Verfügbarkeit: Signal generation for millimeter wave and THz applications in InP-DHBT and InP-on-BiCMOS technologies

Signal generation for millimeter wave and THz applications in InP-DHBT and InP-on-BiCMOS technologies:

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Bibliographische Detailangaben
1. Verfasser:	Hossain, Muhammad Maruf 1979- (VerfasserIn)
Format:	Abschlussarbeit Buch
Sprache:	English
Veröffentlicht:	Berlin 2016
Schlagworte:	Hochschulschrift
Online-Zugang:	kostenfrei Inhaltsverzeichnis
Beschreibung:	vii, 114 Seiten Illustrationen, Diagramme
DOI:	10.14279/depositonce-5450

Internformat

MARC


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Datensatz im Suchindex

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adam_text	ACKNOWLEDGEMENT ABSTRACT CONTENTS 1 INTRODUCTION 1 1.1 MOTIVATION.............................................................................................................................1 1.2 THESIS OBJECTIVES.................................................................................................................2 1.3 THESIS ORGANIZATION............................................................................................................ 3 2 TECHNOLOGY 4 2.1 TRANSFERRED SUBSTRATE (TS) PROCESS FLOW .......................................................................... 7 2.2 INP-ON-BICMOS PROCESS FLOW........................................................................................... 8 3 DEVICE MODELLING AND MEASUREMENT SETUP 11 3.1 PASSIVES...............................................................................................................................11 3.1.1 TRANSMISSION LINE THEORY................................................................................... 11 3.1.1.1 INVESTIGATION O F DIFFERENT TRANSMISSION LINES ................................... 13 3.1.2 RESISTORS................................................................................................................14 3.1.3 CAPACITORS............................................................................................................. 15 3.1.4 GROUND VIA........................................................................................................... 16 3.1.5 TRANSITION BETWEEN INP AND BICMOS ............................................................... 16 3.1.6 DC AND HIGH FREQUENCY RF PADS........................................................................17 3.1.7 POST LAYOUT ANALYSIS........................................................................................... 18 3.2 ACTIVE ELEMENTS................................................................................................................ 19 3.2.1 SMALL SIGNAL AND LARGE SIGNAL............................................................................19 3.3 MEASUREMENTS.............................................................................................. 20 3.3.1 S-PARAMETER.......................................................................................................... 21 3.3.2 SPECTRUM...............................................................................................................21 3.3.3 POWER....................................................................................................................22 3.3.4 OSCILLATOR MEASUREMENT METHODOLOGY................................................................ 23 3.3.5 MULTIPLIER MEASUREMENT METHODOLOGY...............................................................23 4 MILLIMETER WAVE AND SUB-THZ FREQUENCY OSCILLATORS 24 4.1 OSCILLATOR CIRCUIT TOPOLOGY............................................................................................ 24 4.1.1 PHASE NOISE.......................................................................................................... 25 4.1.2 PUSH-PUSH TOPOLOGY............................................................................................ 26 4.2 OSCILLATORS ON TRANSFERRED SUBSTRATE (TS) PROCESS..........................................................27 4.2.1 DESIGN AND CHARACTERIZATION ..............................................................................27 4.2.1.1 96 GHZ FUNDAMENTAL OSCILLATOR ........................................................... 27 4.2.1.2 200 GHZ FUNDAMENTAL OSCILLATOR .......................................................... 32 4.2.1.3 290 GHZ HARMONIC OSCILLATOR ............................................................... 35 4.3 OSCILLATORS ON INP-ON-BICMOS PROCESS ..................................................................... 39 4.3.1 DESIGN AND CHARACTERIZATION............................................................................. 40 4.3.1.1 PUSH-PUSH OSCILLATOR DESIGN.................................................................. 40 4.3.1.2 162 GHZ PUSH-PUSH OSCILLATOR..............................................................41 4.3.1.3 270 GHZ PUSH-PUSH OSCILLATOR .............................................................. 43 5 SUB-THZ AND THZ ACTIVE FREQUENCY MULTIPLIERS 46 5.1 DESIGN PRINCIPLE AND TOPOLOGY........................................................................................46 5.1.1 PURPOSE O F ACTIVE FREQUENCY MULTIPLIERS .......................................................... 46 5.1.2 SINGLE DEVICE FREQUENCY MULTIPLIER................................................................... 47 5.1.3 BALANCED FREQUENCY MULTIPLIER .......................................................................... 49 5.2 DESIGN AND CHARACTERIZATION............................................................................................. 51 5.2.1 W-BAND MARCHAND BAIUN.....................................................................................51 5.2.2 140-220 GHZ FREQUENCY DOUBLER ...................................................................... 54 5.2.3 BAND PASS FILTER BEYOND 200 GHZ.....................................................................60 5.2.4 250 GHZ FREQUENCY TRIPLER.................................................................................63 5.2.5 330 GHZ FREQUENCY QUADRUPLER ........................................................................ 66 6 HETERO-LNTEGRATED SOURCES 71 6.1 BICMOS-TO-INP TRANSITION.............................................................................................. 71 6.2 DESIGN AND CHARACTERIZATION............................................................................................. 73 6.2.1 250 GHZ HETERO-LNTEGRATED SOURCE .................................................................. 73 6.2.2 330 GHZ HETERO-LNTEGRATED SOURCE .................................................................... 84 7 CONCLUSIONS 88 APPENDIX REFERENCES PUBLICATIONS
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spelling	Hossain, Muhammad Maruf 1979- Verfasser (DE-588)1122601298 aut Signal generation for millimeter wave and THz applications in InP-DHBT and InP-on-BiCMOS technologies vorgelegt von M.Sc.Eng Muhammad Maruf Hossain aus Rajshahi, Bangladesh Berlin 2016 vii, 114 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Dissertation Technische Universität Berlin 2016 (DE-588)4113937-9 Hochschulschrift gnd-content Erscheint auch als Online-Ausgabe 10.14279/depositonce-5450 BV045074643 https://doi.org/10.14279/depositonce-5450 Resolving-System kostenfrei Volltext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029278357&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Hossain, Muhammad Maruf 1979- Signal generation for millimeter wave and THz applications in InP-DHBT and InP-on-BiCMOS technologies
subject_GND	(DE-588)4113937-9
title	Signal generation for millimeter wave and THz applications in InP-DHBT and InP-on-BiCMOS technologies
title_auth	Signal generation for millimeter wave and THz applications in InP-DHBT and InP-on-BiCMOS technologies
title_exact_search	Signal generation for millimeter wave and THz applications in InP-DHBT and InP-on-BiCMOS technologies
title_full	Signal generation for millimeter wave and THz applications in InP-DHBT and InP-on-BiCMOS technologies vorgelegt von M.Sc.Eng Muhammad Maruf Hossain aus Rajshahi, Bangladesh
title_fullStr	Signal generation for millimeter wave and THz applications in InP-DHBT and InP-on-BiCMOS technologies vorgelegt von M.Sc.Eng Muhammad Maruf Hossain aus Rajshahi, Bangladesh
title_full_unstemmed	Signal generation for millimeter wave and THz applications in InP-DHBT and InP-on-BiCMOS technologies vorgelegt von M.Sc.Eng Muhammad Maruf Hossain aus Rajshahi, Bangladesh
title_short	Signal generation for millimeter wave and THz applications in InP-DHBT and InP-on-BiCMOS technologies
title_sort	signal generation for millimeter wave and thz applications in inp dhbt and inp on bicmos technologies
topic_facet	Hochschulschrift
url	https://doi.org/10.14279/depositonce-5450 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029278357&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
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