Ferroelectric-gate field effect transistor memories: device physics and applications
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Bibliographic Details
Other Authors: Park, Byung-Eun (Editor), Ishiwara, Hiroshi 1945- (Editor), Okuyama, Masanori (Editor), Sakai, Shigeki (Editor), Yoon, Sung-Min (Editor)
Format: Book
Language:English
Published: Dordrecht Springer [2016]
Series:Topics in applied physics 131
Subjects:
Physical Description:xviii, 347 Seiten Illustrationen, Diagramme
ISBN:9789402408393

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