Fundamentals of high-frequency CMOS analog integrated circuits:
With a design-centric approach, this textbook bridges the gap between fundamental analog electronic circuit textbooks and more advanced RF IC design texts. The major issues that must be taken into account when combining analog and digital circuit building blocks are covered, together with the key cr...
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Hauptverfasser: | , |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Cambridge
Cambridge University Press
2009
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Schlagworte: | |
Online-Zugang: | BSB01 FHN01 UBY01 Volltext |
Zusammenfassung: | With a design-centric approach, this textbook bridges the gap between fundamental analog electronic circuit textbooks and more advanced RF IC design texts. The major issues that must be taken into account when combining analog and digital circuit building blocks are covered, together with the key criteria and parameters that are used to describe system-level performance. Simple circuit models enable a robust understanding of high-frequency design fundamentals, and SPICE simulations are used to check results and fine-tune the design. With solved design examples to guide the reader through the decision process that accompanies each design task, this is an ideal textbook for senior undergraduate and graduate courses in RF CMOS circuits, RF circuit design, and high-frequency analog circuit design. Analog integrated circuit designers and RF circuit designers in industry who need help making design choices will also find this a practical and valuable reference |
Beschreibung: | Title from publisher's bibliographic system (viewed on 05 Oct 2015) |
Beschreibung: | 1 Online-Ressource (xiv, 302 Seiten) |
ISBN: | 9780511807121 |
DOI: | 10.1017/CBO9780511807121 |
Internformat
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505 | 8 | |a 1. Components of analog CMOS ICs -- 2. Basic MOS amplifiers: DC and low frequency behavior -- 3. High frequency behavior of basic amplifiers -- 4. Frequency selective RF circuits -- 5. LC oscillators -- 6. Signal converters for high frequencies (radio frequencies) -- A. Mobility degradation due to the transversal field -- B. Chararteristic curves and parameters of AMS 0.35 micron NMOS and PMOS transitors -- C. BSIM3-v3 parameters of AMS 0.35 micron NMOS and PMOS transitors -- D. Current sources and current mirrors | |
520 | |a With a design-centric approach, this textbook bridges the gap between fundamental analog electronic circuit textbooks and more advanced RF IC design texts. The major issues that must be taken into account when combining analog and digital circuit building blocks are covered, together with the key criteria and parameters that are used to describe system-level performance. Simple circuit models enable a robust understanding of high-frequency design fundamentals, and SPICE simulations are used to check results and fine-tune the design. With solved design examples to guide the reader through the decision process that accompanies each design task, this is an ideal textbook for senior undergraduate and graduate courses in RF CMOS circuits, RF circuit design, and high-frequency analog circuit design. Analog integrated circuit designers and RF circuit designers in industry who need help making design choices will also find this a practical and valuable reference | ||
650 | 4 | |a Metal oxide semiconductors, Complementary | |
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Datensatz im Suchindex
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any_adam_object | |
author | Leblebici, Duran Leblebici, Yusuf 1962- |
author_GND | (DE-588)13972513X |
author_facet | Leblebici, Duran Leblebici, Yusuf 1962- |
author_role | aut aut |
author_sort | Leblebici, Duran |
author_variant | d l dl y l yl |
building | Verbundindex |
bvnumber | BV043943833 |
classification_rvk | ZN 4960 |
collection | ZDB-20-CBO |
contents | 1. Components of analog CMOS ICs -- 2. Basic MOS amplifiers: DC and low frequency behavior -- 3. High frequency behavior of basic amplifiers -- 4. Frequency selective RF circuits -- 5. LC oscillators -- 6. Signal converters for high frequencies (radio frequencies) -- A. Mobility degradation due to the transversal field -- B. Chararteristic curves and parameters of AMS 0.35 micron NMOS and PMOS transitors -- C. BSIM3-v3 parameters of AMS 0.35 micron NMOS and PMOS transitors -- D. Current sources and current mirrors |
ctrlnum | (ZDB-20-CBO)CR9780511807121 (OCoLC)891442276 (DE-599)BVBBV043943833 |
dewey-full | 621.3815 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815 |
dewey-search | 621.3815 |
dewey-sort | 3621.3815 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
doi_str_mv | 10.1017/CBO9780511807121 |
format | Electronic eBook |
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id | DE-604.BV043943833 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T07:39:20Z |
institution | BVB |
isbn | 9780511807121 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029352804 |
oclc_num | 891442276 |
open_access_boolean | |
owner | DE-12 DE-92 DE-706 |
owner_facet | DE-12 DE-92 DE-706 |
physical | 1 Online-Ressource (xiv, 302 Seiten) |
psigel | ZDB-20-CBO ZDB-20-CBO BSB_PDA_CBO ZDB-20-CBO FHN_PDA_CBO ZDB-20-CBO UBY_PDA_CBO_Kauf22 |
publishDate | 2009 |
publishDateSearch | 2009 |
publishDateSort | 2009 |
publisher | Cambridge University Press |
record_format | marc |
spelling | Leblebici, Duran Verfasser aut Fundamentals of high-frequency CMOS analog integrated circuits Duran Leblebici, Yusuf Leblebici Cambridge Cambridge University Press 2009 1 Online-Ressource (xiv, 302 Seiten) txt rdacontent c rdamedia cr rdacarrier Title from publisher's bibliographic system (viewed on 05 Oct 2015) 1. Components of analog CMOS ICs -- 2. Basic MOS amplifiers: DC and low frequency behavior -- 3. High frequency behavior of basic amplifiers -- 4. Frequency selective RF circuits -- 5. LC oscillators -- 6. Signal converters for high frequencies (radio frequencies) -- A. Mobility degradation due to the transversal field -- B. Chararteristic curves and parameters of AMS 0.35 micron NMOS and PMOS transitors -- C. BSIM3-v3 parameters of AMS 0.35 micron NMOS and PMOS transitors -- D. Current sources and current mirrors With a design-centric approach, this textbook bridges the gap between fundamental analog electronic circuit textbooks and more advanced RF IC design texts. The major issues that must be taken into account when combining analog and digital circuit building blocks are covered, together with the key criteria and parameters that are used to describe system-level performance. Simple circuit models enable a robust understanding of high-frequency design fundamentals, and SPICE simulations are used to check results and fine-tune the design. With solved design examples to guide the reader through the decision process that accompanies each design task, this is an ideal textbook for senior undergraduate and graduate courses in RF CMOS circuits, RF circuit design, and high-frequency analog circuit design. Analog integrated circuit designers and RF circuit designers in industry who need help making design choices will also find this a practical and valuable reference Metal oxide semiconductors, Complementary Linear integrated circuits Analog electronic systems Very high speed integrated circuits Oscillators, Electric Analoge integrierte Schaltung (DE-588)4112519-8 gnd rswk-swf Analoge integrierte Schaltung (DE-588)4112519-8 s 1\p DE-604 Leblebici, Yusuf 1962- (DE-588)13972513X aut Erscheint auch als Druck-Ausgabe 978-0-521-51340-1 https://doi.org/10.1017/CBO9780511807121 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Leblebici, Duran Leblebici, Yusuf 1962- Fundamentals of high-frequency CMOS analog integrated circuits 1. Components of analog CMOS ICs -- 2. Basic MOS amplifiers: DC and low frequency behavior -- 3. High frequency behavior of basic amplifiers -- 4. Frequency selective RF circuits -- 5. LC oscillators -- 6. Signal converters for high frequencies (radio frequencies) -- A. Mobility degradation due to the transversal field -- B. Chararteristic curves and parameters of AMS 0.35 micron NMOS and PMOS transitors -- C. BSIM3-v3 parameters of AMS 0.35 micron NMOS and PMOS transitors -- D. Current sources and current mirrors Metal oxide semiconductors, Complementary Linear integrated circuits Analog electronic systems Very high speed integrated circuits Oscillators, Electric Analoge integrierte Schaltung (DE-588)4112519-8 gnd |
subject_GND | (DE-588)4112519-8 |
title | Fundamentals of high-frequency CMOS analog integrated circuits |
title_auth | Fundamentals of high-frequency CMOS analog integrated circuits |
title_exact_search | Fundamentals of high-frequency CMOS analog integrated circuits |
title_full | Fundamentals of high-frequency CMOS analog integrated circuits Duran Leblebici, Yusuf Leblebici |
title_fullStr | Fundamentals of high-frequency CMOS analog integrated circuits Duran Leblebici, Yusuf Leblebici |
title_full_unstemmed | Fundamentals of high-frequency CMOS analog integrated circuits Duran Leblebici, Yusuf Leblebici |
title_short | Fundamentals of high-frequency CMOS analog integrated circuits |
title_sort | fundamentals of high frequency cmos analog integrated circuits |
topic | Metal oxide semiconductors, Complementary Linear integrated circuits Analog electronic systems Very high speed integrated circuits Oscillators, Electric Analoge integrierte Schaltung (DE-588)4112519-8 gnd |
topic_facet | Metal oxide semiconductors, Complementary Linear integrated circuits Analog electronic systems Very high speed integrated circuits Oscillators, Electric Analoge integrierte Schaltung |
url | https://doi.org/10.1017/CBO9780511807121 |
work_keys_str_mv | AT leblebiciduran fundamentalsofhighfrequencycmosanalogintegratedcircuits AT leblebiciyusuf fundamentalsofhighfrequencycmosanalogintegratedcircuits |