Future trends in microelectronics: journey into the unknown
Gespeichert in:
Weitere Verfasser: | , , |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Hoboken, New Jersey
Wiley
[2016]
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Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis Klappentext |
Beschreibung: | Includes bibliographical references and index |
Beschreibung: | xxiii, 356 pages Illustrationen |
ISBN: | 9781119069119 |
Internformat
MARC
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Datensatz im Suchindex
_version_ | 1804176798506811392 |
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adam_text | Contents
List of Contributors xiii
Preface xix
S. Luryi, J. M. Xu, and A. Zaslavsky
Acknowledgments xxiii
I FUTURE OF DIGITAL SILICON
1.1 Prospects of Future Si Technologies in the Data-Driven World 3
Kinam Kim and Gitae Jeong
1. Introduction 3
2. Memory ֊ DRAM 4
3. Memory - NAND 6
4. Logic technology 8
5. CMOS image sensors 11
6. Packaging technology 13
7. Silicon photonics technology 16
8. Concluding remarks 18
Acknowledgments 18
References 18
1.2 How Lithography Enables Moore’s Law 23
J P. H. Benschop
1. Introduction 23
2. Moore’s Law and the contribution of lithography 23
3. Lithography technology: past and present 24
4. Lithography technology: future 26
5. Summary 31
6. Conclusion 31
Acknowledgments 31
References 32
1.3 What Happened to Post-CMOS? 35
P M. Solomon
1. Introduction 35
2. General constraints on speed and energy 35
3. Guidelines for success 38
4. Benchmarking and examples 40
5. Discussion 46
v
47
47
47
51
51
54
57
59
61
62
63
69
69
70
76
77
78
78
83
83
84
87
90
90
90
93
93
93
96
98
6. Conclusion
Acknowledgments
References
Three-Dimensional Integration of Ge and Two-Dimensional
Materials for One-Dimensional Devices
M. Öst ling, E. Dentoni Litta, and P.-E. Hellström
1. Introduction
2. FEOL technology and materials for 3D integration
3. Integration of “more than Moore” functionality
4. Implications of 3D integration at the system level
5. Conclusion
Acknowledgments
References
Challenges to Ultralow-Power Semiconductor Device Operation
Francis Balestra
1. Introduction
2. Ultimate MOS transistors
3. Small slope switches
4. Conclusion
Acknowledgments
References
A Universal Nonvolatile Processing Environment
T. Windbacher, A. Makarov, V. Sverdlov, and S. Selberherr
1. Introduction
2. Universal nonvolatile processing environment
3. Bias-field-free spin-torque oscillator
4. Summary
Acknowledgments
References
Can MRAM (Finally) Be a Factor?
Jean-Pierre Noziéres
1. Introduction
2. What is MRAM?
3. Current limitations for stand-alone memories
4. Immediate opportunities: embedded memories
5. Conclusion
References
Contents vii
1.8 Nanomanufacturing for Electronics or Optoelectronics 103
M. J Kelly
1. Introduction 103
2. Nano-LEGO® 104
3. Tunnel devices 105
4. Split-gate transistors 106
5. Other nanoscale systems 108
6. Conclusion 108
Acknowledgments 109
References 109
II NEW MATERIALS AND NEW PHYSICS
2.1 Surface Waves Everywhere 113
M. I. Dyakonov
1. Introduction 113
2. Water waves 113
3. Surface acoustic waves 116
4. Surface plasma waves and polaritons 117
5. Plasma waves in two-dimensional structures 117
6. Electronic surface states in solids 119
7. Dyakonov surface waves (DSWs) 121
References 123
2.2 Graphene and Atom-Thick 2D Materials: Device Application
Prospects 127
Sungwoo Hwang, Jinseong Heo, Min-Hyun Lee; Kyung-Eun Byunf
Yeonchoo Cho, and Seongjun Park
1. Introduction 127
2. Conventional low-dimensional systems 127
3. New atomically thin material systems 129
4. Device application of new material systems 133
5. Components in Si technology 137
6. Graphene on Ge 142
7. Conclusion 142
References 142
2.3 Computing with Coupled Relaxation Oscillators 147
N. Shukla, S. Datta, A. Parihar, and A. Raychowdhury
1. Introduction 147
2. Vanadium dioxide-based relaxation oscillators 148
Contents
viii
3. Experimental demonstration of pairwise coupled HVFET
oscillators 150
4. Computing with pairwise coupled HVFET oscillators 150
5. Associative computing using pairwise coupled oscillators 153
6. Conclusion 155
References 156
2.4 On the Field-Induced Insulator-Metal Transition in V02 Films 157
Serge Luryi and Boris Spivak
1. Introduction 157
2. Electron concentration-induced transition 159
3. Field-induced transition in a film 161
4. Need for a ground plane 163
5. Conclusion 163
References 164
2.5 Group IV Alloys for Advanced Nano- and Optoelectronic
Applications 167
Detlev Grützmacher
1. Introduction 167
2. Epitaxial growth of GeSn layers by reactive gas source epitaxy 168
3. Optically pumped GeSn laser 172
4. Potential of GeSn alloys for electronic devices 175
5. Conclusion 178
Acknowledgments 178
References 178
2.6 High Sn-Content GeSn Light Emitters for Silicon Photonics 181
D. Stange, C. Schulte-Braucks, N. von den Driesch, S. Wirths,
G Mussler, S. Lenky T Stoicat S. Mantl, D. Grützmacher, D. Buca,
R Geiger; T Zabel, H. Sigg, J. M. Hartmann, and Z. Ikonic
1. Introduction 181
2. Experimental details of the GeSn material system 183
3. Direct bandgap GeSn light emitting diodes 185
4. Group IV GeSn microdisk laser on Si(100) 188
5. Conclusion and outlook 191
References 191
2.7 Gallium Nitride-Based Lateral and Vertical Nanowire Devices 195
Y-W Jo, D.-H. Son, K.-S. Im, andJ-H. Lee
1. Introduction 195
2. Crystallographic study of GaN nanowires using TMAH wet
etching 196
Contents ix
3. Q-shaped-gate lateral AlGaN/GaN FETs 199
4. Gate-all-around vertical GaN FETs 200
5. Conclusion 203
Ackn o wledgmen t s 204
References 204
2.8 Scribing Graphene Circuits 207
N. Rodriguez, R. J. Ruiz, C Marquez, and F Gamiz
1. Introduction 207
2. Graphene oxide from graphite 208
3. GO exfoliation 209
4. Selective reduction of graphene oxide 210
5. Raman spectroscopy 211
6. Electrical properties of graphene oxide and reduced graphene
oxide 212
7. Future perspectives 214
Acknowledgments 215
References 215
2.9 Structure and Electron Transport in Irradiated
Monolayer Graphene 217
L Shlimak, A. V Butenko, E. Zion, V. Richter; Yu. Kaganovskii,
L. Wolfson, A. Sharoni, A, Haran, D. Naveh, E. Kogan, and
M. Kaveh
1. Introduction 217
2. Samples 217
3. Raman scattering (RS) spectra 218
4. Sample resistance 220
5. Hopping magnetoresistance 225
References 229
2.10 Interplay of Coulomb Blockade and Luttinger-Liquid Physics
in Disordered ID InAs Nanowires with Strong Spin-Orbit
Coupling 233
R. Hevroni, V Shelukhin, M Karpovski, M Goldstein, E, Sela,
A. Palevski, and Hadas Shtrikman
1. Introduction 233
2. Sample preparation and the experimental setup 234
3. Experimental results 234
4. Conclusion 240
Acknowledgments 240
References 240
X
Contents
III MICROELECTRONICS IN HEALTH, ENERGY
HARVESTING, AND COMMUNICATIONS
3.1 Image-Guided Intervention and Therapy: The First Time Right 245
B. H W. Hendriks; D. Mioni, W Crooijmans, and H van Houten
1. Introduction 245
2. Societal challenge: Rapid rise of cardiovascular diseases 246
3. Societal challenge: Rapid rise of cancer 252
4. Drivers of change in healthcare 256
5. Conclusion 257
Acknowledgments 257
References 257
3.2 Rewiring the Nervous System, Without Wires 259
D. A. Borton
1. Introduction 259
2. Why go wireless? 260
3. One wireless recording solution used to explore primary
motor cortex control of locomotion 262
4. Writing into the nervous system with epidural electrical
stimulation of spinal circuits effectively modulates gait 265
5. Genetic technology brings a better model to neuroscience 267
6. The wireless bridge for closed-loop control and rehabilitation 268
7. Conclusion 269
Acknowledgments 270
References 270
3.3 Nanopower-Integrated Electronics for Energy Harvesting,
Conversion, and Management 275
A. Romani, M. Dini, M. Filippi, M. Tartagni, and E. Sangiorgi
L Introduction 275
2. Commercial ICs for micropower harvesting 276
3. State-of-the-art integrated nanocurrent power converters for
energy-harvesting applications 278
4. A multisource-integrated energy-harvesting circuit 281
5. Conclusion 286
Acknowledgments 286
References 286
3.4 Will Composite Nanomaterials Replace Piezoelectric Thin Films for
Energy Transduction Applications? 291
R Tao, G. Ardila, R Hinchet, A. Michard, L. Montés, and M. Mouis
1. Introduction 291
Contents xi
2. Thin film piezoelectric materials and applications 292
3. Individual ZnO and GaN piezoelectric nanowires:
experiments and simulations 293
4. Piezoelectric composite materials using nanowires 295
5. Conclusion 303
Acknowledgments 304
References 304
3.5 New Generation of Vertical-Cavity Surface-Emitting Lasers for
Optical Interconnects 309
N. Ledentsov Jr, V. A. Shchukin, N N. Ledentsov, J.֊R. Kropp,
S. Burger, and F. Schmidt
1. Introduction 309
2. VCSEL requirements 310
3. Optical leakage 312
4. Experiment 313
5. Simulation 316
6. Conclusion 323
Acknowledgments 323
References 323
3.6 Reconfigurable Infrared Photodetector Based on Asymmetrically
Doped Double Quantum Wells for Multicolor and Remote
Temperature Sensing 327
X. Zhang, V. Mitin, G. Thomain, T. Yore, Y. Li, J. K. Choi,
K. Sablon, and A. Sergeev
1. Introduction 327
2. Fabrication of DQWIP with asymmetrical doping 328
3. Optoelectronic characterization of DQWIPs 329
4. Temperature sensing 333
5. Conclusion 334
Ackno wledgmen t s 335
References 335
3.7 Tunable Photonic Molecules for Spectral Engineering in Dense
Photonic Integration 337
M. C. M. M. Souza, G. F. M. Rezende, A. A. G. von Zuben,
G. S. Wiederhecker, N. C. Frateschi, and L. A. M. Barea
1. Introduction 337
2. Photonic molecules and their spectral features 338
3. Coupling-controlled mode-splitting: GHz-operation on a
tight footprint 340
4. Reconfigurable spectral control 341
Contents
xii
5. Toward reconfigurable mode-splitting control 343
6. Conclusion 346
Acknowledgments 346
References 347
INDEX
349
Presents the developments in microelectrönics-related
fields, with comprehensive insight from a number of
leading industry professionals
The book presents the future developments and innovations in the developing field
of microelectronics. The book s chapters contain contributions from various authors,
all of whom are leading industry professionals affiliated with top universities, major
semiconductor companies, or government laboratories, discussing the evolution
of their profession. A wide range of microelectronics-related fields is examined,
including solid-state electronics, material science, optoelectronics, bioelectronics,
and renewable energies. The topics covered range from fundamental physical
principles, materials and device technologies, and major new market opportunities.
• Describes the expansion of the field into hot topics such as energy (photovoltaics)
and medicine (bio-nanotechnology)
• Provides contributions from leading industry professionals in semiconductor
micro- and nanoelectronics
• Discusses the importance of micro- and nanoelectronics in today s rapidly
changing and expanding information society
Future Trends in Microelectronics: Journey into the Unknown is written for industry
professionals and graduate students in engineering, physics, and nanotechnology.
Serge Luryi, PhD, is Distinguished Professor and Chair of Electrical and Computer
Engineering at Stony Brook University, as well as the Director of New York State Center
for Advanced Technology in Sensor Systems. He has worked in microelectronics for
over 30 years, published over 250 papers and has been awarded 53 US patents. He is a
Fellow of the IEEE, the American Physical Society, and the Optical Society of America.
Jimmy Xu, PhD, is the Charles C. Tillinghast Jr. 32 University Professor of
Engineering and Physics at Brown University. Prior to 1999, he was the James
Ham Chair of Optoelectronics, as well as the Director of the Nortel Institute for
Telecommunications at the University of Toronto. He has worked in microelectronics
for over 30 years. He is a Fellow of the AAAS, APS, Guggenheim Foundation, IEEE,
and the Institute of Physics.
Alex Zaslavsky, PhD, is Professor of Engineering and Physics at Brown University.
During 2009-2012 he was a Visiting Senior Chair of Excellence at the Nanosciences
Foundation in Grenoble, France. He has worked in microelectronics for over 25 years
and has published over 130 journal papers and book chapters. He has been an editor
of the Solid-State Electronics international journal since 2003.
|
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era_facet | Prognose |
format | Book |
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genre | 1\p (DE-588)1071861417 Konferenzschrift 2006 Kreta gnd-content 2\p (DE-588)1071861417 Konferenzschrift gnd-content 3\p (DE-588)4143413-4 Aufsatzsammlung gnd-content |
genre_facet | Konferenzschrift 2006 Kreta Konferenzschrift Aufsatzsammlung |
id | DE-604.BV043897295 |
illustrated | Illustrated |
indexdate | 2024-07-10T07:37:54Z |
institution | BVB |
isbn | 9781119069119 |
language | English |
lccn | 016022488 |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029306641 |
oclc_num | 992456992 |
open_access_boolean | |
owner | DE-703 DE-1043 |
owner_facet | DE-703 DE-1043 |
physical | xxiii, 356 pages Illustrationen |
publishDate | 2016 |
publishDateSearch | 2016 |
publishDateSort | 2016 |
publisher | Wiley |
record_format | marc |
spelling | Future trends in microelectronics journey into the unknown edited by Serge Luryi, Jimmy Xu, Alexander Zaslavsky Hoboken, New Jersey Wiley [2016] xxiii, 356 pages Illustrationen txt rdacontent n rdamedia nc rdacarrier Includes bibliographical references and index Prognose gnd rswk-swf Microelectronics Technological innovations Nanotechnology Technological innovations Semiconductors Technological innovations Mikroelektronik (DE-588)4039207-7 gnd rswk-swf 1\p (DE-588)1071861417 Konferenzschrift 2006 Kreta gnd-content 2\p (DE-588)1071861417 Konferenzschrift gnd-content 3\p (DE-588)4143413-4 Aufsatzsammlung gnd-content Mikroelektronik (DE-588)4039207-7 s Prognose z 4\p DE-604 Luryi, Serge edt Xu, Jimmy M. (DE-588)173034322 edt Zaslavsky, Alex edt Erscheint auch als Online-Ausgabe, pdf 978-1-119-06917-1 Erscheint auch als Online-Ausgabe, epub 978-1-119-06918-8 Digitalisierung UB Bayreuth - ADAM Catalogue Enrichment application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029306641&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis Digitalisierung UB Bayreuth - ADAM Catalogue Enrichment application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029306641&sequence=000004&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA Klappentext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Future trends in microelectronics journey into the unknown Microelectronics Technological innovations Nanotechnology Technological innovations Semiconductors Technological innovations Mikroelektronik (DE-588)4039207-7 gnd |
subject_GND | (DE-588)4039207-7 (DE-588)1071861417 (DE-588)4143413-4 |
title | Future trends in microelectronics journey into the unknown |
title_auth | Future trends in microelectronics journey into the unknown |
title_exact_search | Future trends in microelectronics journey into the unknown |
title_full | Future trends in microelectronics journey into the unknown edited by Serge Luryi, Jimmy Xu, Alexander Zaslavsky |
title_fullStr | Future trends in microelectronics journey into the unknown edited by Serge Luryi, Jimmy Xu, Alexander Zaslavsky |
title_full_unstemmed | Future trends in microelectronics journey into the unknown edited by Serge Luryi, Jimmy Xu, Alexander Zaslavsky |
title_short | Future trends in microelectronics |
title_sort | future trends in microelectronics journey into the unknown |
title_sub | journey into the unknown |
topic | Microelectronics Technological innovations Nanotechnology Technological innovations Semiconductors Technological innovations Mikroelektronik (DE-588)4039207-7 gnd |
topic_facet | Microelectronics Technological innovations Nanotechnology Technological innovations Semiconductors Technological innovations Mikroelektronik Konferenzschrift 2006 Kreta Konferenzschrift Aufsatzsammlung |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029306641&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029306641&sequence=000004&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA |
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