Ferroelectric-gate field effect transistor memories: device physics and applications
Gespeichert in:
| Weitere Verfasser: | , , , , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Dordrecht
Springer
[2016]
|
| Schriftenreihe: | Topics in applied physics
131 |
| Schlagworte: | |
| Beschreibung: | xviii, 347 Seiten Illustrationen, Diagramme |
| ISBN: | 9789402408393 |
Internformat
MARC
| LEADER | 00000nam a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV043833532 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | t | ||
| 008 | 161019s2016 a||| |||| 00||| eng d | ||
| 020 | |a 9789402408393 |9 978-94-024-0839-3 | ||
| 035 | |a (OCoLC)960038026 | ||
| 035 | |a (DE-599)BVBBV043833532 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-83 | ||
| 082 | 0 | |a 621.3815 |2 23 | |
| 245 | 1 | 0 | |a Ferroelectric-gate field effect transistor memories |b device physics and applications |c Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors |
| 264 | 1 | |a Dordrecht |b Springer |c [2016] | |
| 264 | 4 | |c © 2016 | |
| 300 | |a xviii, 347 Seiten |b Illustrationen, Diagramme | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Topics in applied physics |v 131 | |
| 650 | 4 | |a Physics | |
| 650 | 4 | |a Surfaces (Physics) | |
| 650 | 4 | |a Interfaces (Physical sciences) | |
| 650 | 4 | |a Thin films | |
| 650 | 4 | |a Electronic circuits | |
| 650 | 4 | |a Electronics | |
| 650 | 4 | |a Microelectronics | |
| 650 | 4 | |a Materials / Surfaces | |
| 650 | 4 | |a Electronic Circuits and Devices | |
| 650 | 4 | |a Electronics and Microelectronics, Instrumentation | |
| 650 | 4 | |a Surfaces and Interfaces, Thin Films | |
| 650 | 4 | |a Circuits and Systems | |
| 650 | 4 | |a Surface and Interface Science, Thin Films | |
| 700 | 1 | |a Park, Byung-Eun |4 edt | |
| 700 | 1 | |a Ishiwara, Hiroshi |d 1945- |0 (DE-588)12899889X |4 edt | |
| 700 | 1 | |a Okuyama, Masanori |4 edt | |
| 700 | 1 | |a Sakai, Shigeki |4 edt | |
| 700 | 1 | |a Yoon, Sung-Min |4 edt | |
| 776 | 0 | 8 | |i Erscheint auch als |n Online-Ausgabe |z 978-94-024-0841-6 |
| 830 | 0 | |a Topics in applied physics |v 131 |w (DE-604)BV008007504 |9 131 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-029244281 | ||
Datensatz im Suchindex
| _version_ | 1804176698396114944 |
|---|---|
| any_adam_object | |
| author2 | Park, Byung-Eun Ishiwara, Hiroshi 1945- Okuyama, Masanori Sakai, Shigeki Yoon, Sung-Min |
| author2_role | edt edt edt edt edt |
| author2_variant | b e p bep h i hi m o mo s s ss s m y smy |
| author_GND | (DE-588)12899889X |
| author_facet | Park, Byung-Eun Ishiwara, Hiroshi 1945- Okuyama, Masanori Sakai, Shigeki Yoon, Sung-Min |
| building | Verbundindex |
| bvnumber | BV043833532 |
| ctrlnum | (OCoLC)960038026 (DE-599)BVBBV043833532 |
| dewey-full | 621.3815 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815 |
| dewey-search | 621.3815 |
| dewey-sort | 3621.3815 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01787nam a2200517zcb4500</leader><controlfield tag="001">BV043833532</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">161019s2016 a||| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789402408393</subfield><subfield code="9">978-94-024-0839-3</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)960038026</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV043833532</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815</subfield><subfield code="2">23</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ferroelectric-gate field effect transistor memories</subfield><subfield code="b">device physics and applications</subfield><subfield code="c">Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Dordrecht</subfield><subfield code="b">Springer</subfield><subfield code="c">[2016]</subfield></datafield><datafield tag="264" ind1=" " ind2="4"><subfield code="c">© 2016</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">xviii, 347 Seiten</subfield><subfield code="b">Illustrationen, Diagramme</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Topics in applied physics</subfield><subfield code="v">131</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surfaces (Physics)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Interfaces (Physical sciences)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thin films</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronic circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Microelectronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Materials / Surfaces</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronic Circuits and Devices</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics and Microelectronics, Instrumentation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surfaces and Interfaces, Thin Films</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Circuits and Systems</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surface and Interface Science, Thin Films</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Park, Byung-Eun</subfield><subfield code="4">edt</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ishiwara, Hiroshi</subfield><subfield code="d">1945-</subfield><subfield code="0">(DE-588)12899889X</subfield><subfield code="4">edt</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Okuyama, Masanori</subfield><subfield code="4">edt</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sakai, Shigeki</subfield><subfield code="4">edt</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yoon, Sung-Min</subfield><subfield code="4">edt</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Online-Ausgabe</subfield><subfield code="z">978-94-024-0841-6</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Topics in applied physics</subfield><subfield code="v">131</subfield><subfield code="w">(DE-604)BV008007504</subfield><subfield code="9">131</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-029244281</subfield></datafield></record></collection> |
| id | DE-604.BV043833532 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T07:36:19Z |
| institution | BVB |
| isbn | 9789402408393 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029244281 |
| oclc_num | 960038026 |
| open_access_boolean | |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | xviii, 347 Seiten Illustrationen, Diagramme |
| publishDate | 2016 |
| publishDateSearch | 2016 |
| publishDateSort | 2016 |
| publisher | Springer |
| record_format | marc |
| series | Topics in applied physics |
| series2 | Topics in applied physics |
| spelling | Ferroelectric-gate field effect transistor memories device physics and applications Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors Dordrecht Springer [2016] © 2016 xviii, 347 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Topics in applied physics 131 Physics Surfaces (Physics) Interfaces (Physical sciences) Thin films Electronic circuits Electronics Microelectronics Materials / Surfaces Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films Park, Byung-Eun edt Ishiwara, Hiroshi 1945- (DE-588)12899889X edt Okuyama, Masanori edt Sakai, Shigeki edt Yoon, Sung-Min edt Erscheint auch als Online-Ausgabe 978-94-024-0841-6 Topics in applied physics 131 (DE-604)BV008007504 131 |
| spellingShingle | Ferroelectric-gate field effect transistor memories device physics and applications Topics in applied physics Physics Surfaces (Physics) Interfaces (Physical sciences) Thin films Electronic circuits Electronics Microelectronics Materials / Surfaces Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films |
| title | Ferroelectric-gate field effect transistor memories device physics and applications |
| title_auth | Ferroelectric-gate field effect transistor memories device physics and applications |
| title_exact_search | Ferroelectric-gate field effect transistor memories device physics and applications |
| title_full | Ferroelectric-gate field effect transistor memories device physics and applications Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors |
| title_fullStr | Ferroelectric-gate field effect transistor memories device physics and applications Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors |
| title_full_unstemmed | Ferroelectric-gate field effect transistor memories device physics and applications Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors |
| title_short | Ferroelectric-gate field effect transistor memories |
| title_sort | ferroelectric gate field effect transistor memories device physics and applications |
| title_sub | device physics and applications |
| topic | Physics Surfaces (Physics) Interfaces (Physical sciences) Thin films Electronic circuits Electronics Microelectronics Materials / Surfaces Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films |
| topic_facet | Physics Surfaces (Physics) Interfaces (Physical sciences) Thin films Electronic circuits Electronics Microelectronics Materials / Surfaces Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films |
| volume_link | (DE-604)BV008007504 |
| work_keys_str_mv | AT parkbyungeun ferroelectricgatefieldeffecttransistormemoriesdevicephysicsandapplications AT ishiwarahiroshi ferroelectricgatefieldeffecttransistormemoriesdevicephysicsandapplications AT okuyamamasanori ferroelectricgatefieldeffecttransistormemoriesdevicephysicsandapplications AT sakaishigeki ferroelectricgatefieldeffecttransistormemoriesdevicephysicsandapplications AT yoonsungmin ferroelectricgatefieldeffecttransistormemoriesdevicephysicsandapplications |