Doping in III-V semiconductors:
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial gr...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Cambridge
Cambridge University Press
1993
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| Schriftenreihe: | Cambridge studies in semiconductor physics and microelectronic engineering
1 |
| Schlagworte: | |
| Online-Zugang: | BSB01 FHN01 Volltext |
| Zusammenfassung: | This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III–V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities |
| Beschreibung: | Title from publisher's bibliographic system (viewed on 05 Oct 2015) |
| Beschreibung: | 1 online resource (xxii, 606 pages) |
| ISBN: | 9780511599828 |
| DOI: | 10.1017/CBO9780511599828 |
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| 520 | |a This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III–V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities | ||
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| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1017/CBO9780511599828 |
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| indexdate | 2024-07-10T07:39:16Z |
| institution | BVB |
| isbn | 9780511599828 |
| language | English |
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| spelling | Schubert, E. Fred Verfasser aut Doping in III-V semiconductors E. Fred Schubert Cambridge Cambridge University Press 1993 1 online resource (xxii, 606 pages) txt rdacontent c rdamedia cr rdacarrier Cambridge studies in semiconductor physics and microelectronic engineering 1 Title from publisher's bibliographic system (viewed on 05 Oct 2015) This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III–V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities Compound semiconductors Semiconductor doping Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Dotierung (DE-588)4130672-7 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 s Dotierung (DE-588)4130672-7 s 1\p DE-604 Erscheint auch als Druckausgabe 978-0-521-01784-8 Erscheint auch als Druckausgabe 978-0-521-41919-2 https://doi.org/10.1017/CBO9780511599828 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Schubert, E. Fred Doping in III-V semiconductors Compound semiconductors Semiconductor doping Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Dotierung (DE-588)4130672-7 gnd |
| subject_GND | (DE-588)4150649-2 (DE-588)4130672-7 |
| title | Doping in III-V semiconductors |
| title_auth | Doping in III-V semiconductors |
| title_exact_search | Doping in III-V semiconductors |
| title_full | Doping in III-V semiconductors E. Fred Schubert |
| title_fullStr | Doping in III-V semiconductors E. Fred Schubert |
| title_full_unstemmed | Doping in III-V semiconductors E. Fred Schubert |
| title_short | Doping in III-V semiconductors |
| title_sort | doping in iii v semiconductors |
| topic | Compound semiconductors Semiconductor doping Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Dotierung (DE-588)4130672-7 gnd |
| topic_facet | Compound semiconductors Semiconductor doping Drei-Fünf-Halbleiter Dotierung |
| url | https://doi.org/10.1017/CBO9780511599828 |
| work_keys_str_mv | AT schubertefred dopinginiiivsemiconductors |