Crystal growth for beginners: fundamentals of nucleation, crystal growth, and epitaxy
Crystal - ambient phase equilibrium -- Nucleation -- Crystal growth -- Epitaxial growth
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New Jersey
World Scientific
[2017]
|
| Ausgabe: | 3rd edition |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Zusammenfassung: | Crystal - ambient phase equilibrium -- Nucleation -- Crystal growth -- Epitaxial growth "The processes of new phase formation and growth are of fundamental importance in numerous rapidly developing scientific fields such as modern materials science, micro- and optoelectronics, and environmental science. Crystal Growth for Beginners combines the depth of information in monographs, with the thorough analysis of review papers, and presents the resulting content at a level understandable by beginners in science. The book covers, in practice, all fundamental questions and aspects of nucleation, crystal growth, and epitaxy. This book is a non-eclectic presentation of this interdisciplinary topic in materials science. The third edition brings existing chapters up to date, and includes new chapters on the growth of nanowires by the vapor-liquid-solid mechanism, as well as illustrated short biographical texts about the scientists who introduced the basic ideas and concepts into the fields of nucleation, crystal growth and epitaxy. All formulae and equations are illustrated by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject. Crystal Growth for Beginners is a valuable reference for both graduate students and researchers in materials science. The reader is required to possess some basic knowledge of mathematics, physics and thermodynamics"-- |
| Beschreibung: | Includes bibliographical references and index |
| Beschreibung: | xxvii, 604 Seiten Illustrationen, Diagramme |
| ISBN: | 9789813143425 9813143428 |
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| 520 | 1 | |a Crystal - ambient phase equilibrium -- Nucleation -- Crystal growth -- Epitaxial growth | |
| 520 | 8 | |a "The processes of new phase formation and growth are of fundamental importance in numerous rapidly developing scientific fields such as modern materials science, micro- and optoelectronics, and environmental science. Crystal Growth for Beginners combines the depth of information in monographs, with the thorough analysis of review papers, and presents the resulting content at a level understandable by beginners in science. The book covers, in practice, all fundamental questions and aspects of nucleation, crystal growth, and epitaxy. This book is a non-eclectic presentation of this interdisciplinary topic in materials science. The third edition brings existing chapters up to date, and includes new chapters on the growth of nanowires by the vapor-liquid-solid mechanism, as well as illustrated short biographical texts about the scientists who introduced the basic ideas and concepts into the fields of nucleation, crystal growth and epitaxy. All formulae and equations are illustrated by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject. Crystal Growth for Beginners is a valuable reference for both graduate students and researchers in materials science. The reader is required to possess some basic knowledge of mathematics, physics and thermodynamics"-- | |
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Datensatz im Suchindex
| _version_ | 1804176818788368384 |
|---|---|
| adam_text | Titel: Crystal growth for beginners
Autor: Markov, Ivan V
Jahr: 2017
Contents Preface to the Third Edition vii Preface to the Second Edition xi Preface to the First Edition xv About the Author xix Chapter 1. Crystal-Ambient Phase Equilibrium 1 1.1 Equilibrium of Infinitely Large Phases........ 1 1.2 Supersaturation..................... 4 1.3 Equilibrium of Finite Phases ............. 8 1.3.1 Equation of Laplace.............. 9 1.3.2 Equation of Thomson-Gibbs......... 11 1.4 Equilibrium Shape of Crystals............. 14 1.4.1 Theorem of Gibbs-Curie-Wulff ....... 16 1.4.1.1 Crystal in a 3D medium...... 16 1.4.1.2 Crystal on a surface........20 Relation of Dupre........20 Equilibrium Shape........21 1.4.2 Polar diagram of the surface energy.....22 1.4.3 Herring’s formula............... 26 1.4.4 Stability of crystal surfaces.......... 33 1.5 Atomistic Views on Crystal Growth ......... 39 1.5.1 Equilibrium of infinitely large crystal with the ambient phase — the concept of half-crystal position ............ 39 XXI
XXXI Contents 1.5.2 Equilibrium finite crystal-ambient phase — the concept of mean separation work .... 43 1.5.3 Equilibrium 2D crystal-ambient phase ... 45 1.5.4 Equilibrium shape of crystals — atomistic approach.................... 46 1.5.5 Equilibrium vapor pressure of a 2D crystal on a foreign substrate.............48 1.6 Equilibrium Structure of Crystal Surfaces......49 1.6.1 Classification of crystal surfaces.......49 1.6.2 Equilibrium structure of a step........ 53 1.6.3 Equilibrium structure of F faces....... 58 1.6.3.1 Model of Jackson..........61 1.6.3.2 Model of Temkin..........64 1.6.3.3 Criterion of Fisher and Weeks ... 70 1.6.4 Kinetic roughness............... 75 Chapter 2. Nucléation 77 2.1 Thermodynamics.................... 77 2.1.1 Homogeneous formation of 3D nuclei .... 80 2.1.2 Heterogeneous formation of 3D nuclei .... 85 2.1.3 Heterogeneous formation of elastically strained 3D nuclei............... 92 2.1.4 Formation of 2D nuclei............ 98 2.1.5 Mode of nucléation on a foreign substrate . . 101 2.2 Rate of Nucléation ...................105 2.2.1 General formulation..............105 2.2.2 The equilibrium state.............108 2.2.3 Steady-state nucléation rate.........Ill 2.2.4 Nucléation of liquids from vapors......115 2.2.5 Statistical contributions............117 2.2.6 Nucléation from solutions and melts.....118 2.2.7 Rate of heterogeneous nucléation ......124 2.2.8 Rate of 2D nucléation .............126 2.2.8.1 Rate of 2D nucléation from vapors.............127
Contents xxiii 2.2.8.2 Rate of 2D nucléation from solutions............127 2.2.8.3 Rate of 2D nucléation in melts . . 128 2.2.9 Atomistic theory of nucléation ........129 2.2.9.1 The equilibrium state .......131 2.2.9.2 Steady-state nucléation rate .... 135 2.2.10 Nonsteady state nucléation ..........143 2.2.11 Mass crystallization and saturation nucleus density.....................154 2.2.12 Ostwald’s step rule..............173 Chapter 3. Crystal Growth 181 3.1 Normal Growth of Rough Crystal Faces.......182 3.2 Layer Growth of Flat Faces..............189 3.2.1 Rate of advance of steps ...........192 3.2.1.1 Growth from vapor phase.....193 Elementary Processes on Crystal Surfaces........193 Kinetic Coefficient of a Step . . 195 Rate of Advance of a Single Step...........197 Rate of Advance of a Train of Parallel Steps.........202 Rate of Advance of Curved Steps.........204 3.2.1.2 Growth from solutions.......207 Rate of Advance of a Single Step...........210 Rate of Advance of a Step in a Train of Steps.........211 3.2.1.3 Growth from melts.........214 3.2.2 Spiral growth of F faces............216 3.2.2.1 Shape of the growth spiral.....217 3.2.2.2 Growth from a vapor phase .... 223 The Back Stress Effect.....226
XXIV Contents 3.2.2.3 Growth in solutions.........229 3.2.2.4 Growth in melts ..........231 3.2.3 Growth by 2D nucléation ...........231 3.2.3.1 Constant rates of nucléation and step advance ............232 Layer-by-layer Growth .....232 Multilayer Growth........235 3.2.3.2 Time-dependent rates of nucléation and step advance.......241 Polynuclear Layer-by-layer Growth.............244 Multilayer growth — Simultaneous Growth of Two Monolayers ..........252 Simultaneous Growth of Arbitrary Number of Monolayers . 256 3.3 Some Particular Cases of Crystal Growth......262 3.3.1 Growth of nanowires by vapor-liquid-solid mechanism...................262 3.3.2 Growth of Si(001) vicinal surface — influence of surface anisotropy........276 3.3.2.1 Dimer’s structure..........279 3.3.2.2 Structure and energy of steps . . . 280 3.3.2.3 Ground state of vicinal Si(100) surfaces...............288 3.3.2.4 Anisotropy of surface diffusion coefficient..............291 3.3.2.5 Theory of ID nucléation ......293 3.3.2.6 Rate of step advance by ID nucléation ............300 3.3.2.7 Growth of Si(001) vicinal by step flow .................301 3.4 Ehrlich-Schwoebel Barrier and its Consequences . . 305 3.4.1 Ehrlich-Schwoebel effect on step-flow . . . .311 3.4.1.1 Bunching and debunching of steps 311 3.4.1.2 Bales-Zangwill instability.....314
Contents XXV 3.4.2 Ehrlich-Schwoebel effect on 2D nucléation . 317 3.4.2.1 Second-layer nucléation ......317 3.4.2.2 Step kinetics ............326 3.5 Kinematic Theory of Crystal Growth.........329 3.6 A Classical Experiment in Crystal Growth......341 Chapter 4. Epitaxial Growth 361 4.1 Basic Concepts and Definitions............361 4.2 Structure and Energy of Epitaxial Interfaces.....369 4.2.1 Boundary region................369 4.2.2 Models of epitaxial interfaces.........371 4.2.3 Misfit dislocations...............374 4.2.4 Frank-van der Merwe model of thin overlayer....................377 4.2.4.1 Interatomic potentials.......378 4.2.4.2 Interfacial interactions.......383 4.2.4.3 ID model of epitaxial interface . . 385 Description of the Model .... 385 Single Dislocations........391 Sequence of Dislocations .... 394 Strains..............395 Energy..............396 Energy of Interaction of MDs . . 399 Limit of Stability of the Pseudomorphous State .... 399 Equilibrium of Chain with Finite Length.........399 Limit of Metastability......401 4.2.4.4 2D model of Frank and van der Merwe ...........402 4.2.4.5 Comparison of 2D and ID models . 410 4.2.4.6 Application of ID model to thickening overlayer...........412 4.2.5 ID model with non-Hookean interatomic forces......................414 4.2.6 van der Merwe model of thick overgrowth . . 422
XXVI Contents 4.2.7 Thickening overgrowth............430 4.2.8 The volterra approach.............436 4.3 Mechanism of Growth of Epitaxial Films.......440 4.3.1 Classification of the growth modes......440 4.3.2 Experimental evidence............446 4.3.2.1 Metals on insulators........446 4.3.2.2 Metals on metals..........447 4.3.2.3 Metals on semiconductors.....449 4.3.2.4 Semiconductors on semiconductors 450 Effect of Surfactants.......452 4.3.3 General tendencies ..............454 4.3.4 Thermodynamics of epitaxy.........454 4.3.4.1 Wetting and clustering.......455 4.3.4.2 Relation of Dupre for misfitting crystals ...............459 4.3.4.3 Thickness variation of chemical potential...............462 4.3.4.4 Thermodynamic criterion of the growth mode............472 4.3.5 Kinetics of growth of thin epitaxial films . . 474 4.3.5.1 Mechanism of 2D-3D transformation ...........474 4.3.5.2 Kinetics of 2D-3D transformation . 479 4.3.5.3 Critical temperature for 2D-3D transition..............486 4.3.6 Surfactants in epitaxial growth........493 4.3.6.1 Thermodynamic considerations . . 494 Chemical Potential of a Bulk Crystal.............494 Chemical Potential of a Thin Film...........496 Thermodynamic Effect of Surfactants ..........497
Contents xxvii 4.3.6.2 Kinetics...............499 Effect of Surfactant on 2D Nucléation...........500 Attachment-Detachment Kinetics............506 Exchange-De-exchange Kinetics 510 Chapter 5. The Shoulders on Which We Stand 519 5.1 J. W. Gibbs.......................520 5.2 G. Wulff.........................526 5.3 M. Volrner........................528 5.4 Ya. I. Prenkel......................531 5.5 I. N. Stranski......................534 5.6 R. Kaischew.......................542 5.7 L. Krastanov......................548 5.8 F. C. Frank.......................552 5.9 N. Cabrera.......................557 5.10 Ya. B. Zeldovich....................562 5.11 J. H. van der Merwe..................568 Appendix A. Units, Conversion Factors and Constants 573 References 575 Index 599
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| author | Markov, Ivan V. 1941- |
| author_GND | (DE-588)139371222 |
| author_facet | Markov, Ivan V. 1941- |
| author_role | aut |
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| discipline | Physik Chemie |
| edition | 3rd edition |
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| id | DE-604.BV043908889 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T07:38:14Z |
| institution | BVB |
| isbn | 9789813143425 9813143428 |
| language | English |
| lccn | 2016026891 |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029317983 |
| oclc_num | 976018863 |
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| physical | xxvii, 604 Seiten Illustrationen, Diagramme |
| publishDate | 2017 |
| publishDateSearch | 2017 |
| publishDateSort | 2017 |
| publisher | World Scientific |
| record_format | marc |
| spelling | Markov, Ivan V. 1941- Verfasser (DE-588)139371222 aut Crystal growth for beginners fundamentals of nucleation, crystal growth, and epitaxy Ivan V Markov (Bulgarian Academy of Sciences, Bulgaria) 3rd edition New Jersey World Scientific [2017] xxvii, 604 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Includes bibliographical references and index Crystal - ambient phase equilibrium -- Nucleation -- Crystal growth -- Epitaxial growth "The processes of new phase formation and growth are of fundamental importance in numerous rapidly developing scientific fields such as modern materials science, micro- and optoelectronics, and environmental science. Crystal Growth for Beginners combines the depth of information in monographs, with the thorough analysis of review papers, and presents the resulting content at a level understandable by beginners in science. The book covers, in practice, all fundamental questions and aspects of nucleation, crystal growth, and epitaxy. This book is a non-eclectic presentation of this interdisciplinary topic in materials science. The third edition brings existing chapters up to date, and includes new chapters on the growth of nanowires by the vapor-liquid-solid mechanism, as well as illustrated short biographical texts about the scientists who introduced the basic ideas and concepts into the fields of nucleation, crystal growth and epitaxy. All formulae and equations are illustrated by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject. Crystal Growth for Beginners is a valuable reference for both graduate students and researchers in materials science. The reader is required to possess some basic knowledge of mathematics, physics and thermodynamics"-- Crystal growth Kristallwachstum (DE-588)4123579-4 gnd rswk-swf Kristallkeim (DE-588)4221888-3 gnd rswk-swf Epitaxie (DE-588)4152545-0 gnd rswk-swf Kristallzüchtung (DE-588)4140616-3 gnd rswk-swf Kristallisation (DE-588)4033215-9 gnd rswk-swf Kristallkeim (DE-588)4221888-3 s Kristallisation (DE-588)4033215-9 s Kristallwachstum (DE-588)4123579-4 s Epitaxie (DE-588)4152545-0 s 1\p DE-604 Kristallzüchtung (DE-588)4140616-3 s 2\p DE-604 HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029317983&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Markov, Ivan V. 1941- Crystal growth for beginners fundamentals of nucleation, crystal growth, and epitaxy Crystal growth Kristallwachstum (DE-588)4123579-4 gnd Kristallkeim (DE-588)4221888-3 gnd Epitaxie (DE-588)4152545-0 gnd Kristallzüchtung (DE-588)4140616-3 gnd Kristallisation (DE-588)4033215-9 gnd |
| subject_GND | (DE-588)4123579-4 (DE-588)4221888-3 (DE-588)4152545-0 (DE-588)4140616-3 (DE-588)4033215-9 |
| title | Crystal growth for beginners fundamentals of nucleation, crystal growth, and epitaxy |
| title_auth | Crystal growth for beginners fundamentals of nucleation, crystal growth, and epitaxy |
| title_exact_search | Crystal growth for beginners fundamentals of nucleation, crystal growth, and epitaxy |
| title_full | Crystal growth for beginners fundamentals of nucleation, crystal growth, and epitaxy Ivan V Markov (Bulgarian Academy of Sciences, Bulgaria) |
| title_fullStr | Crystal growth for beginners fundamentals of nucleation, crystal growth, and epitaxy Ivan V Markov (Bulgarian Academy of Sciences, Bulgaria) |
| title_full_unstemmed | Crystal growth for beginners fundamentals of nucleation, crystal growth, and epitaxy Ivan V Markov (Bulgarian Academy of Sciences, Bulgaria) |
| title_short | Crystal growth for beginners |
| title_sort | crystal growth for beginners fundamentals of nucleation crystal growth and epitaxy |
| title_sub | fundamentals of nucleation, crystal growth, and epitaxy |
| topic | Crystal growth Kristallwachstum (DE-588)4123579-4 gnd Kristallkeim (DE-588)4221888-3 gnd Epitaxie (DE-588)4152545-0 gnd Kristallzüchtung (DE-588)4140616-3 gnd Kristallisation (DE-588)4033215-9 gnd |
| topic_facet | Crystal growth Kristallwachstum Kristallkeim Epitaxie Kristallzüchtung Kristallisation |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029317983&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT markovivanv crystalgrowthforbeginnersfundamentalsofnucleationcrystalgrowthandepitaxy |