Hydrogenated amorphous silicon:
This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the application...
Gespeichert in:
1. Verfasser: | |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Cambridge
Cambridge University Press
1991
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Schriftenreihe: | Cambridge solid state science series
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Schlagworte: | |
Online-Zugang: | BSB01 FHN01 Volltext |
Zusammenfassung: | This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the applications of this technologically very important material. There is also an important chapter on contacts, interfaces and multilayers. The main emphasis of the book is on the new physical phenomena which result from the disorder of the atomic structure. The book will be of major importance to those who are researching or studying the properties and applications of a-Si:H. It will have a wider interest for anyone working in semiconductor physics and electronic engineering in general |
Beschreibung: | Title from publisher's bibliographic system (viewed on 05 Oct 2015) |
Beschreibung: | 1 online resource (xiv, 417 pages) |
ISBN: | 9780511525247 |
DOI: | 10.1017/CBO9780511525247 |
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520 | |a This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the applications of this technologically very important material. There is also an important chapter on contacts, interfaces and multilayers. The main emphasis of the book is on the new physical phenomena which result from the disorder of the atomic structure. The book will be of major importance to those who are researching or studying the properties and applications of a-Si:H. It will have a wider interest for anyone working in semiconductor physics and electronic engineering in general | ||
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Datensatz im Suchindex
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---|---|
any_adam_object | |
author | Street, R. A. |
author_facet | Street, R. A. |
author_role | aut |
author_sort | Street, R. A. |
author_variant | r a s ra ras |
building | Verbundindex |
bvnumber | BV043941728 |
classification_rvk | UP 3160 |
collection | ZDB-20-CBO |
contents | 1. Introduction -- 2. Growth and structure of amorphous silicon -- 3. The electronic density of states -- 4. Defects and their electronic states -- 5. Substitutional doping -- 6. Defect reactions, thermal equilibrium and metastability -- 7. Electronic transport -- 8. Recombination of excess carriers -- 9. Contacts, interfaces and multilayers -- 10. Amorphous silicon device technology |
ctrlnum | (ZDB-20-CBO)CR9780511525247 (OCoLC)849796349 (DE-599)BVBBV043941728 |
dewey-full | 621.381/52 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.381/52 |
dewey-search | 621.381/52 |
dewey-sort | 3621.381 252 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
doi_str_mv | 10.1017/CBO9780511525247 |
format | Electronic eBook |
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id | DE-604.BV043941728 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T07:39:16Z |
institution | BVB |
isbn | 9780511525247 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029350698 |
oclc_num | 849796349 |
open_access_boolean | |
owner | DE-12 DE-92 |
owner_facet | DE-12 DE-92 |
physical | 1 online resource (xiv, 417 pages) |
psigel | ZDB-20-CBO ZDB-20-CBO BSB_PDA_CBO ZDB-20-CBO FHN_PDA_CBO |
publishDate | 1991 |
publishDateSearch | 1991 |
publishDateSort | 1991 |
publisher | Cambridge University Press |
record_format | marc |
series2 | Cambridge solid state science series |
spelling | Street, R. A. Verfasser aut Hydrogenated amorphous silicon R.A. Street Cambridge Cambridge University Press 1991 1 online resource (xiv, 417 pages) txt rdacontent c rdamedia cr rdacarrier Cambridge solid state science series Title from publisher's bibliographic system (viewed on 05 Oct 2015) 1. Introduction -- 2. Growth and structure of amorphous silicon -- 3. The electronic density of states -- 4. Defects and their electronic states -- 5. Substitutional doping -- 6. Defect reactions, thermal equilibrium and metastability -- 7. Electronic transport -- 8. Recombination of excess carriers -- 9. Contacts, interfaces and multilayers -- 10. Amorphous silicon device technology This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the applications of this technologically very important material. There is also an important chapter on contacts, interfaces and multilayers. The main emphasis of the book is on the new physical phenomena which result from the disorder of the atomic structure. The book will be of major importance to those who are researching or studying the properties and applications of a-Si:H. It will have a wider interest for anyone working in semiconductor physics and electronic engineering in general Silicon Amorphous semiconductors Surface chemistry Amorpher Zustand (DE-588)4306087-0 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Wasserstoff (DE-588)4064784-5 gnd rswk-swf Oberflächenchemie (DE-588)4126166-5 gnd rswk-swf Amorpher Halbleiter (DE-588)4001756-4 gnd rswk-swf Silicium (DE-588)4077445-4 s Amorpher Zustand (DE-588)4306087-0 s Oberflächenchemie (DE-588)4126166-5 s 1\p DE-604 Amorpher Halbleiter (DE-588)4001756-4 s Wasserstoff (DE-588)4064784-5 s 2\p DE-604 Erscheint auch als Druckausgabe 978-0-521-01934-7 Erscheint auch als Druckausgabe 978-0-521-37156-8 https://doi.org/10.1017/CBO9780511525247 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Street, R. A. Hydrogenated amorphous silicon 1. Introduction -- 2. Growth and structure of amorphous silicon -- 3. The electronic density of states -- 4. Defects and their electronic states -- 5. Substitutional doping -- 6. Defect reactions, thermal equilibrium and metastability -- 7. Electronic transport -- 8. Recombination of excess carriers -- 9. Contacts, interfaces and multilayers -- 10. Amorphous silicon device technology Silicon Amorphous semiconductors Surface chemistry Amorpher Zustand (DE-588)4306087-0 gnd Silicium (DE-588)4077445-4 gnd Wasserstoff (DE-588)4064784-5 gnd Oberflächenchemie (DE-588)4126166-5 gnd Amorpher Halbleiter (DE-588)4001756-4 gnd |
subject_GND | (DE-588)4306087-0 (DE-588)4077445-4 (DE-588)4064784-5 (DE-588)4126166-5 (DE-588)4001756-4 |
title | Hydrogenated amorphous silicon |
title_auth | Hydrogenated amorphous silicon |
title_exact_search | Hydrogenated amorphous silicon |
title_full | Hydrogenated amorphous silicon R.A. Street |
title_fullStr | Hydrogenated amorphous silicon R.A. Street |
title_full_unstemmed | Hydrogenated amorphous silicon R.A. Street |
title_short | Hydrogenated amorphous silicon |
title_sort | hydrogenated amorphous silicon |
topic | Silicon Amorphous semiconductors Surface chemistry Amorpher Zustand (DE-588)4306087-0 gnd Silicium (DE-588)4077445-4 gnd Wasserstoff (DE-588)4064784-5 gnd Oberflächenchemie (DE-588)4126166-5 gnd Amorpher Halbleiter (DE-588)4001756-4 gnd |
topic_facet | Silicon Amorphous semiconductors Surface chemistry Amorpher Zustand Silicium Wasserstoff Oberflächenchemie Amorpher Halbleiter |
url | https://doi.org/10.1017/CBO9780511525247 |
work_keys_str_mv | AT streetra hydrogenatedamorphoussilicon |