Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
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Bibliographic Details
Other Authors: Park, Byung-Eun (Editor), Ishiwara, Hiroshi 1945- (Editor), Okuyama, Masanori (Editor), Sakai, Shigeki (Editor), Yoon, Sung-Min (Editor)
Format: Electronic eBook
Language:English
Published: Dordrecht Springer [2016]
Series:Topics in Applied Physics volume 131
Subjects:
Online Access:TUM01
UBT01
Volltext
Physical Description:1 Online-Ressource (XVIII, 347 p. 254 illus., 150 illus. in color)
ISBN:9789402408416
DOI:10.1007/978-94-024-0841-6

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