APA (7th ed.) Citation

Park, B., Ishiwara, H., Okuyama, M., Sakai, S., & Yoon, S. (2016). Ferroelectric-gate field effect transistor memories: Device physics and applications. Springer.

Chicago Style (17th ed.) Citation

Park, Byung-Eun, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, and Sung-Min Yoon. Ferroelectric-gate Field Effect Transistor Memories: Device Physics and Applications. Dordrecht: Springer, 2016.

MLA (9th ed.) Citation

Park, Byung-Eun, et al. Ferroelectric-gate Field Effect Transistor Memories: Device Physics and Applications. Springer, 2016.

Warning: These citations may not always be 100% accurate.