| work_keys_str_mv | AT yamazakishunpei physicsandtechnologyofcrystallineoxidesemiconductorcaacigzoapplicationtodisplays AT tsutsuitetsuo physicsandtechnologyofcrystallineoxidesemiconductorcaacigzoapplicationtodisplays |