Magnetic memory: fundamentals and technology
If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to mem...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Cambridge
Cambridge University Press
2010
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| Schlagworte: | |
| Online-Zugang: | BSB01 FHN01 Volltext |
| Zusammenfassung: | If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research |
| Beschreibung: | Title from publisher's bibliographic system (viewed on 05 Oct 2015) |
| Beschreibung: | 1 online resource (x, 196 pages) |
| ISBN: | 9780511676208 |
| DOI: | 10.1017/CBO9780511676208 |
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| 505 | 8 | |a Machine generated contents note: 1. Basic magnetostatics; 2. Magnetic films; 3. Properties of patterned ferromagnetic film; 4. Magnetoresistance effects and memory devices; 5. Field-write mode MRAMs; 6. Spin torque transfer MRAM; 7. Applications of MTJ based technology; Appendices: A. Unit conversion table cgs vs. SI; B. Dimensions of magnetism; C. Physical constants; D. Normal (Gaussian) distribution and quantile plot; E. Weibull distribution; F. TDDB reliability test of thin film; G. Binomial distribution and Poisson distribution; H. Defect density; I. Fe, Co, Ni element chemistry parameters; J. Soft error, hard fail and design margin | |
| 520 | |a If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research | ||
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Datensatz im Suchindex
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| contents | Machine generated contents note: 1. Basic magnetostatics; 2. Magnetic films; 3. Properties of patterned ferromagnetic film; 4. Magnetoresistance effects and memory devices; 5. Field-write mode MRAMs; 6. Spin torque transfer MRAM; 7. Applications of MTJ based technology; Appendices: A. Unit conversion table cgs vs. SI; B. Dimensions of magnetism; C. Physical constants; D. Normal (Gaussian) distribution and quantile plot; E. Weibull distribution; F. TDDB reliability test of thin film; G. Binomial distribution and Poisson distribution; H. Defect density; I. Fe, Co, Ni element chemistry parameters; J. Soft error, hard fail and design margin |
| ctrlnum | (ZDB-20-CBO)CR9780511676208 (OCoLC)967686583 (DE-599)BVBBV043943205 |
| dewey-full | 621.39/73 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.39/73 |
| dewey-search | 621.39/73 |
| dewey-sort | 3621.39 273 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1017/CBO9780511676208 |
| format | Electronic eBook |
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| indexdate | 2024-07-10T07:39:19Z |
| institution | BVB |
| isbn | 9780511676208 |
| language | English |
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| physical | 1 online resource (x, 196 pages) |
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| spelling | Tang, Denny D. Verfasser aut Magnetic memory fundamentals and technology Denny D. Tang, Yuan-Jen Lee Cambridge Cambridge University Press 2010 1 online resource (x, 196 pages) txt rdacontent c rdamedia cr rdacarrier Title from publisher's bibliographic system (viewed on 05 Oct 2015) Machine generated contents note: 1. Basic magnetostatics; 2. Magnetic films; 3. Properties of patterned ferromagnetic film; 4. Magnetoresistance effects and memory devices; 5. Field-write mode MRAMs; 6. Spin torque transfer MRAM; 7. Applications of MTJ based technology; Appendices: A. Unit conversion table cgs vs. SI; B. Dimensions of magnetism; C. Physical constants; D. Normal (Gaussian) distribution and quantile plot; E. Weibull distribution; F. TDDB reliability test of thin film; G. Binomial distribution and Poisson distribution; H. Defect density; I. Fe, Co, Ni element chemistry parameters; J. Soft error, hard fail and design margin If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research Magnetic memory (Computers) Magnetspeicher (DE-588)4168608-1 gnd rswk-swf Magnetspeicher (DE-588)4168608-1 s 1\p DE-604 Lee, Yuan-Jen Sonstige oth Erscheint auch als Druckausgabe 978-0-521-44964-9 https://doi.org/10.1017/CBO9780511676208 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Tang, Denny D. Magnetic memory fundamentals and technology Machine generated contents note: 1. Basic magnetostatics; 2. Magnetic films; 3. Properties of patterned ferromagnetic film; 4. Magnetoresistance effects and memory devices; 5. Field-write mode MRAMs; 6. Spin torque transfer MRAM; 7. Applications of MTJ based technology; Appendices: A. Unit conversion table cgs vs. SI; B. Dimensions of magnetism; C. Physical constants; D. Normal (Gaussian) distribution and quantile plot; E. Weibull distribution; F. TDDB reliability test of thin film; G. Binomial distribution and Poisson distribution; H. Defect density; I. Fe, Co, Ni element chemistry parameters; J. Soft error, hard fail and design margin Magnetic memory (Computers) Magnetspeicher (DE-588)4168608-1 gnd |
| subject_GND | (DE-588)4168608-1 |
| title | Magnetic memory fundamentals and technology |
| title_auth | Magnetic memory fundamentals and technology |
| title_exact_search | Magnetic memory fundamentals and technology |
| title_full | Magnetic memory fundamentals and technology Denny D. Tang, Yuan-Jen Lee |
| title_fullStr | Magnetic memory fundamentals and technology Denny D. Tang, Yuan-Jen Lee |
| title_full_unstemmed | Magnetic memory fundamentals and technology Denny D. Tang, Yuan-Jen Lee |
| title_short | Magnetic memory |
| title_sort | magnetic memory fundamentals and technology |
| title_sub | fundamentals and technology |
| topic | Magnetic memory (Computers) Magnetspeicher (DE-588)4168608-1 gnd |
| topic_facet | Magnetic memory (Computers) Magnetspeicher |
| url | https://doi.org/10.1017/CBO9780511676208 |
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